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研究生:林艾蓁
研究生(外文):Ai-Chen Lin
論文名稱:從液晶面板製程廢棄物中回收金屬銦之研究
論文名稱(外文):Recovery of Indium from the Processing Wastes of LCD Panels
指導教授:蔡文達蔡文達引用關係
指導教授(外文):Wen-Ta Tsai
學位類別:碩士
校院名稱:國立成功大學
系所名稱:材料科學及工程學系碩博士班
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2008
畢業學年度:96
語文別:中文
論文頁數:128
中文關鍵詞:電解還原貴金屬回收銦錫氧化物
外文關鍵詞:Recovery of nobel metalIndiumITO (Indium Tin Oxide)Electrolysis reduction
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  • 被引用被引用:8
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  • 下載下載:157
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本研究針對含有銦錫氧化物(indium-tin oxide, ITO)之製程廢料以及廢棄之LCD面板,進行回收金屬銦之技術開發研究。根據貴金屬回收技術分成浸漬溶蝕,金屬分離與回收三步驟,將含有銦離子之浸蝕液以定電位的方式將溶液中的銦離子還原在石墨電極上。以不同濃度( 1 M、2 M與4 M )鹽酸溶液浸蝕後,再調整浸蝕液的pH值進行銦與錫離子的分離,最後進行六小時定電位還原,探討施加不同電位( -0.8、-0.9、-1.0與-1.2 VSCE.)及不同pH值 ( 0.79、0與-0.43)及溶液中氯離子濃度對銦還原率的影響。
實驗結果顯示,還原率隨電位愈負而有上升趨勢,在pH值相對較高的溶液中,若含有較多的氯離子較有利於銦還原;而在氯離子濃度較低的溶液中,其還原率隨pH值增加而下降。由SEM觀察則可知在較負電位下析鍍出的鍍層顆粒較小,形成團聚狀析出物;而在較正電位下則會形成葉片狀或顆粒狀的結晶析出。根據EDS分析結果,鍍層主要成份為銦,雜質元素氧及氯隨鍍層緻密性下降而上升。
The objective of this research was to develop a technique of recovery of indium from spent ITO on the processing waste and the LCD panels. The process of recovery includes three steps, leaching, separation/purifying, and recovering. First, leaching the spent ITO by 1 M, 2 M and 4 M HCl solution and then adding NaOH and HCl to adjust the pH= 0.79, 0, -0.43, finally recovering indium from the lixivium by potentiostastic electrolysis at -0.8, -0.9, -1.0 and -1.2VSCE.. Investigation of the effect of electrolysis parameters, such as pH value, cation concentration and potential, on the percentage of recovery and the mechanism of reduction will be described in the following content.
According to the experimental results, the percentage of recovery increased with the potential decreased. In the solution with relatively higher pH value, the rate of indium reduction accelerated as the concentration of chloride ions increased. When the electrolyte contained fewer chloride ions, the higher pH value was, the larger percentage of recovery reached. Especially, when applying -1.2 VSCE. in 1 M HCl with pH=-0.43, the percentage of recovery got up to 96 %. As the SEM photographs showed, the particles with small size deposited at more negative potential in the form of cluster. On the contrary, the deposition produced at more positive potential had the shape of leaf-like and grain-like crystal. According to the analysis by EDS, the deposition principally was composed of In, and a small amount of impurities, such as O and Cl. The content of impurities varied with the morphology of deposition.
摘要 I
Abstract II
誌謝 IV
總目錄 VII
表目錄 X
圖目錄 XI
一、前言 1
二、理論基礎及文獻回顧 3
2.1 銦的性質與市場應用 3
2.1.1 銦的資源分布與特性 3
2.1.3 銦錫氧化物( indium-tin oxide,ITO )的基本性質 4
2.2 貴金屬資源化再生技術 5
2.2.1 前處理 5
2.2.2 貴金屬回收技術 5
2.2.3 貴金屬回收技術原理 6
2.2.4 銦及錫在水溶液中之pH值與電位的關係 7
2.3 濕式冶金相關技術與流程 8
2.3.1 溼式冶金之浸漬溶蝕原理 9
2.3.2 溼式冶金之金屬分離原理 9
2.3.3 溼式冶金之金屬回收原理 11
2.3.4 電解還原原理 13
三、實驗方法與步驟 26
3.1由廢液晶面板回收金屬銦 26
3.2由濺鍍槽框架上取下之銦錫氧化物粉末回收銦 27
四、結果與討論 29
4.1 鹽酸的浸漬溶蝕速率 29
4.2 銦與錫的分離 31
4.3 動電位極化曲線 31
4.4 定電位還原 34
4.4.1還原率計算 34
4.4.2定電位還原率探討 35
4.4.3電解條件對還原率影響 41
4.4.4 電解還原條件對還原率影響綜合討論 42
4.4.5 電流效率 46
4.5 鍍層表面形貌觀察與成分分析 47
4.5.1 1 M鹽酸析鍍鍍層形貌 48
4.5.2 2 M鹽酸析鍍鍍層形貌 50
4.5.3 4 M鹽酸析鍍鍍層形貌 53
4.5.4 銦鍍層形貌綜合比較 54
五.結論 124
六.參考文獻 126
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