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研究生:林威成
研究生(外文):Wei-cheng Lin
論文名稱:陰極電弧活化沉積方式沉積高sp3類鑽碳膜之反應機構與特性研究
論文名稱(外文):Reaction mechanism and Characterization of sp3-richDiamond-like Carbon film Synthesized by a CathodicArc Activated Deposition Process
指導教授:汪大永汪大永引用關係
指導教授(外文):Da-Yung Wang
學位類別:碩士
校院名稱:明道大學
系所名稱:材料暨系統工程研究所
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2008
畢業學年度:96
語文別:中文
論文頁數:78
中文關鍵詞:類鑽碳膜、陰極電弧活化沉積、電漿檢測
外文關鍵詞:plasma diagnosticCAADDLC
相關次數:
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類鑽碳膜(Diamond-like carbon,DLC)擁有優良的物理與化學特
性,在現代工業中適合多種先進的應用。為了確保薄膜的品質,高sp3/sp2
的碳鍵比例是類鑽碳膜的關鍵特性,因此製程的控制機制必須要
有一定的規則。在本實驗中高sp3類鑽碳膜是以陰極電弧活化沉積方
式(Cathodic arc activated deposition process, CAAD)製備,這種獨特的
製程有利於陰極電弧之電漿引發化學分解反應進而合成類鑽碳膜,這
種高能量的金屬電漿足以催化分解含碳氫氣體,如乙炔,使其形成含
氫的類鑽碳膜;研究中藉由改變不同靶電流來進行相關分析研究。類
鑽碳膜的成形機制可由電漿檢測系統(Optical Emission Spectrometry,
OES)進行研究,從CrN 到DLC 這個轉換過程可由電漿檢測發現Cr、
C2、CN 等光譜訊號,Cr 訊號在40、50、60A 靶電流的製程中,個別
在C2H2/(C2H2+N2)流量比例為47、50、63%出現產生碳化物之轉換
點,轉換點前薄膜結構傾向成形為CrN 結構,轉換點後會有碳化物
的產生,使Cr 光譜訊號強度逐漸降低;當靶電流增加至70 與80A
靶電流的製程中,因為Cr 電漿濃度較高,使碳化物產生後Cr 光譜強
度並沒有因此而下降。另外利用化學電子光譜儀分析(ESCA)與拉曼
光譜儀(Raman spectroscopy)進行類鑽碳膜的顯微結構與碳鍵特性的
分析,獲得70A 靶電流所製備出之類鑽碳膜具有較低之ID/IG
比與較II高之sp3/sp2比例,證明其具有較高之sp3含量,也因為這個原因,其
硬度值達到13Gpa,摩擦係數為0.14,而顯示出有較好的機械性質。
Diamond-like carbon (DLC) films possess outstanding physical and chemical
properties suitable for various advanced applications in modern industry. To ensure the service quality, the sp3/ sp2 carbon bond ratio, as the key characteristic of DLCfilms, has to be regulated through a process control mechanism. In this study, ansp3-rich DLC film was synthesized by using a cathodic-arc activated deposition(CAAD) process. The unique process takes advantage of the cathodic arc plasma totrigger the chemical decomposition reaction for DLC synthesis. The energetic metalplasma catalyzed the decomposition of hydrocarbon gas (C2H2), and induced the formation of the metal doped and hydrogenated DLC films. The formationmechanism for sp3 in DLC were studied by plasma diagnostic (Optical Emission Spectrometry, OES). The main features of the optical spectra emitted from the CAAD process include Cr、CN and C2. The transition point of the C2H2 flow rate at 47、50、63 % flow ratio (C2H2/( C2H2+ N2)) was observed at arc current of 40、50、60A.Below this point, CrN remains the primary phase. The active carbon from the decomposed C2H2 does not react with the atomic Cr from the cathodic arc source.When C2H2 flow rate is above the transition point, both CrN and chroium carbidessuch as Cr3C2and Cr7C3 are coexisted wihtin the film. The transition point was unapparent at arc current 70 and 80A .Tribological test, nano-indenter, Raman IV spectroscopy and ESCA were employed to characterize the mechanical and carbon bond properties of DLC coatings. As a result, a set of optimized synthesis parameters for high- sp
3 DLC films could be obtained.
中文摘要..................................................................................................... I
英文摘要..................................................................................................III
總目錄........................................................................................................V
圖目錄...................................................................................................... IX
表目錄.....................................................................................................XII
第一章 緒論...............................................................................................1
1-1 前言...................................................................................................1
1-2 研究動機與目的...............................................................................3
第二章 文獻回顧......................................................................................5
2-1 電漿反應基本原理與電漿檢測.......................................................5
2-1-1 電漿的產生................................................................................5
2-1-2 電漿檢測.................................................................................10
2-2 類鑽碳膜之結構特性與成長機制.................................................14
2-2-1 類鑽碳膜之結構特性..............................................................14
2-2-2 類鑽碳膜之成長機制..............................................................18
VI
2-2-3 a-C:H 之成長機制..................................................................19
2-3 類鑽碳沉積技術.............................................................................20
2-3-1 離子束沉積法..........................................................................21
2-3-2 脈衝雷射沉積法......................................................................22
2-3-3 磁控濺鍍法..............................................................................23
2-3-4 電漿輔助化學氣相沉積法......................................................24
2-3-5 陰極電弧沉積法......................................................................25
2-4 陰極電弧活化沈積(Cathodic Arc Activated Deposition CAAD) ..27
第三章 實驗方法....................................................................................29
3-1 研究內容與設備............................................................................29
3-2 實驗流程圖....................................................................................30
3-3 實驗步驟.........................................................................................31
3-3-1 實驗材料.................................................................................31
3-3-2 試片前處理.............................................................................31
3-3-3 類鑽碳膜製備..........................................................................31
3-5 分析儀器........................................................................................34
3-5-1 光激發光譜儀(Optical Emission Spectrometer ,OES) ..........34
3-5-2 拉曼分析光譜(Raman spectroscopy) ................................35
VII
3-5-3 化學電子光譜儀分析(Electron Spectroscopy for Chemical
Analysis ESCA) ..............................................................................36
3-5-4 掃描式電子顯微鏡 (FEG- Scanning electron microscope)...38
3-5-5 X 光繞射儀(X-ray Diffractometer,XRD).............................39
3-5-6 輝光放電成分分佈分析儀(Glow Discharge Spectrometer
GDS)................................................................................................40
3-5-7 奈米壓痕(Nanoindenter) ........................................................40
3-5-8 磨耗試驗(Pin-on-disk Tribometer) .........................................41
第四章 結果與討論................................................................................43
4-1 類鑽碳膜製程之轉換機制研究....................................................43
4-1-1 類鑽碳膜製程CrN to DLC 轉換過程之OES 量測分析....44
4-1-2 類鑽碳膜製程CrN to DLC 轉換過程晶體結構分析...........54
4-2 類鑽碳膜形貌與鍵結能之特性分析............................................56
4-2-1 類鑽碳膜之形貌與成分分佈分析.........................................57
4-2-2 靶材毒化對成分分佈之影響.................................................61
4-2-3 不同金屬含量類鑽碳膜之鍵結能分析.................................64
4-3 類鑽碳之機械性質分析................................................................69
4-3-1 不同金屬含量類鑽碳膜對硬度之影響.................................69
VIII
4-3-2 不同金屬含量類鑽碳膜對磨耗性質之影響.........................70
第五章 結論.............................................................................................72
參考文獻...................................................................................................74
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