(3.238.130.97) 您好!臺灣時間:2021/05/09 03:00
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果

詳目顯示:::

我願授權國圖
: 
twitterline
研究生:江明澤
研究生(外文):Ming-Che.Chiang
論文名稱:雷射熱退火熱傳模擬之開發
論文名稱(外文):Development of Heat Transfer Simulation for Laser Annealing
指導教授:張睿達
指導教授(外文):R.D.Chang
學位類別:碩士
校院名稱:長庚大學
系所名稱:電子工程學研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2008
畢業學年度:96
論文頁數:48
中文關鍵詞:熱退火雷射非平面結構熱傳
外文關鍵詞:annealinglasernon-planarheat transfer
相關次數:
  • 被引用被引用:0
  • 點閱點閱:108
  • 評分評分:系統版面圖檔系統版面圖檔系統版面圖檔系統版面圖檔系統版面圖檔
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0
雷射加工已廣泛應用於薄膜電晶體製程上面,其中以脈衝雷射和連續波最為廣泛,而其雷射熱傳非常重要,因此我們將開發出平面和非平面結構來模擬其熱傳情況. 我們將透過脈衝式雷射熱傳模擬來應用於複晶矽材料的熱傳情形和製程上氮化鎵經由雷射脫離的條件,在連續波雷射方面,透過熱傳模擬的方式來得到改善晶粒大小的雷射條件. 最後再開發出非平面結構的雷射熱傳模擬模擬平台來應用於複雜的半導體製程和元件結構.
Laser annealing process has been used for thin film transistor (TFT) technology. Simulation of laser annealing was developed to simulate temperature profile in planar and non-planar structures. For planar structures, temperature profile with excimer laser and continuous wave laser(CW laser) were simulated. The simulation of excimer laser was used to examine the lift-off process of GaN. Annealing using CW laser was simulated to identify the process condition for improving grain size. For non-planar structures, two dimensional temperature profile with excimer laser was be simulated. The developed simulation platform for laser annealing is implemented in semiconductor process simulators. Therefore, the laser simulation can be performed with complex semiconductor processes and device structures.
Table of Contents
指導教授推薦書
口試委員會審定書
授權書
誌謝 iii
Fig.List iv
Table List viii
中文摘要 x
Abstract xi

CHAPTER 1 Introduction 1

CHAPTER 2 Simulation of Laser Annealing 4

CHAPTER3 Laser Annealing Simulation of planer structure 12


CHAPTER 4 Laser Annealing Simulation of non-planer structure 23


CHAPTER 5 Conclusion 33

REFERENCES 34

APPENDIX 35





32
[1] S.D. Brotherton et al.“Influence of Melt Depth in Laser Crystallized
Poly-Si Thin Film Transistors.”, J. Appl. Phys., Vol.82, pp.4086, 1997.
[2] M. Miyasaka, T. Nakazawa, I. Yudasaka, and H. Ohshima,” TFT and Physical Properties of Poly-Crystalline Silicon Prepared by Very Low Pressure Chemical Vapour Deposition (VLPCVD).” Jpn. J. Appl. Phys., Part 1 30, pp.3733, 1991.
[3] Tsung-Kuna A, Chou and Jerzy Kanicki, “Two-Dimensional Numerical Simulation of Solid-Phase-Crystallized Polysilicon Thin-Film Transistor Characteristics.”, Jpn. J. Appl. Phys. Vol. 38, pp. 2251-2255, 1999.
[4] S. D. Brother, D. J. McCulloch, J. B. Clegg, and J. P. Gowers, “Excimer-Laser-Annealed Poly-Si Thin-Film Transistors.”, IEEE Transactions on Electron Devices Vol. 40, No. 2, pp. 407-413, 1993.
[5] K. Winer, G. B. Anderson, S. E. Ready R. Z. Bachrach, R. I. Johnson, F. A. Ponce, “Excimer-laser-induced crystallization of hydrogenate amorphous silicon.”, Appl. Phys. Lett., Vol. 57 (21), pp. 2222-2224, November 1990.
[6] Hiroyuki Kuriyama, et al., “Enlargement of Poly-Si Film Grain Size by Excimer Laser Annealing and Its Application to High-performance Poly-Si Thin Film Transistor.”, Jpn. J. Appl. Phys. Vol. 30, pp. 3700-3703, 1991.
[7] William S. Wong, et al. ”The integration of GaN thin films with dissimilar substrate materials by wafer bonding and laser lift-off.”, Compound Semiconductor, Vol. 5(9), 54 ,1999.
[8] Hara, A. et al., “High Performance Poly-Si TFTs on a Glass by a Stable Scanning CW Laser Lateral Crystallization.”, IEDM Tech. Digest, pp. 747-750, 2001.
[9] Mark H. Clark,” Laser Thermal Processing of Novel Doping Schemes In Silicon.”, University of Florida, 2004.
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top
系統版面圖檔 系統版面圖檔