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研究生:吳旭晟
研究生(外文):SYU-CHENG WU
論文名稱:利用旋轉塗佈法及熱蒸鍍法製備硫化鎘及摻銅硫化鎘半導體薄膜
論文名稱(外文):Preparation of CdS and Cu-CdS semiconductor thin film by Spin-coating and thermal evaporation
指導教授:陳進成陳進成引用關係
指導教授(外文):Chin-Cheng chen
學位類別:碩士
校院名稱:國立成功大學
系所名稱:化學工程學系碩博士班
學門:工程學門
學類:化學工程學類
論文種類:學術論文
論文出版年:2008
畢業學年度:96
語文別:中文
論文頁數:113
中文關鍵詞:量子點硫化鎘旋轉塗佈法熱蒸鍍法
外文關鍵詞:CdSQDSpin-coatingthermal evaporation
相關次數:
  • 被引用被引用:6
  • 點閱點閱:639
  • 評分評分:
  • 下載下載:180
  • 收藏至我的研究室書目清單書目收藏:0
目前的照明設備,多數會產生熱及污染等的問題,因此開發具無水銀污染、發光效率高等優點之半導體發光二極體為必然趨勢。本研究構想製作量子點型的發光二極體,利用量子點本身高效能的發光,期待可藉由量子侷限效應在可見光譜的發光波長內調控發光顏色。
本論文分成兩部分,首先以微波法製備出硫化鎘量子點,再利用旋轉塗佈法鍍出光學薄膜,期望經回火處理後能達到P-N Junction 效果。
第二部分使用熱蒸鍍法鍍膜,並對薄膜做光譜、成分、表面形態、載子濃度,再利用熱擴散將銅摻雜進入硫化鎘薄膜內形成P-Type,並直接形成P-N Junction,並與第一部分製備之薄膜比較電性。本研究結果顯示使用旋轉塗佈法製備出元件,雖然可以形成P-N Junction,但元件具有很大漏電流與電阻,其發光程度太低以致於無法偵測到光源。從實驗結果可看出利用熱蒸鍍法製備元件能有效的改善漏電流與降低電阻,並使電流注入量上升,可能是真空系統真空度的影響使元件中存在許多非輻射覆合中心,造成非輻射機率大增,導致元件無法發光。
比較兩種鍍膜方法所得知結果,旋轉塗佈法之製程較簡便,但其P-N接面處會存在較多漏電路徑而產生相當大之漏電流,相反的利用熱蒸鍍法能有效的改善漏電問題,但其製程要求及設備費較高。
Light-emitting diodes (LEDs) have the advantages of no mercury pollution and high emission efficiency. Developments of LEDs not only serve to improve the disadvantages of traditional illuminants but also save the energy and protect the environment of the world. This research is aimed at manufacturing QD LED, making to use of the high performance luminescence and the quantum confinement effect to control the luminescence color of QD.
In this study, CdS quantum dots are synthesized by sol-gel method assisted with microwave heating Spin-coating was method was used to prepare membranes expected to be able to form P-N Junction after sinterins.
In the second part, thermal evaporation method was used to prepare thin. Film The optical properties were analyzed by PL and UV, the surface morphology was observed by SEM, and the carrier concentration mobility was meassured by Hall effect And then thermal diffusion of copper into the CdS film was applied to transform CdS into P-Type Cu-CdS film to form P-N junction. Its electricity was compared with spin-coating method.
The experimental results show that spin-coating method though can form P-N Junction, the device has very large leaking current and high resistance. The emitting intensity is too low to detect.
From experimental we can find out that using thermal evaporation system to prepare device can effective improve the leak of electric current and the resistance it will increase the electric current, Maybe degree of vacuum is so low that the device has a lot of non-recombination center and decrease the radiation probability, make its component not emit the light.
Comparing these two methods, Spin-coating is simple and convenient, but P-N contact surface has more leaking channel than using the thermal evaporation method, The thermal evaporation method can effective improve leak electricity issue, but the process procedure is complicated and the equipment cost is high.
致謝.…...………………………………………………………...…………I
中文摘要……………………………………………………….…………III
英文摘要……………………………………………………………….…IV
總目錄……………………………………………………………..………VI
圖目錄…………………………………………………………….……….X
表目錄……………………………………………………………..….…XIV
符號說明………………………………………………………….……..XV
第一章 緒論 1
1-1 發光二極體之發展 1
1-2 文獻回顧 1
1-2-1 半導體發光材料 4
1-2-2 Ⅱ-Ⅵ族半導體發光材料 5
1-2-3 硫化鎘奈米微粒之研究 11
1-2-4 發光二極體薄膜之製備 15
1-3 研究動機 19
第二章 背景理論 20
2-1 半導體物理基礎 20
2-1-1 半導體之特性 20
2-1-2 量子點的特性 23
2-1-3 半導體量子侷限效應理論 26
2-2 微波法 30
2-3 旋轉塗佈法 33
2-3-1 旋轉塗佈法程序 35
2-4 發光二極體原理 37
2-4-1 P-N Junction 37
第三章 實驗 40
3-1 實驗流程 40
3-2 實驗藥品及儀器 44
3-3 實驗步驟 45
3-3-1 ITO與基板之準備 45
3-3-2 硫化鎘量子點之準備 45
3-3-3 旋轉塗佈硫化鎘薄膜 46
3-3-4 利用電漿蝕刻 47
3-4 真空蒸鍍 48
3-5 熱處理程序 49
3-6 電極選擇 51
3-7 分析儀器及方法 52
第四章 實驗結果與討論 55
4-1 旋轉塗佈薄膜之光學及型態分析 55
4-1-1 旋轉塗佈薄膜光學分析 55
4-1-2 旋轉塗佈鍍膜程序選擇 57
4-1-3 雙層回火完鍍上電極量測電性 61
4-1-4 接面形態 62
4-1-5 利用高分子填補缺縫 64
4-1-6 蝕刻後P-N 接面圖 67
4-1-7 蝕刻後薄膜電性探討 68
4-1-8 未經蝕刻直接蒸鍍電極 73
4-1-9 太陽光檢測 75
4-2 利用熱蒸鍍法製備硫化鎘薄膜 78
4-2-1 硫化鎘粉末分析 79
4-2-2 單層硫化鎘薄膜光學量測 81
4-2-2 (a)光致發光光譜儀測試 81
4-2-2 (b)UV 吸收光譜分析 82
4-2-3 載子濃度量測 83
4-2-4 薄膜表面形態觀測 85
4-2-5 利用表面熱擴散摻雜 87
4-2-6 表面熱擴散完之電壓-電流曲線 88
4-2-7 利用共蒸法製備元件 92
第五章 結論 96
參考文獻 98

















圖目錄
圖1-1 LED發展之過程與效率 3
圖1-2 複合發光示意圖 4
圖1-3 各種半導體化合物之能隙與晶格常數之關係 11
圖2-1 導體、絕緣體及半導體之能帶…………………………………22
圖2-2 直接與間接能隙圖示意圖 23
圖2-3 理想中(a)巨相(b)量子井(c)量子線(d)量子點之量子能量與量子狀態密度的關係 25
圖2-4 矽晶體間接能隙變為直接能隙 25
圖2-5 矽晶體在不同粒徑下之發光波長 26
圖2-6能量傳遞方式示意圖 32
圖2-7旋轉塗佈程序圖 34
圖2-8旋轉塗佈程序圖 37
圖2-9電子與電洞無法越過接面形成空乏區示意圖 38
圖2-10多數載子通過PN接面進而通過能障複合發光示意圖 39
圖3-1旋轉塗佈示意圖 46
圖3-2射頻電漿系統 47
圖3-3真空蒸鍍系統 48
圖3-4熱處理裝置圖 50
圖3-5鋁電極與N型半導體接觸前後示意圖 51
圖3-6熱探針法示意圖 53
圖4-1單層硫化鎘薄膜PL圖 56
圖4-2雙層硫化鎘與銅摻雜硫化鎘薄膜之PL圖 57
圖4-3鍍完P-type 後馬上鍍N-type顯微鏡圖 58
圖4-4鍍完P-type烘乾再度N-type 59
圖4-5鍍完P-type回火完再鍍上N-type 60
圖4-6雙層回火完之電流-電壓圖 61
圖4-7旋轉塗佈法示意圖 62
圖4-8 Cu-CdS與CdS接面部分各部位之電子顯微鏡圖 63
圖4-9薄膜接面中間以45度傾斜角觀察缺縫電子顯微鏡圖 63
圖4-10 AFM中間裂縫圖 64
圖4-11利用高分子填補流程圖 65
圖4-12電子顯微鏡膜厚量測 66
圖4-13 Alpha-Step絕緣層厚度 66
圖4-14蝕刻後薄膜厚度變化量圖 67
圖4-15電子顯微鏡接面 68
圖4-16 Cu-CdS 蝕刻完電流-電壓曲線圖 69
圖4-17 Cu-CdS 和CdS 蝕刻完電壓-電流曲線圖 71
圖4-18未蝕刻Cu-CdS 薄膜之電流-電壓圖 73
圖4-19未蝕刻Cu-CdS與CdS薄膜之電壓-電流曲線圖 74
圖4-20蝕刻後之Cu-CdS與CdS薄膜照光與不照光電流-電壓圖比較圖
75
圖4-21未蝕刻CdS與Cu-CdS薄膜照光與不照光電流-電壓比較圖 .76
圖4-22一個具有電阻負載的pn接面太陽能電池示意圖 77
圖4-23具有漏電路徑之等效電路模型 78
圖4-24硫化鎘粉末電子顯微鏡圖 80
圖4-25硫化鎘成分分析圖 80
圖4-26熱蒸鍍法單層硫化鎘薄膜PL圖 81
圖4-27熱蒸鍍法雙層硫化鎘與硫化鎘摻雜銅薄膜PL圖 82
圖4-28 CdS薄膜UV吸收光譜 83
圖4-29利用霍爾效應量測載子濃度示意圖 84
圖4-30霍爾量測圖 85
圖4-31熱蒸鍍硫化鎘薄膜電子顯微鏡圖 86
圖4-32熱蒸鍍薄膜成分分析圖 87
圖4-33表面參雜銅元件示意圖 88
圖4-34表面熱擴散後之電流-電壓曲線圖 89
圖4-35熱擴散能帶示意圖 90
圖4-36表面熱擴散完之電壓-電流對數圖 91
圖4-37電激發光光譜儀檢測 91
圖4-28共蒸法示意圖 93
圖4-29利用共蒸法製備元件切面 94
圖4-30共蒸法成分分析圖 95
圖4-31共蒸法製備元件電流-電壓圖 95








表目錄
表1-1整個半導體發光材料歷程 8
表1-2半導體之能帶結構與能隙 9
表1-3常見半導體參數表 10
表2-1直接能隙半導體晶體之參數 29
表2-2不同塗佈技術應用的膜厚範圍與其均勻度 34
表4-1實驗大綱 55
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