臺灣博碩士論文加值系統

本研究利用熱蒸鍍法將Ge粉末置於950oC加熱，在氬氣氣氛中，經由Ni催化生長Ge奈米線、Ge奈米帶以及GeO2奈米線，Ni催化生長Ge奈米線和Ge奈米帶溫度是在420~500˚C，經由VSS機制top-growth mode所生成。Ge奈米線及Ge奈米帶的生長方向，分別偏好於<110>和<112>方向，以及<112>方向，表面能在決定Ge奈米結構方向生長上扮演重要的角色。在較高溫度600~660˚C則是首先經由VSS機制生長GeO2奈米線，此項結果與之前文獻報導經由VS機制生長GeO2奈米線，並無存在金屬催化劑有所不同。經由Ni催化生長Ge奈米線的生長模式，可以與合成方法和生長溫度無關。同時，Ni催化生長Ge及GeO2奈米結構的生長機制則被討論。
利用熱碳還原GeO2粉末，相同使用Ni催化生長模式，Ge和GeO2奈米結構也可被獲得。不過，生長GeO2奈米線的溫度則會被提高到720~750˚C，會比熱蒸鍍Ge粉末所生長GeO2奈米線在溫度600~660˚C來得高。

On the thermal evaporation of Ge powders at 950˚C in Ar, the growth of Ge nanowires (GeNWs), Ge nanobelts (GeNBs), and GeO2 nanowires (GeONWs) by the Ni catalyst was studied. The Ni-catalyzed growth of GeNWs and GeNBs at 420-500˚C followed the vapor-solid-solid (VSS) process with the top-growth mode. The GeNWs and GeNBs favored the <110> and <112>, and <112>growth orientations, respectively. The surface energy plays an important role in determining the growth direction of Ge nanostructures. At higher temperatures, 600~660˚C, the first VSS growth of GeONWs was observed. This result is contrary to the previous reports that the growth of GeONWs follows the vapor-solid (VS) process regardless of the presence of metal catalysts. The growth mode of Ni-catalyzed GeNWs may be independent of the synthesis method and growth temperature. Meanwhile, the growth mechanisms of Ni-catalyzed Ge and GeO2 nanostructures are discussed.
The same Ni-catalyzed growth mode of Ge and GeO2 nanostructures was also observed in the carbothermal reduction of GeO2 powders. However, the growth temperature of GeONWs raised up to 720~750˚C which are higher than that, 600~660˚C for the thermal evaporation of Ge powders.

第一章 簡介................................................................................................. 1
1.1 前言.................................................................................................. 1
1.2 奈米特性.......................................................................................... 2
1.2.1 奈米表面效應......................................................................... 2
1.2.2 量子尺寸效應......................................................................... 3
1.3 一維奈米材料.................................................................................. 3
第二章 文獻回顧.......................................................................................... 4
2.1 奈米線介紹...................................................................................... 4
2.2 奈米線合成技術.............................................................................. 5
2.3 奈米線生長機制............................................................................ 10
2.3.1 Vapor-Liquid-Solid（VLS 機制）........................................ 11
2.3.2 Vapor-Solid（VS 機制）...................................................... 12
2.3.3 Vapor-Solid-Solid（VSS 機制）.......................................... 13
2.3.4 Supercritical fluid-Solid-Solid（SFSS 機制） ..................... 14
2.3.5 Oxide-Assisted Growth（OAG 機制）................................ 15
2.4 奈米線生長模式............................................................................ 17
2.5 儀器原理........................................................................................ 19
2.6 研究動機........................................................................................ 24
第三章 實驗步驟與方法............................................................................ 26
3.1 實驗設備及過程............................................................................ 26
3.2 實驗分析儀器................................................................................ 29
第四章 結果與討論.................................................................................... 31
4.1 熱蒸鍍法生長Ge 奈米線.............................................................. 31
4.2 熱蒸鍍法生長GeO2奈米線.......................................................... 34
4.3 GeO2奈米線的Cathode – luminescence (CL)分析....................... 35
4.4 低壓條件下熱蒸鍍法生長Ge 奈米線.......................................... 36
4.5 熱碳還原法生長Ge 奈米線.......................................................... 37
4.6 熱碳還原法生長GeO2奈米線...................................................... 38
4.7 熱碳還原法生長Ge-GeOX核殻奈米線........................................ 40
第五章 結論............................................................................................... 42

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