臺灣博碩士論文加值系統

以陽極處理的方式將高純度的鋁模板製備成多孔性氧化鋁模板，在成長的過程中需謹慎的控制電解液的濃度、溫度與酸鹼度，並精確的供應電壓電流及工作時間，以製作出均一孔徑並具規律性陣列線徑的多孔性氧化鋁模板。
利用電化學沉積法在多孔性氧化鋁模板內填充銦奈米線，之後將電鍍銦奈米線的氧化鋁模板和硫片封入真空玻璃管，並放進高溫爐加熱至500℃持溫10小時形成硫化銦奈米線。
實驗的過程中利用FESEM觀察氧化鋁模板及硫化銦奈米線的形貌，EDS確認硫化銦奈米線元素的定性分析及成分比例，XRD定義出硫化銦奈米線結構型態，最後利用UV量測硫化銦奈米線吸收光譜的變化。

In order to fabricate the nanoporous anodic aluminum oxide (AAO) from the high purity aluminum by anodization process, to carefully control the electrolyte of concentration, temperature and pH value, and precisely support the voltage current and work time, the nanoporous anodic aluminum was formed with uniform porous and regularly ordered nanochannel.
To fill the indium element into the nanochannel of anodic aluminum by electrochemical deposition method, then put the anodic aluminum oxide and Sulfide powder in the glass tube. The glass tube was evacuated by using a pump, and it was placed into the furnace and heated from temperature to 500℃ for 10 hours.
To observed the sample appearance by FESEM instrument in experimental process. The element condition was determined by EDS, and demonstrated the structure of indium sulfide nanowires by X-ray diffraction, to measure the absorbance spectrum by UV machine.

中文摘要 i
Abstract ii
目錄 iii
圖目錄 v
第一章 緒論 1
1.1 奈米材料概念[1] 1
1.1.1零維奈米材料[2] 1
1.1.2一維奈米材料 2
1.1.3二維奈米材料 2
1.2 半導體奈米材料的特殊性質[1] 3
1.2.1 表面效應： 3
1.2.2 體積效應： 3
1.2.3 量子尺寸效應： 4
1.3 研究目的及動機 5
第二章 文獻回顧 6
2.1 硫化銦(Indium Sulfide) 6
2.1.1 硫化銦結構與特性 6
2.2 多孔性結構之氧化鋁模板 6
2.2.1 氧化鋁奈米多孔模板的結構特徵 7
2.2.2 氧化鋁奈米多孔模板的成長機制 8
2.2.3 增加氧化鋁模板孔洞的陣列規則性 16
2.2.4 氧化鋁奈米多孔模板的製備變因 21
2.2.5 氧化鋁奈米多孔模板製備一維奈米結構材料 25
2.3氧化鋁模板成長奈米線的製備方式 25
第三章 實驗方法 31
第四章、結果與討論 32
第五章 結論 33

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