臺灣博碩士論文加值系統

本論文中所探討的850nm面射型雷射(vertical cavity surface emitting laser,VCSEL),是由上下布拉格反射鏡(Distributed Bragg Reflector)所組成的共振腔與量子井所組成，經由垂直共振腔的方式產生垂直晶片表面向上出光的雷射光。與邊射型雷射相較下，此種雷射具有圓形對稱的發光圖形、光束發散角較小，良好的溫度特性與極低的臨界電流，而且製作方式與量測方式較簡易，並可製作成二維矩陣，這些特性使其非常適合用於光纖通訊及一些消費性產品上。本論文探討利用不同的製程方式，比較其製程難易與穩定度，並研究不同製程下的元件特性如:電性表現，溫度特性與發光模態分析。本論文所探討的製程方式有:(1)水氣氧化法﹔(2)表面淺層蝕刻加水氣氧化法﹔(3)水氣氧法化加離子佈植三種製程方式。本論文的實驗結果以第三種方式:水氣氧化法加離子佈植可得到較佳的元件特性，溫度表現為從室溫增加至90℃，操作電流增加不到1 mA，而且在光模態特性可得到19dB的主/側模比。

The 850nm vertical cavity surface emitting laser (VCSEL) was investigated in this thesis. It is consisted of top and bottom DBR (Distributed Bragg Reflector) and multi-quantum wells (MQWs) micro-resonant-cavity. The output light is emitting from the lower DBR by the resonance effect in the micro-cavity. Comparison with edge emitting laser (ELD), VCSEL have the performances of circle and symmetrical lightǵlow divergent angle good temperature characteristics!ǵlow threshold currenu easy process!ǵ measurement and application on 2D array. These good performances make VCSEL very suitable for optical-fiber communications and some consumptive electronic products. In this thesis, different processes were employed to investigate the VCSEL characteristics. By comparison, different processes make different characteristics.The device L-I-V characteristidǵtemperature characteristics and the analysis of light mode were investigated. Three different processes were employed to investigate the VCSEL characteristic: (1) Vapor oxidation (2) Surface relief mixed Vapor oxidation (3) Vapor oxidation mixed Ion implantation. The experimental results show the vapor oxidation mixed ion implantation process obtained good device performances. The temperature characteristics is the increasing of operation current is lower than 1 mA when the device was burn-in at 90ʚ, and a light main mode with side mode suppression(SMSR) ratio of 19 dB was obtained.

中文摘要………………………………………………………………………………… i
英文摘要………………………………………………………………………………… ii
誌謝……………………………………………………………………………………… iii
目錄……………………………………………………………………………………… iv
表目錄…………………………………………………………………………………… vi
圖目錄…………………………………………………………………………………… vii
第一章 緒論…………………………………………………………………………… 1
1.1 簡介……………………………………………………………………… 1
1.2 研究動機與方法………………………………………………………… 4
1.3 論文架構………………………………………………………………… 5
第二章 VCSEL基本理論…………………………………………………………… 6
2.1 VCSEL原理……………………………………………………………… 6
2.2 典型面射型雷射介紹……………………………………………………
2.2.1 氧化物侷限之面射型雷射…………………………………………
2.2.2離子佈植方式之面射型雷射……………………………………… 8
8
9
2.3 結構與量測方法………………………………………………………… 10
2.2.1結構分析…………………………………………………………… 10
2.3.2反射率及波長量測………………………………………………… 12
2.3.3 L-I-V量測系統……………………………………………………… 15
第三章 VCSEL 元件製作……………………………………………………………
3.1水氣氧化法簡介………………………………………………………… 16
3.1.1水氧化機制………………………………………………………… 17
3.1.2水氣氧化法製作步驟……………………………………………… 19
3.2表面淺層蝕刻簡介……………………………………………………… 22
3.2.1表面淺層蝕刻實驗………………………………………………… 23
3.2.2水氣氧化法結合表面淺層蝕刻製作步驟………………………… 24
3.3離子佈植法簡介………………………………………………………… 28
3.3.1離子佈植模擬分析………………………………………………… 29
3.3.2離子佈植加水氣氧化法製作步驟………………………………… 31
第四章 結果與討論……………………………………………………………………
水氣氧化法、水氣氧化法結合表面淺層蝕刻與水氣氧化法結合離子佈植法面射型雷射的基本特性…………………………………………… 35

35
4.2溫度變化下進行量測…………………………………………………… 38
4.3邊模抑制比(SMSR)測量………………………………………………… 41
第五章 結論…………………………………………………………………………… 43
參考文獻………………………………………………………………………………… 44
簡歷……………………………………………………………………………………… 46

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