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研究生:黃國瑋
研究生(外文):Guo-wei Huang
論文名稱:熱處理條件對氧化鉿與矽酸鉿薄膜特性的影響
論文名稱(外文):Effects of Thermal Treatments on Properties of Hafnium Oxide and Hafnium Silicates Thin Films
指導教授:呂正傑施權峰施權峰引用關係
指導教授(外文):Ching-Chich LeuChuan-Feng Shih
學位類別:碩士
校院名稱:國立成功大學
系所名稱:電機工程學系碩博士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2008
畢業學年度:96
語文別:中文
論文頁數:100
中文關鍵詞:熱處理氧化鉿矽酸鉿
外文關鍵詞:Hafnium SilicatesHafnium OxideThermal Treatments
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  • 被引用被引用:4
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本論文研究分成兩部分,第一部分探討以HfO2作為MIS結構中的絕緣氧化層,使用爐管(Furnace)及快速退火爐(RTA)作退火。由實驗結果可知,無論是以爐管還是RTA作退火,若退火溫度提升,薄膜的結晶性會較好,介電常數值(κ)提高,並降低氧化層中的缺陷,減少VFB的偏移量,而漏電流並無明顯的變化。而若HfO2製程時的氧壓比例提升,退火後結晶性會變好,介電常數值提高而漏電流降低,對VFB則無太大的影響。與爐管退火相比較,HfO2薄膜以RTA作退火有較好的結晶性、較低的漏電流、VFB偏移量少以及較高的介電常數。
第二部分探討以HfxSi1-xO2作為MIS結構中的絕緣氧化層。電子能譜儀(HRXPS)分析中發現,退火溫度愈高Hf 4f軌域之訊號峰會往鍵結能高處偏移。除了H20S80外,其它成分之漏電流密度隨退火溫度上升而下降,VFB的偏移量則隨退火溫度上升而減少。當矽酸鉿中矽原子比(Si/(Hf+Si))增加時,HRXPS分析中Hf4f、Si2p、O1s三軌域之訊號峰會往鍵結能高處偏移。在矽原子比(Si/(Hf+Si))為30%~70%之間,漏電流大小則是隨矽原子比例上升而下降。當矽酸鉿成分為H30S70時,有比其他成分的漏電流最低,VFB的偏移量亦是成分條件中最小的。
The first part of this thesis is to investigate the property of MIS structure by employing a sputtered HfO2 as the insulating layer. The high temperature annealed specimens, regardless of anneal method (Furnace or RTA), had better crystallization of HfO2, higher dielectric constant value (κ), less defects and flatband voltage (VFB)shift, but high annealing temperature did little influence on leakage current density. The HfO2, deposited with high oxygen ratio, exhibited better crystallization, higher dielectric constant value (κ) and less leakage current. But oxygen ratio did little influence on VFB value. As compared with furnace annealing, the HfO2 with RTA process had better crystallization, lower leakage current, less VFB shift and higher dielectric constant.
The second part is to investigate the property of hafnium silicates(HfxSi1-xO2) as used as an insulating layer in a MIS structure. By increasing the annealing temperature, the Hf 4f signals shifted to higher binding energy. The high temperature annealed specimens exhibited relatively low leakage current and less VFB shift, excluded the H20S80. Furthermore, ,the Hf 4f, Si 2p and O 1s signals shift to higher binding energy as the SiO2 fraction increased. As the SiO2 fraction of hafnium silicates was within 30% - 70%, the leakage current reduced. It was observed that H30S70 exhibited the least leakage current and VFB shift among all the specimens.
摘要 I
Abstract II
誌謝 III
目錄 V
表目錄 VIII
圖目錄 IX
第一章 序論 1
1-1 前言 1
1-2 實驗目的 1
1-3 論文架構 1
第二章 材料介紹與理論基礎 3
2-1 MOSFET 閘極高介電材料 3
2-1-1 MOS 尺寸的發展 3
2-1-2 高介電材料的興起 3
2-1-3 高介電材料的選擇 4
2-1-4 高介電材料的種類 5
2-1-5高介電材料HfO2特性 6
2-2 MIS基礎理論 7
2-2-1 MIS結構 7
2-2-2 理想MOS二極體C-V特性 7
2-2-3 影響理想MOS二極體C-V特性的因素 9
2-2-4氧化層缺陷對電滯曲線方向的影響 11
2-3 高介電記憶體 12
2-3-1 記憶體的發展 12
2-3-2 高介電材料的引入 13
2-3-3 矽酸鉿特性 (Hafnium Silicates) 13
2-3-4 相分離機制 14
2-3-5 解離分解(Spinodal Decomposition) 15
第三章 實驗程序 32
3-1 實驗簡介 32
3-1-1 矽基板之準備 32
3-1-2 矽基板表面清洗 32
3-1-3 絕緣氧化層製備 34
3-1-4 絕緣氧化層之退火 35
3-1-5 電極製備及電極後退火 35
3-2 試片代號 36
3-3 氧化層材料之特性分析及量測 38
3-3-1掃描式電子顯微鏡(SEM) 38
3-3-2穿透式電子顯微鏡(TEM) 38
3-3-3橢圓偏光儀(Ellipsometer) 39
3-3-4 X光光電子能譜儀(HRXPS, ESCA) 39
3-3-5 X光繞射儀(XRD) 40
3-3-6 IV及CV特性量測 40
第四章 結果與討論 46
4-0 HfO2之厚度量測 46
4-1 HfO2以爐管(Furnace)退火 47
4-1-1 HfO2結晶特性分析 47
4-1-2 電性量測與分析 - 漏電流特性(I-V) 47
4-1-3 電性量測與分析 – 電容電壓特性(C-V)討論 48
4-1-4 結論 50
4-2 HfO2以快速退火爐(RTA)退火 50
4-2-1 HfO2結晶特性分析 50
4-2-2 電性量測與分析 - 漏電流特性(I-V) 51
4-2-3 電性量測與分析 – 電容電壓特性(C-V)討論 51
4-2-4 結論 52
4-3 爐管(Furnace)與快速退火爐(RTA)退火比較 53
4-3-1 結晶特性的比較 53
4-3-2電性的比較 53
4-3-3結論 53
4-4 矽酸鉿(HfxSi1-xO2)作為氧化層之研究 54
4-4-1 矽酸鉿(HfxSi1-xO2)薄膜之厚度量測以及成分測定 54
4-4-2 矽酸鉿(HfxSi1-xO2)薄膜材料特性討論 54
4-4-3 矽酸鉿(HfxSi1-xO2)薄膜材料電性討論 56
4-5 結論 56
4-5-1 二氧化鉿(HfO2)作為氧化層 56
4-5-2 矽酸鉿(HfxSi1-xO2)作為氧化層 57
第五章 結論 94
5-1 HfO2作為MIS結構的絕緣氧化層材料 94
5-1-1 以爐管(Furnace)作退火 94
5-1-2 以快速退火爐(RTA)作退火 94
5-1-3 以爐管(Furnace)與快速退火爐(RTA)作退火的比較 95
5-1-4 綜合比較 95
5-2 矽酸鉿(HfxSi1-xO2)作為MIS結構的絕緣氧化層材料 95
參考文獻 97
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