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研究生:廖宜瑨
研究生(外文):Yi-Cheng Liao
論文名稱:利用噴墨列印技術製作聚(3-己基噻吩)為主動層之有機薄膜電晶體
論文名稱(外文):Poly(3-hexylthiophene)-based organic thin film transistors fabricated by inkjet printing technology
指導教授:周維揚周維揚引用關係
指導教授(外文):Wei-Yang Chou
學位類別:碩士
校院名稱:國立成功大學
系所名稱:光電科學與工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2008
畢業學年度:96
語文別:中文
論文頁數:91
中文關鍵詞:聚脲酯聚3-己基噻吩噴墨列印技術有機薄膜電晶體
外文關鍵詞:inject-printingorganic thin-film transistorspolyurethanepoly-(3-hexythiophene)PEDOT:PSS
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高分子有機半導體Regioregular Poly(3-hexythiophene),簡稱RR-P3HT(高度立體規則度聚(3-己烷基噻吩))是目前常用的有機薄膜半導體材料。高分子有機半導體可利用旋轉塗佈或噴墨列印之方式形成薄膜,噴印製程比旋轉塗佈製程,在成膜時能讓高分子有機半導體有較長的時間排列分子,形成較好的結構,而獲得較佳之電特性表現,因此本實驗以RR-P3HT為基礎,研究以噴印的方式製作有機薄膜電晶體,並嘗試改善元件結構,以提升元件之工作效率。
提升有機高分子工作效能為實驗第一部份,改善高分子半導體與絕緣層接面之接觸狀況(morphology),利用水性聚脲酯(Polyurethane, PU)作為半導體與絕緣層接面之修飾層 (modification layer),PU提供P3HT分子成膜時較佳排列效果,進而改善元件電特性。本實驗嘗試多種厚度的PU參數,且在PU厚度3300 Å得到最佳化的元件性能。並改變半導體層P3HT濃度,以及不同寬長比之研究,由實驗結果發現P3HT溶液濃度之提高有效的改善元件電特性參數,而寬長比則沒有在特定參數會有顯著的變化。又研究在PU薄膜上以不同瓦數氧電漿進行處理,藉以改變表面的能量,實驗結果指出此方法可以用來控制元件的起始電壓。
實驗的第二部份以製作全噴墨製程的有機薄膜電晶體為目標,將元件的源極與汲極之Au/Al金屬電極改以PEDOT:PSS溶液來代替。由實驗結果發現使用PEDOT:PSS溶液當電極的元件電特性會不如使用Au/Al金屬當電極的元件。進一步探討原因,藉由四點探針、表面能及接觸電阻的實驗發現,因為其極性的差異、接觸及通道電阻過大,並且傳導率不佳,導致利用PEDOT:PSS溶液當電極的元件電特性會有所下降。
Inkjet-printed regioregular poly-(3-hexythiophene) (RR-P3HT) was used in this research to fabricate organic thin film transistors (OTFTs). The inkjet-printing method has an advantage of longer assembly time than spin-coating method for forming RR-P3HT films to achieve better performance of OTFTs. In the first section, the inkjet-printed P3HT-based OTFT with polyurethane (PU) as modification layer shows higher ordering P3HT film than that spinning directly on SiO2 gate-dielectric. The processing parameters, including the thickness of PU layer, the concentration of P3HT, and the channel length of OTFTs, had been optimized in this study. Interestingly, the threshold voltages of OTFT devices could be controlled by the surface energy of the PU films processed under various doses of O2-plasma. In the second part, an electrically conducting polymer blend poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate), PEDOT-PSS, was used to replace the metal electrodes in the OTFTs in order to form an all organic thin film transistor. However, a high contact resistance existed between the P3HT and PEDOT-PSS films. The extraction of the contact resistance using a gate-transfer length method preformed on a series of devices with channel length ranging from 400 to 800 μm and a fixed channel width of 2000 μm. Moreover, the surface polarities of P3HT and PEDOT-PSS could not match to each other; therefore, no all organic transistors can be achieved in this thesis.
中文摘要 I
Abstract III
誌謝 V
目錄 VII
表目錄 XI
圖目錄 XII
第1章 緒論 1
1.1 有機半導體(organic semiconductor) 1
1.2 水性光學塑膠材料 2
1.3 有機薄膜電晶體(Organic thin-film transistors, OTFTs) 3
1.3.1 元件結構 3
1.3.2 原理 4
1.3.3 描述有機薄膜電晶體電特性的基本公式 6
1.4 研究目的 8
第2章 P3HT有機薄膜電晶體元件設計 17
2.1 前言 17
2.2 實驗方法 17
2.2.1 有機材料 17
2.2.2 樣品設計 18
2.2.3 樣品製作 20
2.3 實驗儀器 20
第3章 探討介電層及半導體層對於有機薄膜電晶體元件的影響 37
3.1 前言 37
3.2 元件製作 37
3.3 電性分析 38
3.3.1 不同濃度絕緣層的影響 38
3.3.2 不同濃度主動層在不同通道比之下的影響 42
3.4 在修飾層上面以不同瓦數氧電漿處理對電性的影響 43
3.4.1 元件製作 44
3.4.2 電性分析 45
第4章 利用噴墨技術製作半導體元件 62
4.1 前言 62
4.2 元件製作 62
4.3 電性分析 63
4.4 不同的電極對於元件的影響 66
4.4.1 表面能 66
4.4.2 接觸電組與通道電阻[40-42] 68
第5章 結論與未來展望 83
5.1 結論 83
5.2 未來展望 85
參考文獻 86
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