臺灣博碩士論文加值系統

為了增加電子產品的功能及使得它們的體積變得更小，在晶圓和印刷電路板的製造技術上都有改變。例;如，晶圓製造技術上運用了雙鑲嵌製程─即是利用直接電鍍的方式將銅導線填充於導通道中，取代了傳統的鋁製程。為完成印刷電路板中的高密度內連接，增層法被應用於連接印刷電路板中的每個盲孔和通孔。盲孔或通孔的金屬化製程也是直接利用電鍍的方式完成。本論文在於開發出一種新的平整劑─是銅電鍍液中的一種重要添加劑，並了解平整劑在導孔填充中的影響。
一開始我們選用四種新穎的平整劑於導孔填充部份並試著比較不同平整劑的填充能力。進一步的，吾人找出一種新穎的平整劑─命名為TNTBC，當硫酸濃度控制在適當的濃度下在盲孔或通孔金屬化製程中有較好的填充能力。根據金相光學顯微鏡、掃描式電子顯微鏡和X光繞射光譜的結果，我們發現在銅電鍍液中不同濃度的硫酸不僅會改變銅沈積的結構也會影響到電鍍液的填充能力。吾人使用計時電位法和循環伏安法來證明硫酸能減少TNTBC的消耗速率。吾人又利用掃描式電子顯微鏡觀察在改變質傳效用下的銅沈積之表面結構。根據銅沈積結構變化，吾人發現TNTBC和氯離子會形成壹層錯合物薄膜吸附於銅層上。這一層錯合物薄膜會減少銅離子的通量因此使得銅晶粒成長變得較困難。根據能量散射光譜分析，吾人發現TNTBC會夾鍍在銅沈積中。依據能量散射光譜和電鍍填孔結果，吾人證明了填孔機制遵循吸附、消耗和擴散(dsorption-comsumption-diffustion, ACD)機制。

In order to enhance the functions of electronic products and let their size become smaller, the manufacture teachnologies of chips and printed circuit boards (PCBs) have to be changed. For example, the Dual Damascus Process has been used in chip manufacture to replace the traditional aluminum process, that is, copper conducting lines are filled into trenches by means of electroplating. To carry out high density interconnectionof PCB, “build up process�� is employed to connect each blind via or though hole built in the PCB. The matellization process of blind via or though hole is also achieved by means of copper electroplating. The major topic of this thesis is to develop a new leveler, which is an important leveler in copper electroplating solution and to understand the effect of the leveler in hole filling.
In the beginning, we selected four novel additives as levelers for hole filling and tried to compare the filling performance of various leveler. Furthermore, we found out that a novel leveler, namely TNTBC, has better filling performance in metallization of blind via or though hole when the concentration of surfluric acid is controlled at an appropriate level. According to those results of OM, SEM and XRD, we discovered that different concentration of sulfuric acid in the copper electroplating solution does not only change the structure of copper deposit but also influence the filling capability of the plating solution. We used chronopotentimetry and cyclic voltammetry method to prove that sulfuric acid can reduce the comsumption rate of TNTBC. We used SEM to observe the topographic of the copper deposit under the condition of various effectiveness of mass transport. According to the structure variation of the copper deposit, we found that TNTBC and chloride ions may form a complex film to adsorb onto copper layer. The adsorbed complex film reduced the flux of copper ion and thus made the growth of copper grain more difficult. According to the EDS analyses, we found that TNTBC is incorporated into the copper deposit. According to the results of EDS analyses and the filling plating, we proved that the filling mechanism does obey a model of adsorption-comsumption-diffustion (ACD) proposed in a previous work.

誌謝..............................................................III
中文摘要...........................................................VI
英文摘要..........................................................VII
圖目錄...........................................................VIII
一、緒論............................................................1
(一)印刷電路板技術的介紹與電化學沈積技術在其中的運用...............1
(二) 晶圓半導體製程的介紹與電化學沈積技術在其中的運用...............4
二、理論與文獻回顧..................................................5
(一)電化學電鍍方法：................................................5
1. 脈衝與反脈衝電鍍法(PULSE AND PULSE REVERSE PLATING).............5
2.直流電鍍法(DIRECT CURRENT PLATING)................................6
(二)添加劑的介紹：..................................................6
1. 無機添加劑......................................................6
(1)氫離子(H+ ).......................................................6
(2)氯離子(CL-).......................................................6
2.有機添加劑.......................................................12
(1)加速劑(ACCELERATOR).............................................12
(2)抑制劑(SUPPRESSOR)..............................................15
(3)平整劑(LEVELER)：...............................................21
(三)電化學基礎理論：................................................29
1.活性極化：.......................................................29
2.濃度極化：.......................................................30
3.電阻極化：.......................................................31
(四)電化學沈積法填充導孔模擬理論...................................32
三、研究動機.......................................................36
四、實驗裝置、步驟與實驗藥品.......................................37
(一)實驗裝置.......................................................37
1.哈林試驗槽電鍍實驗...............................................37
2.恆電位/電流儀(POTENTIOSTATS/GALVANOSTATS)........................39
3.金相顯微鏡(OPTICAL MICROSCOPE，OM)...............................40
4.能量散射光譜儀(ENERGY DISPERSIVE SPECTROMETER，EDS)..............41
5.掃描式電子顯微鏡(SCANING ELECTRON MICROSCOPE，SEM)...............41
(二) 實驗步驟......................................................42
1.哈林試驗槽電鍍實驗...............................................42
2.計時電位分析法（CHRONOPOTENTIMETRY，CP）.........................42
3.循環線性掃描伏安法(CYCLIC LINEAR SWEEP VOLTAMETRY，CLSV).........43
(三)實驗藥品：......................................................44
五、實驗結果與討論：...............................................45
(一)不同雜環類平整劑的初步電鍍及計時電位實驗比較及分析：...........45
(二)改變鍍液中氫離子濃度對電鍍填孔結構的影響：......................53
(三)有關平整劑TNTBC受到硫酸成分影響情況之分析與探討：...............66
(四)平整劑TNTBC填充導孔行為與機制探討：.............................76
五、結論：.........................................................110
六、參考文獻......................................................111

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