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研究生:蔡宗勳
研究生(外文):Tsung-hsun Tsai
論文名稱:動電位陽極沉積鉍氧化物薄膜之製備及其擬電容行為
論文名稱(外文):Preparation and pseudo-capacitive properties of bismuth oxide films by potentiodynamic anodic deposition
指導教授:黃啟祥黃啟祥引用關係
指導教授(外文):Chi-hsiang Huang
學位類別:碩士
校院名稱:國立成功大學
系所名稱:材料科學及工程學系碩博士班
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2008
畢業學年度:96
語文別:中文
論文頁數:78
中文關鍵詞:超高電容器氧化鉍
外文關鍵詞:bismuth oxidesupercapacitors
相關次數:
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  • 下載下載:29
  • 收藏至我的研究室書目清單書目收藏:0
超高電容器電極材料之研發,最近深受注目,氧化鉍為可深入研究的電極材料之ㄧ。本研究旨在以動電位陽極沉積法於0.2 M硝酸鉍水溶液中製備出可做為超高電容器電極材料之氧化鉍薄膜。在電化學特性分析方面,是以循環伏安法於0.1 M Na2SO4、25℃下對氧化鉍薄膜進行擬電容行為測試及比電容值之評估。此外,對氧化鉍薄膜進行各種材料特性分析,探討其影響擬電容行為之原因。
分析結果發現,所製得之氧化鉍薄膜皆具結晶性,且具高孔隙度及樹枝狀結構之特性,於中性Na2SO4水溶液中表現出理想的擬電容行為。在沉積速率為100 mV s-1下所製得之氧化鉍薄膜,有最佳之比電容值147.1 F g-1;此氧化鉍薄膜經過1000圈的循環伏安測試後,其比電容值衰退率僅約8.3 %。實驗中並以 50 ~ 300 mV s-1不等的電位掃瞄速率進行循環伏安測試;在電位掃描速率高達300 mV s-1時,各薄膜之比電容值仍保有在50 mV s-1時的80 %左右,顯示其在長時效及高掃描速率之使用上具有良好的穩定性。
The electrode materials of supercapacitor are important research targets, recently. Bismuth oxide is one of the promising electrode materials for deeply study. This study tries to prepare the bismuth oxide films on the titanium tinsel by potentiodynamic anodic deposition to get the electrode membrane of supercapacitor. The cyclic voltammetry was used to test the pseudo-capacitive behavior and specific capacitance in 0.1 M Na2SO4 solution at 25℃. In addition, the effects of material characteristics of the bismuth oxide films on the pseudo-capacitive behavior were investigated.
  The experimental results indicated that the anodic deposits were composed of crystal bismuth oxide. More over, based on its nature of high porosity and dendrite structure, the bismuth oxide films exhibited ideal pseudo-capacitive performance in neutral Na2SO4 aqueous solution. The bismuth oxide films deposited at a scan rate of 100 mV s-1 exhibited the highest specific capacitance of 147.1 F g-1 and the decay rate of specific capacitance was only 8.3 % after 1000 cycles of cyclic voltammetry testing. This study also attempted to execute cyclic voltammetry testing at a scan rate of 50 ~ 300 mV s-1. The specific capacitance of each bismuth oxide films remained 80% at 300 mV s-1 compared with that at 50 mV s-1, showing a good stability for high scan rate and long cyclic-life.
中文摘要………………………………………………………………….…Ⅰ
英文摘要………………………………………………………………….…Ⅱ
目錄……………………………………………………………………….…Ⅲ
表目錄………………………………………………………………….……Ⅴ
圖目錄…………………………………………………………………….…Ⅵ
第一章 緒論……………………………………………………………1
第二章 理論基礎與文獻回顧…………………………………………3
2-1 儲能元件簡介…………………………..………………………..……3
2-2 超高電容器 …………………………………………………..……3
2-2-1 超高電容器之特性……………………………………………3
2-2-2 超高電容器之分類……………………………………………4
2-3 超高電容器之電極材料……………………………………………6
2-4 氧化鉍電極製備方法…………………………………………………….7
2-5 超高電容器電解液的種類…………………………….………………..10
2-6 擬電容特性之評估方式………………………………….……………...11
第三章 實驗方法及步驟…………….……………………..………………31
3-1電極材料製備………………….…………………..…………………31
3-1-1鈦箔基材前處理………………………….………………….31
3-1-2 陽極沈積錳氧化物薄膜…………………………………..……31
3-2藥品與製備氧化鉍薄膜之儀器設備……………………...………31
3-3氧化鉍薄膜電極製作流程………………...………………………32
3-4氧化鉍薄膜之性質分析…………………………………………33
3-4-1 電容特性分析…………………………………………………..33
3-4-2 晶體結構分析…………………………………………………..34
3-4-3 化學成分分析…………………………………………………..35
3-4-4 微觀組織分析…………………………………………………..35
第四章 結果與討論…………………………………………...……………41
4-1 陽極沉積氧化鉍薄膜……..………………………………………41
4-2 氧化鉍晶體結構的低掠角X-ray分析………………….……..…42
4-3 氧化鉍薄膜化學成分的XPS分析………………………….…42
4-4 氧化鉍薄膜表面的微觀組織……………………………………..…….43
4-5 氧化鉍薄膜的循環伏安行為及比電容值.………..….…..………45
4-6 氧化鉍薄膜之穩定性分析………………………………………..46
4-7 結語………………………..…………………………………...…….47
第五章 結論………………..…………….…………………………………73
參考文獻…………………………….………………………………………74
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