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研究生:張文智
研究生(外文):Wen-chih Chang
論文名稱:利用射頻磁控濺鍍系統製備BiFeO3複鐵式薄膜及相關物性研究
論文名稱(外文):Preparation of BiFeO3 multiferroic films by RF magnetron sputtering and structural and electrical characterizations
指導教授:齊孝定
指導教授(外文):Xiaoding Qi
學位類別:碩士
校院名稱:國立成功大學
系所名稱:材料科學及工程學系碩博士班
學門:工程學門
學類:材料工程學類
論文種類:學術論文
畢業學年度:96
語文別:中文
論文頁數:120
中文關鍵詞:濺鍍複鐵式薄膜鐵酸鉍
外文關鍵詞:sputteringBiFeO3multiferroic films
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本研究利用射頻磁控濺鍍系統製備複鐵式薄膜鐵酸鉍BiFeO3。實驗首先先在室溫下濺鍍成長BFO薄膜,然後再藉由高溫燒結的程序促使BiFeO3成相。在此過程中,吾人透過改變靶材成分、燒結溫度、持溫時間以及氧分壓的條件製備出各種BFO薄膜,並研究各試片樣品的性質,其中包含純度(雜質相)、顯微結構、表面型態以及漏電流等各方面性質。

由實驗結果發現,(1) BiFeO3相結構較易由富Bi成分之靶材濺鍍而得,(2)BFO在某些氧分壓範圍下較易成長(3)在單晶基板SrTiO3上可成長出高純度磊晶BFO薄膜。薄膜的鐵電量測皆顯示出所製備薄膜具有較大的漏電流存在,電滯迴線也由於如此而無法達到飽和的狀態,此外,實驗還發現漏電流有隨著退火溫度升高而上升的趨勢。
In this study, BiFeO3 films have been deposited by RF magnetron sputtering. The films were first sputtered at room temperature and then the BiFeO3 phase was formed after post-growth sintering at high temperature. A range of targets of varying compositions were used for the deposition of the suitable “precursor” films. The phase purity and microstructures of the sintered films were studied for different sintering temperatures and times, as well as different oxygen partial pressures. The leakage currents for the films prepared under different conditions were also examined.

We found that (1) BiFeO3 phase were easier to form in the films sputtered from the targets containing small excess of Bi, (2) the BFO structure only grew under certain oxygen partial pressures, (3) high-purity expitaxial BiFeO3 films could be grow on (001) SrTiO3 single crystal substrates under the optimum condition. The ferroelectric measurements showed that the films had large leakage currents and as a consequence, the polarization-electric field (P-E) hysteresis loops were unable to reach a saturated state. The leakage current had a tendency to increase as the annealing temperature.
摘要.......................................................I
誌謝.....................................................III
目錄......................................................IV
表目錄..................................................VIII
圖目錄....................................................IX


第 1 章 導論...............................................1
1-1 前言...................................................1
1-2 研究動機...............................................3
第 2 章 相關文獻...........................................4
2-1 鐵電材料簡介...........................................4
2-1-1鐵電材料結構特性......................................4
2-1-2鐵電材料介電與電滯曲線................................9
2-2磁性質簡介.............................................13
2-2-1 磁性原理及介紹......................................13
2-2-2 磁滯曲線............................................18
2-3 電性質簡介............................................19
2-3-1 極化機制以及頻率特性................................19
2-3-2 漏電流機制..........................................22
2-4 BFO簡介...............................................27
2-4-1 晶體結構............................................27
2-4-2 BFO電性質...........................................31
2-4-3 BFO磁性質...........................................33
第 3 章 實驗流程介紹......................................34
3-1 實驗材料..............................................34
3-1-1 製備(BFO)靶材藥品............................34
3-1-2 實驗相關藥品及用具..................................35
3-2 實驗設備..............................................36
3-2-1 陶瓷靶材製程設備....................................36
3-2-2 射頻磁控濺鍍系統(RF Magnetron sputtering system)....37
3-2-3 氣氛退火系統(Atmospheric Annealing System)..........38
3-3 實驗流程..............................................39
3-3-1 靶材製備............................................39
3-3-2 基材清潔步驟........................................42
3-3-3 退火製程............................................43
3-3-4 BFO薄膜分析.........................................44
3-4 電性基板與上電極之製作及分析..........................46
3-5 分析儀器..............................................47
3-5-1 X-ray粉末繞射儀.....................................47
3-5-2 低掠角X-ray薄膜晶體結構分析(Glancing incident
Angle XRD,GIAXRD)...............................49
3-5-3 掃瞄式電子顯微鏡(SEM)...............................50
3-5-4 α-step薄膜測厚儀...................................51
3-5-5 掃描探針顯微鏡(AFM).................................52
3-5-6 鐵電薄膜量測儀......................................53
第 4 章 結果與討論........................................54
4-1 靶材製備與分析.....................................54
4-2 薄膜材料晶體與結構分析................................57
4-2-1 不同成分比例之靶材鍍製薄膜比較......................58
4-2-2 不同薄膜厚度比較....................................64
4-2-3 不同退火氣氛比較....................................67
4-2-4 以STO基板成長BFO比較................................70
4-3 BiFeO3薄膜表面形態分析................................76
4-3-1不同退火程序比較.....................................77
4-3-2 薄膜成長時間與表面粗糙度比較........................89
4-4 BiFeO3薄膜電性分析....................................91
4-4-1 不同退火持溫時間的電性分析..........................92
4-4-2 不同退火溫度條件的電性分析..........................97
4-4-3 不同薄膜厚度的電性分析.............................101
4-4-4 不同底電極的電性比較...............................104
4-4-5 鐵電薄膜BFO應有電性分析圖..........................106
第 5 章 結論.............................................109
第 6 章 參考文獻.........................................111
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