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研究生:賴思涵
研究生(外文):Sih-Han Lai
論文名稱:CMOS微型化Balun之設計
論文名稱(外文):Design of small Chip-Area Balun in CMOS Technology
指導教授:許�琠�
指導教授(外文):Heng-Ming Hsu
學位類別:碩士
校院名稱:國立中興大學
系所名稱:電機工程學系所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2008
畢業學年度:96
語文別:中文
論文頁數:107
中文關鍵詞:分波器變壓器
外文關鍵詞:CMOStransformers baluntransformersbalun
相關次數:
  • 被引用被引用:3
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本論文主要分為五個實驗主題,第一個主題提出堆疊型Balun,在同相同自感值下,堆疊型Balun比起平面型Balun可得較好的特性,耦合係數提升58%,並且約略減少佈局面積80%,使高耦合量低成本Balun被達成。第二主題為探討堆疊型Balun在不同線寬下之設計,線寬的變化使基底損失有所變化,造成相位不平衡的偏差,故線寬較寬的Balun適用於低頻段,其相位不平衡在6GHz下有最佳表現,反之,線寬較細的Balun適用於高頻段,相位不平衡在16GHz下有最佳表現,在電路的運用上,可依不同頻段的運用選擇其適用之線寬。第三主題為高圈數比與高耦合量Balun之設計,此設計下的圈數比約為1:0.6:0.6至1:2.6:2.6,與傳統型Balun[5]比較,在相同圈數比下約略減少90%的佈局面積,且線距較近,故可得較大耦合量,但因此設計相當費時,且模擬S21、S31不易準確,故提出第四主題堆疊對稱式,佈局方式左右對稱,使設計上不用透過模擬就可得較好的相位、功率不平衡,相位、功率不平衡分別為0.5度與0.4db以下,比起第三主題與文獻[15]有更佳的特性,未來可透過多圈的設計藉此達成高圈數比與高耦合量的需求,為此佈局進一步之研究。
  第五主題運用可變寬度理論,探討寬度的變化對變壓器特性之影響,使其繞線得最小阻值,量測所得DC阻值約為改善12%,並在相同自感值下,使變壓器品質因數有所提升。
This thesis includes five topics. Firstly, the stacked Balun structure will be addressed. The measurement shows that the stacked Balun structure not only improvements the coupling coefficient with 58% but also saves layout area with 80% comparing with planar structure. Therefore, the high coupling and low cost of Balun is achieved in CMOS technology. Afterward, the stacked Baluns with different coil width are designed to investigate the performance. Measurement shows that the wide metal coil is suitable to be operated at low frequency and the narrow one is suitable to be operated at high frequency.
The Balun is designed for the high coupling and the high turn number ratio is depicted in the third topic. The range of turn number ratio is from 1:0.6:0.6 to 1:2.6:2.6 by compared with traditional Balun[5] . The proposed device decreases the chip area with 90%. The stacked symmetry would be discussed in the fourth topic, this structure is bilateral symmetry. It is easier to design that the phase and amplitude imbalance. The phase and amplitude imbalance are small than 0.5 degree and 0.4 dB, respective. Based on proposed structure, the multi-turn layout is implemented to obtain high turn number ratio and high coupling coefficient in the future work.
Finally, the design of the coil width is addressed to get the minimum resistance. It improves the quality factor of transformer by keeping the same self inductance. The measurement results show that the improvement of metal resistance approximates to the value of 12%.
誌謝 I
摘要 II
Abstract III
目錄 IV
圖目錄 VI
表目錄 IX
第一章 序論 1
1-1 研究動機 1
1-2 文獻回顧 1
1-3 論文架構 3
第二章 堆疊式Balun設計 5
2-1 簡介 5
2-2 原理介紹 7
2-2-1 變壓器原理 7
2-2-2 Kelvin量測 13
2-2-3 De-embedding 14
2-2-3-1 四埠可變長度內連線去嵌化法 14
2-2-3-2 四埠可變長度內連線去嵌化法之程序 17
2-3 平面型Balun與堆疊型Balun之比較 19
2-3-1 佈局設計 19
2-3-2 量測分析 23
2-3-3 結論 31
2-4 不同線寬之堆疊型Balun 31
2-4-1 佈局設計 31
2-4-2 量測分析 34
2-4-3 結論 47
2-5 高耦合量1:n變壓器 47
2-5-1 佈局設計 48
2-5-2量測分析 54
2-5-3 結論 63
2-6 堆疊對稱型Balun 64
2-6-1 佈局設計 64
2-6-2量測分析 67
2-6-3 結論 79
第三章 可變寬度變壓器 80
3-1 簡介 80
3-2 可變寬度設計理論 80
3-3 佈局設計 82
3-4 量測分析 90
3-5 等效電路模型建立 98
第四章 結論與未來工作目標 104
4-1 結論 104
4-2 未來工作目標 104
參考文獻 105
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