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研究生:徐譽榕
論文名稱:聚乙烯醇對化學銅析度的影響
論文名稱(外文):Effects of Polyvinyl alcohol on Electroless Copper Deposition
指導教授:梁世明梁世明引用關係
學位類別:碩士
校院名稱:明新科技大學
系所名稱:化學工程研究所
學門:工程學門
學類:化學工程學類
論文種類:學術論文
論文出版年:2008
畢業學年度:96
語文別:中文
論文頁數:112
中文關鍵詞:化學鍍銅添加劑聚乙烯醇銅鍍層結晶結構電磁波遮蔽效果添加劑銅鍍表面型態
外文關鍵詞:electroless copper platingadditivespolyvinyl alcoholsurface morphologycrystal structureelectromagnetic interference(EMI)
相關次數:
  • 被引用被引用:8
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  • 下載下載:81
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由於銅金屬具有較低之電阻率、應力裂縫及較好的電性可靠度,加上金屬鑲嵌技術之研發,近年來超大型積體電路(ULSI)之製程漸漸以銅導線來取代過
去的鋁合金導線。利用金屬鑲嵌技術製作銅導線之關鍵在於銅金屬填入技術之開發,而化學析鍍銅技術為可應用於銅金屬填入之技術,近年來為發展IC銅導線研發之重點。
本研究發展於化學銅鍍液中加入硼酸緩衝溶液,除了可以維持鍍液的pH值之外,還可以有效的提升鍍液的穩定性,但銅鍍層較粗糙、電阻也較高。為改善鍍層的性質,本研究探討共同添加碘化鉀和聚乙烯醇對化學鍍銅鍍層之析鍍速
率、表面形態、組成份、電阻之影響。結果發現添加穩定劑碘化鉀及聚乙烯醇會使析鍍速率變慢、但使鍍層的表面平整、結構緻密等。
本研究另一個重點在於將析鍍後的銅箔試片運用於電磁波遮蔽方面,發現將聚乙烯醇與碘化鉀一同加入析鍍液中,會使得電磁波的遮蔽效果從原本的50dB上升至78.7dB。
Recently copper has been used to replace Al metallization in ultra large scale
integrated (ULSI) technology because of low resistivity and stress-induced voiding. Copper can be deposited by physical vapor deposition, thermal-induced reflow,
chemical vapor deposition, electroplation and electroless deposition. Electroless
copper deposition can be processed with high speed in mass production. Therefore,
Electroless copper deposition would be a potential technology for the manufacture of
ULSI.
The main purpose of this research is to investigate the effect of potassium iodide
and polyvinyl alcohol(PVA) on the plating rate, surface morphology, crystal and
resistivity of copper deposition. These results show that with addition of potassium
iodide and polyvinyl alcohol(PVA) as additives to the borate buffered electroless
copper plating solutions was stabilized and the plating rate was decreased ,surface
morphology of copper deposition was smoothed, the size of the crystal was decreased, and show dense structure plating solution. The charge transfer resistance and double
layer capacitance of the working electrode were increased.
There has another purpose in this study that is applied to electromagnetic interference (EMI) for electroless copper plating, We find that two kinds of additives PVA and KI were added to the plating bath together, Increasing EMI shielding effect (SE) from 50dB to the best SE of 78.7dB.
摘 要 i
Abstract ii
誌 謝 iii
目 錄 iv
表 索 引 vi
圖 索 引 vii
第一章 緒論 1
1.1 前言 1
1.2 文獻回顧 5
1.3 化學銅原理 8
1.4 化學銅析鍍液之組成及其作用 12
1.5 化學銅反應及反應機制 14
1.5.1化學鍍銅之反應 14
1.5.1化學銅反應機制 15
1.6 電磁波遮蔽原理理論及要點 17
1.7 研究動機 23
第二章 實驗方法及儀器分析原理 25
2.1化學銅析鍍之化學藥品 25
2.1.1前處理藥品配置 27
2.1.1.1基材前處理 27
2.1.1.2前處理配方 29
2.1.1.3化學鍍銅液配方 29
2.1.2化學鍍銅實驗步驟 29
2.1.2.1試片規格 29
2.1.2.2試片前處理流程圖 30
2.2化學鍍銅層分析儀器與量側原理 31
2.2.1掃描式電子顯微鏡 31
2.2.2 X-ray粉末繞射儀 32
2.2.3四點探針電阻率量測儀 34
2.2.4向量網路分析儀與同軸測試法 35
第三章 結果與討論 37
3.1 化學銅析鍍速率與厚度 37
3.2 化學銅鍍層表面形態之探討 44
3.3 化學銅鍍層結晶結構、晶粒大小分析 55
3.4 化學銅鍍層之電阻率 73
3.5 電磁波遮蔽效果之結果分析 79
第四章 結論 90
參考文獻 91
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