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研究生:林其叡
研究生(外文):Qi-Rui Lin
論文名稱:多鐵性鐵酸鉍薄膜之電域結構與電域生長
論文名稱(外文):Domain structures and growth in multiferroic BiFeO3 films
指導教授:陳宜君陳宜君引用關係
指導教授(外文):Yi-Chun Chen
學位類別:碩士
校院名稱:國立成功大學
系所名稱:物理學系碩博士班
學門:自然科學學門
學類:物理學類
論文種類:學術論文
論文出版年:2008
畢業學年度:96
語文別:中文
論文頁數:69
中文關鍵詞:電域壓電力顯微鏡
外文關鍵詞:PFMDomain
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  • 被引用被引用:2
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本論文利用壓電力顯微鏡(Piezoelectric Force Microscopy, PFM)觀測多鐵性鐵酸鉍(BiFeO3, BFO)薄膜在奈米尺度下的電域結構與電域成長。可同時觀察樣品的表面形貌、水平(In-Plane, IP)與垂直(Out-of Plane, OP)方向之電域。對多晶與磊晶薄膜進行量測,顯示晶界上有較高的空間電荷(Space Charge),此空間電荷在微觀中能有效減少束縛電荷所造成的去極化能,此發現提供BFO薄膜中電域大於理論尺寸的解釋。其IP-PFM與OP-PFM觀測到的條紋狀電域,應為考量鐵電有序、磁電耦合與去極化能後,其本質傾向的穩定分佈狀態。對晶軸方向(111)的磊晶BFO薄膜動態量測結果顯示,在外加電壓較小的情形下,其域壁(Domain Wall)為非線性的緩慢爬行移動(Creep Motion)。在外加電壓接近飽和電壓的情形下,域壁擴散則達平衡狀態,受能量項影響包含(1)域壁上束縛電荷所造成的退極化能;(2)域壁的表面能;(3)探針與薄膜表面之靜電能。滿足影響電域的能量總和達到最小值時即為電域穩定的平衡尺寸。計算其反向脈衝的位準電場(0.81~0.91 MV/cm)略小於正向脈衝的位準電場(1.71~1.93 MV/cm),與其本身的自發極化皆為垂直向下吻合。
In this study, I observe the domain structure and growth at nanoscale by the piezoresponse force microscopy (PFM) in the multiferroic BiFeO3 thin films. The topography, in-plane (IP) and out-of-plane (OP) components of domains for BFO thin films can be revealed simultaneously. The effects of free carriers exist at grain boundaries, where free carries are assumed to screen the depolarization fields in rough epitaxial and polycrystalline samples. The effect of free carriers also provide the explanations for that BFO ferroelectric domains are usually larger than theory expected. The stripe-like domains formed as normal states by considering ferroelectric ordering, magnetoelectric coupling, and the depolarization energy. When applying lower voltage pulses, the domain grows logarithmically with time, which suggests the observed domain wall follows the creep motion in (111) epitaxial sample. When applying higher voltage pulses (close to the macroscopically saturation voltage), the observed states are in equilibrium so that the domain size is determined by minimizing the domain free energies, which include the contributions from (1) the depolarization energy from the bound charges on the domain wall; (2) the surface energy of the domain wall and (3) interaction energy between the domain and the tip fields. The threshold electric field of nonequlibrium creep wall for negative bias (~0.81-0.91 MV/cm) is smaller than that (~1.71-1.93 MV/cm) for positive bias. It is reasonable since the original polarizations of the films tend to direct toward the bottom electrodes.
摘要 I
ABSTRACT II
目錄 III
表目錄 V
圖目錄 VI
摘要 I
ABSTRACT II
目錄 III
表目錄 V
圖目錄 VI







第一章 緒論 1
第二章 文獻回顧 3
2.1多鐵性材料 3
2.1.1 多鐵性簡介 3
2.1.2 基礎理論 6
2.2鐵電性基礎理論 [31-38] 8
2.3鐵酸鉍材料 14
2.3.1 鐵酸鉍之基本性質 14
2.3.2鐵酸鉍電域文獻回顧 16
2.4 掃描式探針顯微鏡的電域動態研究 22
第三章 實驗原理與方法 25
3.1 掃描式探針顯微術 25
3.1.1 掃描式探針顯微鏡 25
3.1.2 原子力顯微鏡 28
3.1.3 壓電力顯微鏡 32
3.2 實驗量測方法 35
第四章 結果與討論 36
4.1 磊晶與多晶鐵酸鉍薄膜電域結構分析 37
4.1.1磊晶(001)鐵酸鉍薄膜表面形貌對電域結構之影響 38
4.1.2多晶(001)鐵酸鉍薄膜的電域特性 41
4.2晶軸方向(111)磊晶鐵酸鉍薄膜中電域動態行為 47
4.2.1 不同正向脈衝時間對域壁移動之影響 48
4.2.2不同正向脈衝電壓對域壁移動之影響 52
4.2.3不同反向脈衝對域壁之影響 55
4.2.4動態量測與宏觀電性結果比較 62
第五章 結論 64
參考文獻 66
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