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研究生:陳穎慶
研究生(外文):Ying-Ching Chen
論文名稱:應用於太陽能電池之電漿後處理氧化鋅掺鋁薄膜之研製
論文名稱(外文):Fabrication of post plasma treated aluminum doped zinc oxide thin films for solar cell applications
指導教授:汪芳興
指導教授(外文):Fang-Hsing Wang
學位類別:碩士
校院名稱:國立中興大學
系所名稱:光電工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
畢業學年度:96
語文別:中文
論文頁數:103
中文關鍵詞:透明導電膜氧化鋅掺鋁薄膜射頻磁控濺鍍系統電漿增強化學氣相沉積電漿
外文關鍵詞:Transparent conductive oxideAluminum doped zinc oxideR.f. magnetron sputtering systemPECVDPlasma
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本論文的實驗可分為兩個部份:前半段的實驗由射頻磁控濺鍍系統(r.f. magnetron sputtering system)製備氧化鋅掺鋁(AZO)薄膜;緊接著,前製程製備之薄膜經由電漿增強化學氣相沉積(PECVD)施以不同的氣體電漿後處理。
基板溫度、工作壓力以及不同比例之氬氣與氫氣混合之電漿環境對於射頻磁控濺鍍系統所製備之氧化鋅掺鋁薄膜皆有關聯性的影響。在前半段的製程,我們的溫度皆控制在200C,除非參數是溫度外(RT~300C);壓力始終維持在5E-2Torr,除非變因是壓力(1E-1 Torr~1E-2 Torr);氬氣流量也始終控制在30 sccm, 除非是氬氣與氫氣混合比例之電漿環境(2%~11.76%)。
各種不同環境前製程所製備之薄膜,接著利用電漿增強化學氣相沉積施以電漿處理。氫氣先被用來做為實驗的氣體電漿,根據不同的後處理時間(0 min.~120 min.)以研究是否有飽和趨勢呈現。各種不同的氣體,如:甲烷(CH4)、氨氣(NH3)、氬氣(Ar)以及氟烷(CF4)則根據氫氣所呈現的飽和趨勢,施以電漿處理(60 min.)。藉由前後製成的差異性,薄膜的結構、電學以及光學特性將被研究及比較。
氣體電漿後處理可提供原子級的能量,因此不需像退火般的高溫製程,便能對薄膜的電學以及光學有明顯的改善效果。此方法可使得氧化鋅掺鋁薄更被廣泛的應用。
The experiment can be divided into two sections: AZO films are prepared by r.f. magnetron sputtering system and PECVD follows up a post plasma treatment on the pre-sputtering films.
The related influences of substrate temperature, working pressure and different H2 + Ar ambient are investigated during r.f. magnetron sputtering deposition of AZO films. At pre-sputtering process, the temperature is always kept at the range 200C expect for the coefficient is temperature (RT~300C).Besides, the working pressure except for the variation is pressure(1E-1Torr~1E-2Torr).always is maintained at the 5E-2Torr.The chamber is always preserved under 30 sccm Ar flow rate except for the different H2 gas flow ratio (2%~11.76%).
Post gas plasma treatments follow up the different pre-sputtering AZO films by PECVD. Amphoteric H2 plasma is firstly induced to investigate if the saturation tendency occurs during different treated times (0~120 min.). Different gas plasma such as CH4, NH3, Ar and CF4 carry on the experiment at the critical saturation condition (60min.). The structural, electrical and optical characteristics will be studied and compared in order to investigate the influences of the gas plasma on AZO films.
In the recent years, the flexible substrates have been applied for many optoelectronic devices, but are limited by the poor sustaining in high temperature. Many studies on the post treatment on AZO films have been investigated, however a high temperature is needed to anneal. Post plasma treatment for increasing the electrical and optical properties has been investigated. Here provides a low temperature procedure of post plasma treatment and produces atomic plasma in a different way. This method can have a major effect on widening the applications of the flexible substrate.
Chapter 1 Framework---1
1.1 Transparent conductive oxides---1
1.2 TCO and light trapping in solar cells---4
1.3 Background and motivation---7
Chapter 2 Literatures review---9
2.1 Zinc oxide---9
2.2 Conductive mechanism of AZO---15
2.3 Optical properties of AZO---19
2.4 Hydrogen plays an important role in AZO---23
2.5 Plasma for thin film deposition---26
2.6 Radio frequency magnetron sputtering---33
2.7 Thin film solar cells---37
Chapter 3 Experiment & Measurement---42
3.1 Experiment---42
3.2 Measurement---47
Chapter 4 Results & Discussion---54
4.1 Structural properties at pre-sputtering process---54
4.2 Electrical properties at pre-sputtering process---62
4.3 Optical properties at pre-sputtering process---66
4.4 Stability at pre-sputtering process---69
4.5 Structural properties by post hydrogen plasma treatment---71
4.6 Electrical properties by post hydrogen plasma treatment---74
4.7 Optical properties by post hydrogen plasma treatment---76
4.8 Electrical properties by post gas plasma treatment---79
4.9 Optical properties by post gas plasma treatment---89
4.10 Structural properties by post gas plasma treatment---92
Chapter 5 Conclusions---95
5.1 Summary---95
Reference---99
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