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研究生:鄧允斌
研究生(外文):Yun-pin Teng
論文名稱:射頻磁控濺鍍ZnO:Bi,Ag,Mg薄膜之特性研究
論文名稱(外文):Characteristic of ZnO:Bi,Ag,Mg Thin Films by RF Magnetron Sputter
指導教授:張炎輝張炎輝引用關係
指導教授(外文):Yen-hwei Chang
學位類別:碩士
校院名稱:國立成功大學
系所名稱:材料科學及工程學系碩博士班
學門:工程學門
學類:材料工程學類
論文種類:學術論文
畢業學年度:96
語文別:中文
論文頁數:117
中文關鍵詞:濺鍍氧化鋅
外文關鍵詞:sputterzinc oxide
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本實驗利用VA族元素Bi掺雜於ZnO,以磁控濺鍍系統沉積薄膜於藍寶石基板上,搭配適當溫度的熱處理後量測其性質。發現在熱處理後的ZnO:Bi薄膜電阻率會隨溫度上升而下降。在同樣的熱處理溫度下,隨掺雜量的增加其電阻上升,所有掺雜Bi的ZnO薄膜皆為n型電性,經由實驗證據顯示,Bi並沒有取代Zn位置,而是取代了O的位置。
本實驗另一階段乃利用Ag掺雜Mg0.1Zn0.9O,期望得到p型電性的Mg0.1Zn0.9O。發現在600°C下熱處理後的Mg0.1Zn0.9O:Ag薄膜之電性由n型轉變成為p型,電阻也同時大幅上升,是因為Ag在熱處理的過程中氧化態增加。隨著熱處理溫度繼續升高,Ag的氧化態也會減少,使薄膜的電阻下降,但薄膜仍為p型電性。
Bismuth doped zinc oxide and silver/magnesium co-doped zinc oxide thin films on C-plane sapphire have been prepared by rf magnetron sputter system. The ceramic targets with different dopant weight and mole percentage were used. Films were post-annealed in vacuum with varied temperature. As annealing temperature raised, the resistivity of ZnO:Bi thin films reduced. Heat treatment at same temperature, the resistivity of ZnO:Bi thin films increased with higher dopant. But all films exhibit n-type conductivity. Results show that bismuth ion did not substitute for zinc ion ,but oxygen ion.
For silver/magnesium co-doped zinc oxide films, it was found when annealed at temperature above 600°C, the conductivity of MgZnO:Ag converted n-type to p-type, resistivity raised greatly in the same time. It is because oxidation state of silver icreased by heat treatment. The oxidation state of silver and resistivity of MgZnO:Ag reduced with heat treated temperature increased continually, but the conductivity of films is p-type still.
總目錄
摘要 ......................I
Abstract ..................II
總目錄............ ........III
表目錄.....................VI
圖目錄.....................VII
第一章 緒論..............1
1-1 前言...................1
1-2 氧化鋅簡介.............1
1-4 氧化鋅之備製...........4
1-5 實驗動機與目的......... 6
第二章 文獻回顧...........11
2-1 P型氧化鋅之發展........11
2-2 其他VA族元素之掺雜.....12
2-3 其他元素之掺雜 .........14
第三章 實驗方法與儀器.....16
3-1 實驗材料準備...........16
3-1-1 基板.................16
3-1-2 靶材.................16
3-2 實驗流程...............17
3-2-1 實驗參數.............18
3-3 真空濺鍍系統...........19
3-4 快速熱退火系統.........19
3-5 量測系統...............20
3-5-1 X光繞射分析..........20
3-5-2 電性量測.............21
3-5-2 光學量測.............23
3-5-3 膜厚量測.............24
3-5-4 成份分析.............24
3-5-5 表面型態觀察 .........25
第四章 結果與討論.........37
4-1 結構分析.........................37
4-1-1 製程參數對鍍層結構之影響.......37
4-1-2 掺雜量對鍍層結構之影響.........39
4-1-3 熱處理對鍍層結構之影響.........42
4-2 ZnO薄膜的厚度....................56
4-2-1 掺雜量的影響...................56
4-2-2 Ar/O2流量比的影響..............57
4-2-3 濺鍍功率的影響.................57
4-3 表面型態分析.....................62
4-3-1 Ar/O2流量比對表面形態的影響....62
4-3-2 掺雜量對表面形態的影響.........62
4-3-3 濺鍍功率對表面形態的影響.......63
4-3-4 AFM表面觀察....................64
4-4 成份分析.........................76
4-4-1 EDS分析........................76
4-4-2 XPS分析........................77
4-5 電性分析.........................84
4-5-1 Bi掺雜對電性的影響.............84
4-5-2 Ag與Mg掺雜對電性的影響.........85
4-6 光學性質.........................92
4-6-1 UV-VIAS 量測...................92
4-6-1-1 Ar/O2流量比對穿透率的影響....92
4-6-1-2 掺雜量對穿透率的影響.........93
4-6-1-3 熱處理對穿透率的影響.........94
4-6-1-4 能隙變化.....................95
4-6-2 PL 量測........................96
第五章 結論........................108
參考文獻............................109
致謝................................116
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