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研究生:李景弘
研究生(外文):Jing-Hong Li
論文名稱:藉由透明氧化物層對GaN基LED光取出改善之研究
論文名稱(外文):Investigation on the light extraction improvement of GaN-based LED by transparent conductive oxide layer
指導教授:洪茂峰洪茂峰引用關係
指導教授(外文):Mau-Phon Houng
學位類別:碩士
校院名稱:國立成功大學
系所名稱:微電子工程研究所碩博士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2008
畢業學年度:96
語文別:中文
論文頁數:72
中文關鍵詞:發光二極體氧化銦錫表面黏著氧化鋅鋁
外文關鍵詞:SMDLight emitting diodes (LEDs)ITOAZO
相關次數:
  • 被引用被引用:1
  • 點閱點閱:226
  • 評分評分:
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0
為了要增加光輸出功率,我們使用三種不同電流擴散層,薄的雙層金屬鎳金、氧化鋅鋁和銦錫氧化物, Sputter成長ITO和AZO以及E-GUN成長ITO,最低電阻率都能達到2×10-4Ω-cm。將這四種薄膜分別鍍在玻璃上,再以U-4100 Spectrophotometer來量測穿透率;鎳金、氧化鋅鋁和銦錫氧化物的穿透率在波長456nm分別為53%、74%、68.7%(Sputter)和90.2%(E-Gun)。因此選擇E-Gun所成長的銦錫氧化物來做為元件的電流擴散層,由於銦錫氧化物對於P-GaN無法形成良好的歐姆接觸,於是選用高功函數的鎳金屬來形成歐姆接觸,利用傳輸線模型(TLM)分析,我們可以找出Ni/Au和Ni/ITO在P-GaN歐姆接觸的最佳製程參數。
我們將藍光晶粒以SMD(表面黏著)的方式進行封裝,晶粒放置於鍍銀的基座上,杯面為120゚夾角,使用折射係數為1.5的矽膠封裝,導致低的臨界角損失和Fresnel損失。
In order to increase output power, we used three differentt kinds of current spreading layer ,thin bilayer metal Ni/Au, AZO and ITO. ITO and AZO were deposied by sputter and ITO was growed by E-Gun, their lowest resistance could all reach about 2×10-4Ω-cm2. We deposited the four thin films on glass and measure the transmittance by U-4100 Spectrophotometer. The transmittance of Ni/Au, AZO and ITO at wavelength 456nm are about 53%、74% 、68.7% (Sputter) and 90.2% (E-Gun). So we choose ITO deposited by E-Gun as our device's current spreading layer. Owing to ITO can't form good ohmic contact on P-GaN, we use high work function metal nickel to form ohmic contact. Taking advantage of transmission-line-model to analyze, we could find the best process parameter of ohmic contact on P typed GaN for Ni/Au and ITO.
We took the LED die to be packaged by SMD mode. Dies were attached on substrate electroplated silver. And the cup face’s angle is 120゚. We used organic silicon resin whose refractive index is 1.5 to encapsulate results in low critical angle loss and Fresnel loss.
摘要 I
Abstract II
誌 謝 IV
表目錄: VII
圖目錄 VIII
第一章 緒論 1
1.1 研究背景 1
1.2 研究動機 2
第二章:背景理論 4
2.1 發光二極體基本原理 4
2.2 濺鍍原理 5
2.3 透明電流傳導層 8
2.3.1 鎳金 8
2.3.2 氧化銦錫(indium tin oxide, ITO) 8
2.3.3 氧化鋅鋁(ZnO:Al) 13
2.4 霍爾效應量測原理 13
2.5 傳輸線模型理論 15
第三章 基本製程實驗 18
3.1 蝕刻製程 18
3.1.1 濕式蝕刻 18
3.1.2 乾式蝕刻 19
3.2 濺鍍製程 26
3.3 微影製程 27
3.4 蒸鍍製程 28
3.5 退火 29
第四章 氮化鎵發光二極體製程 30
4.1 不同擺放位置對ITO與AZO薄膜電性的影響 30
4.1.1 E-GUN成長ITO薄膜 31
4.1.2 ITO與AZO電阻率和穿透率討論: 32
4.2 TLM 量測元件製作 32
4.2.1 Ni/Au歐姆接觸 32
4.2.2 ITO/P-GaN 歐姆接觸 32
4.3 LED 元件製作 33
4.3.1 傳統鎳金導電層LED製作 33
4.3.2 ITO-LED元件製作 36
4.4 LED元件量測 37
第五章 表面黏著封裝(SMD) 38
5.1 封裝介紹 38
5.2 SMD封裝製程 39
5.3 SMD封裝量測 40
第六章 結論與未來展望 41
參考文獻 42
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