在本論文中，砷化銦鎵/砷化鎵光檢測器是由金屬有機化學氣相沉積法成長。首先，我們製做了垂直入射型的光檢測器，並且量測元件的光響應值跟量子效率，量測出來的結果，得到較低的光響應值跟量子效率，這表示在吸收效率上，並沒有很理想，為了改善這些缺點，我們製做邊射型的光檢測器，我們發現，邊射型的光檢測器可以在不改變磊晶結構的條件下，而可以在光響應值跟量子效率上，得到至少十倍的改善。
我們在砷化銦鎵中，掺入少量的氮，達到波長1.3微米。同樣地，在不改變磊晶結構的前提下，藉由製做邊射型光檢測器，可以得到較好的光響應值跟量子效率。最後，我們可以藉由掺入銻來改善我們的磊晶結構，降低光檢測器的暗電流。

In this thesis, InGaAs/GaAs-based photodetectors are grown by metal organic vapor phase epitaxy (MOVPE). First, vertically-incident photodetectors are formed, but with low responsivity and quantum efficiency. In order to improve their performances without changing the epitaxial structures, the edge-coupled photodetectors were fabricated for comparison. The responsivity of edge-coupled photodetectors was achieved with more than 10 times of improvement compared to conventional vertically-incident photodetectors.
To achieve 1.3um photodetection, nitrogen was incorporated into InGaAs to extend absorption wavelength to the desired target. Similarly, The responsivity and quantum efficiency of edge-coupled photodetectors were also improved without changing the epitaxial structures. Finally, an improvement in the quality of epitaxial photodetector structures could be realized through additional antimony incorporation, where a reduction in the dark current was noted.

Contents
Abstract (In Chinese) .................................................................................. I
Abstract (In English) .................................................................................. II
Acknowledgements .................................................................................... IV
Contents ....................................................................................................... V
Table Captions ........................................................................................ VIII
Figure Captions ......................................................................................... IX

Chapter 1 Introduction .................................................................... 1
1-1 Introduction ..................................................................... 2
1-2 Long Wavelength GaAs-based Photodetectors ............... 5
1-3 Organization of the Thesis .............................................. 8

Chapter 2 Background Theory ...................................................... 9
2-1 Theoretic Foundation of the Photodetectors .............. 10
2-1-1 Mechanism of the Current Transport for Junction Photodetectors................................................................ 10
2-1-2 Mechanisms of p-i-n Photodetectors ............................ 12
2-1-3 Theory of Edge-Coupled Photodetectors ...................... 14
2-2 Theoretical Analysis of p-i-n Photodetectors ............... 16
2-2-1 Dark Current ................................................................. 16
2-2-2 Responsivity and Quantum Efficiency ......................... 21
2-2-3 Junction Breakdown Voltage ........................................ 22
2-3 Metal Organic Vapor Phase Epitaxy Growth System ... 25
2-3-1 Kinetically Limited Region ........................................... 29
2-3-2 Thermodynamically Limited Region ............................ 30
2-3-3 Mass Transport Limited Region ................................... 30
2-4 Measurement System .................................................... 31
2-4-1 Current-Voltage Measurement System ......................... 31
2-4-2 Vertically-Incident Responsivity Measurement System ........................................................................... 32
2-4-3 Edge-Coupled Responsivity Measurement System ...... 33

Chapter 3 Vertically-Incident and Edge-Coupled InGaAs/GaAs MQW p-i-n Photodetectors ........................................ 34
3-1 InGaAs/GaAs MQW p-i-n Structures ........................... 35
3-2 Fabrication Process ....................................................... 36
3-2-1 Vertically-Incident Photodetectors ............................... 36
3-2-2 Edge-Coupled Photodetectors ....................................... 39
3-3 Comparison of Vertically-Incident and Edge-Coupled InGaAs/GaAs MQW p-i-n Photodetectors ................... 43
3-4 Comparison of Different Periods of InGaAs/GaAs MQW p-i-n Photodetectors ...................................................... 52
3-5 Summary ....................................................................... 64

Chapter 4 1.3�慆 InGaAsN/GaAs MQW p-i-n Photodetectors . 65
4-1 InGaAsN/GaAs MQW p-i-n Structures ........................ 66
4-2 Comparison of Vertically-Incident and Edge-Coupled InGaAsN/GaAs MQW p-i-n Photodetectors ................ 67
4-3 Improvement of Responsivity by Antimony Incorporation ................................................................. 75
4-4 Summary ....................................................................... 81
Chapter 5 Conclusions and Future Work ................................... 82
5-1 Conclusions ................................................................... 83
5-2 Future Work .................................................................. 85

References .................................................................................................. 87

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