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研究生(外文):Feng-Renn Juang
論文名稱(外文):Characterization and Preparation of Single-Crystalline Silicon Carbide Thin Film on Porous-Si Substrates with Multi-Porosity for Photodetecting Applications
指導教授(外文):Soon-Jyh ChangYean-Kuen Fang
外文關鍵詞:multi-porosityporous siliconphotodetectingsilicon carbide
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本論文中描述於N型(111) 矽基板上調變不同蝕刻參數形成複層孔隙率(multi-porosity)多孔矽基板,利用多孔矽結構來增加光線吸收面積與偏移吸收峰值等特性,發展光感測元件。其中多孔矽層是以電化學陽極化蝕刻法(electrochemical anodization method) 製作而成,於其上再以快速升溫化學氣相沉積系統(RTCVD) 成長單晶碳化矽薄膜。利用碳化矽╱多孔矽結構製作的垂直式PN接面二極體其主要吸收層在於多孔矽層,具有0.41A/W之響應度、60.22%之量子效率,常溫6.5mW/cm2螢光燈照射下其光暗電流增益值為393.83,與傳統碳化矽╱單晶矽結構相較提升近4倍。此外,碳化矽MSM(metal-semiconductor-metal)結構光感測元件則因多孔矽層的高電阻值絕緣特性,使主要吸收層落在碳化矽薄膜,具有0.20A/W之響應度,量子效率為44.62%。實驗結果驗證成長於複層孔隙率多孔矽基板上的碳化矽╱多孔矽元件,具有較佳的光感測特性與靈敏度,因此更適合應用於元件的製作與發展。
In this thesis, we used various etching conditions to develop PS (porous-Si) substrates with multi-porosity. The PS structure can increase photo-absorbing area, and shift the peak of the main absorbing wavelength, thus improving the flexibility for designing a photo-detecting device. The PS layers were formed on the silicon substrates pre-etched using the electrochemical anodization method. Then deposited theβ-SiC film on the top of the PS layer by a RTCVD system to form vertical type PN junction and metal-semiconductor-metal (MSM) photodiodes . For the PN junction diode, the main absorbing region is located on the PS layers. The diode exhibits a responsivity of 0.41A/W and 60.22% quantum efficiency. Under room temperature, and irradiation of 6.5mW/cm2 fluorescent lamp, the diode has a photo to dark current ratio of 393.83.Which is nearly 4 times compared to the counterpart with SiC/c-Si structure. While in the MSM structure photodiode, due to the high resistance of the PS layers, the SiC film becomes the main absorbing layers, and has a responsivity of 0.20A/W and 44.62% quantum efficiency. The results indicate the SiC films deposited on the PS with multi-porosity, have better properties for developing high performance photo-detecting device.
中文摘要 I
英文摘要 II
目錄 IV
圖表目錄 VI

第一章 前言 1
第二章 成長系統與量測儀器介紹 4
2-1 矽基板之清洗(Wafer Clean) 4
2-2 快速升溫化學氣相沈積系統(RTCVD) 5
2-3 真空蒸著系統(Thermal Vacuum Evaporation System) 7
2-4 退火系統(Anneal System) 8
2-5 量測儀器 8
2-5-1 場發射掃瞄式電子顯微鏡(Field Emission Scanning Electron Microscope, FESEM) 8
2-5-2 X光繞射儀(X-ray Diffractometer, XRD) 9
2-5-3 原子力顯微鏡(Atomic Force Microscope, AFM) 9
2-5-4 膜厚量測儀(α-Step) 10
2-5-5 光譜響應(Photo Response, PR) 10
第三章 多孔矽的機制及製備方法 11
3-1 多孔矽之簡介及形成機制 11
3-2 多孔矽之量子模型 12
3-3 多孔矽之蝕刻參數 13
3-4 多孔矽之蝕刻設備 15
3-5 複層孔隙率多孔矽之製備 17
第四章 複層孔隙率多孔矽基板上成長碳化矽薄膜之特性研究 19
4-1 相關背景介紹 19
4-2 碳化矽薄膜之成長 20
4-3 碳化矽薄膜表面SEM分析 21
4-4 碳化矽薄膜EDX成分分析 22
4-5 碳化矽薄膜XRD分析 22
4-6 碳化矽薄膜AFM分析 23
第五章 碳化矽╱多孔矽垂直式PN接面二極體光感測元件 24
5-1 元件工作原理 24
5-2 元件構造與製作流程 26
5-3 元件特性分析 27
第六章 碳化矽MSM結構光感測元件 31
6-1 元件工作原理 31
6-2 元件構造與製作流程 32
6-3 元件特性分析 33
第七章 結論與未來展望 35
參考文獻 37
附表 40
附圖 42
誌謝 82
自述 84
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