在本論文中，我們以分子束磊晶法成長及研製砷化銦鋁/砷化銦鎵/砷化鎵變晶性高電子移動率電晶體。由於許多研究指出高能量的物理真空鍍膜技術容易對元件造成熱破壞，使得費米能階幾乎釘在某一定值，蕭特基能障高度也相對較低，並且不會隨著不同金屬功函數變動。為了改善費米能階釘住效應對元件的影響，我們於本論文中使用無電鍍法沉積閘極金屬，以期獲得良好的蕭特基接面。
為了探討無電鍍金屬膜對元件所造成的影響，我們對薄膜的各種特性做分析和測試，包含表面粗度分析，晶粒大小、厚度、電阻率量測，以及退火和附著力的測試。
最後，比較無電鍍與傳統熱蒸鍍之元件電性，包含直流和微波特性。在室溫下，無電鍍元件展現良好的直流特性，但隨著溫度由300K 升至420K 時，其退化率相對明顯，此外熱蒸鍍元件在微波的表現上，仍然是比較佔有優勢。

In this thesis, InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors (MHEMTs) grown by molecular beam epitaxy (MBE) system have been fabricated and investigated. Some reports have illustrated that high energy physical vacuum depositions easily cause the thermal damage. Fermi-level is almost pinned at constant value instead of varied with different metal work functions. Result in lower Schottky barrier height of the devices. In order to eliminate Fermi-level pinning effect, electroless plated technology is employed to deposit gate metal to obtain well-behaved Schottky contact interface.
In order to investigate how electroless plated metal film influent the device, some tests and analysis to the metal film are demonstrated, including surface roughness analysis, grain size, thickness and resistivity measurement, and annealing and adhesion tests.
Finally, the characteristics of the devices with electroless plating and conventional thermal evaporation, including DC and microwave performance are compared. At room temperature, the device with electroless plating exhibits better DC performance but apparent temperature degradation rate with temperature increasing from 300K to 420K. In addition, the device with thermal evaporation still exhibits superior microwave performance.

Abstract
Table Captions
Figure Captions
Chapter 1 Introduction...................................1
Chapter 2 Process and Analysis of Electroless Plated Technology on InAlAs/InGaAs/GaAs Metamorphic High Electron Mobility Transistors (MHEMTs)
2-1. Introduction.........................................5
2-2. Electroless Plating Operation Processes..............6
2-3. Electroless Plated Pd film analysis..................8
2-3-1. Grain size.........................................8
2-3-2. Surface roughness..................................8
2-3-3. Thickness..........................................9
2-3-4. Resistivity ........................................9
2-3-5. Annealing test.....................................9
2-3-6. Adhesion test.....................................10
2-4. Conclusion..........................................11
Chapter 3 InAlAs/InGaAs/GaAs Metamorphic High Electron Mobility Transistor (MHEMT) with Electroless Plated Pd-Gate
3-1. Introduction........................................12
3-2. Device Fabrication..................................13
3-3. Experimental Results and Discussion.................15
3-3-1. DC Performance....................................15
3-3-2. Microwave Characteristics.........................18
3-4. Summary.............................................19
Chapter 4 Comparative Studies of the Device Properties of InAlAs/InGaAs/GaAs Metamorphic High Electron Mobility Transistors (MHEMTs) with Electroless Plated and Thermal Evaporated Pd-Gates
4-1. Introduction........................................20
4-2. Device Fabrication..................................21
4-3. Experimental Results and Discussion.................22
4-3-1. DC Performance....................................22
4-3-2. Microwave Characteristics.........................26
4-4. Summary.............................................27
Chapter 5 Conclusion and Prospect
5-1. Conclusion..........................................29
5-2. Prospect............................................30

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