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研究生:林美妏
研究生(外文):Mei-Wen Lin
論文名稱:以濺鍍在軟質基材之氧化鋅摻鋁(ZnO:Al)透導膜作為有機發光二極體(PLED)陽極之研究
論文名稱(外文):Investigation on the Performance of PLED with ZnO:Al Anode Deposited on Soft Polymer Substrate
指導教授:李玉華李玉華引用關係
指導教授(外文):Yu-Hua Lee
學位類別:碩士
校院名稱:國立成功大學
系所名稱:光電科學與工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2008
畢業學年度:96
語文別:中文
論文頁數:120
中文關鍵詞:氧化鋅射頻磁控濺鍍軟性基板有機發光二極體
外文關鍵詞:ZnORF magnetron co-sputteringPLEDpolymer substrates
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本實驗利用雙靶源射頻磁控濺鍍系統在軟性塑膠基板上沉積摻鋁氧化鋅(ZnO:Al,AZO)薄膜,並且探討AZO透明導電膜的微觀結構、組成成分,電性及光學特性;本實驗分為三大部分,第一部分:使用PC基板在室溫下製作AZO薄膜,透過改變鋁靶的射頻功率(PAl=0~35 W)來控制薄膜中鋁的摻雜含量,並且研究AZO薄膜的物理性質變化;第二部分:PC基板加溫200 ℃下製作薄膜,同樣探討改變鋁靶功率後薄膜之物理性質的改變;第三部分:選取PI及PET兩種軟性基板來探討基板對於薄膜物理性質的影響。
最後,將樣品薄膜作為高分子發光二極體(PLED)之陽極,元件的組成結構分別為:PEDOT:PSS做為電洞傳輸層,PF做為發光層,Ca/Al做為陰極,並研究元件的光電特性。
研究結果顯示,室溫下所製備的AZO薄膜,在鋁靶功率為25 W時,可得一導電性良好(ρ=7.75×10-4 Ω-cm)與穿透率為89 %之透明導電膜,應用在PLED元件上可得此系列最佳整流比410.3;另外,基板加溫200 ℃所製備的AZO薄膜,同樣在鋁靶功率為25 W時,可得導電性良好(ρ=7.63×10-4 Ω-cm)與穿透率為91 %之透明導電膜,而在PLED元件應用上,當順偏壓為10.7 V時獲得最高亮度為4143 cd/m2;最後,AZO薄膜的物理性質並不會受到軟性基板的不同而發生變化。
The Aluminum-doped zinc oxide (ZnO:Al, AZO) thin films were deposited on soft polymer substrates with a RF magnetron co-sputtering method. In this research, we divide them into three parts to study. The First part: AZO thin films were deposited on PC substrates at room temperature, and the Al content was controlled by varying Al RF power (PAl=0~35 W), we investigated the influence of Al contents on the structure, composition, electrical and optical properties of AZO films. The second part: same as the previous part we investigated the physical properties of AZO thin films deposited in different Al content, however, with PC substrates measured in 200 ℃. The third part: we chose PI and PET as the soft substrates, and investigated substrates influence on physical properties of AZO thin films.
The AZO films then were used for the anode contact of PLED devices. The PLED devices structure consisted of a hole transport layer (HTL) was PEDOT:PSS, an emitting layer (EML) was PF. The cathode contact deposited on top of the EML was a bi-layer consisting of Ca and Al layer. The electro-luminescence performances of the devices were studied.
The AZO thin film, which was prepared at room temperature at PAl= 25 W, present the lowest resistivity (ρ=7.75×10-4 Ω-cm) and high transmittance (89 %). The performance of PLED had the best rectification ratio was 410.3 in this series. We also obtained the AZO thin film which has low resistivity (ρ=7.63×10-4 Ω-cm) and high transmittance (91 %) by heating the substrate temperature to 200 ℃ at PAl= 25 W. The performance of PLED has the largest brightness of 4143 cd/m2 at 10.7 V. Finally, the physical properties of the AZO thin films won’t be changed by the difference of the soft substrates.
中文摘要 I
Abstract II
致謝 IV
目錄 VI
表目錄 X
圖目錄 XI
第1章 緒論 1
1-1 透明導電膜簡介 1
1-2 有機發光二極體簡介 6
1-2-1 有機發光二極體之發展歷史 6
1-2-2 有機發光二極體之優、缺點 7
1-2-3 有機發光二極體近年發展 9
1-3 塑膠基板簡介 10
1-4 研究動機 12
第2章 理論基礎 14
2-1 濺鍍原理及系統 14
2-1-1 濺鍍現象 14
2-1-2 射頻磁控濺鍍系統 18
2-1-3 薄膜沉積現象 21
2-2 氧化鋅透明導電膜特性及相關論文回顧 24
2-2-1 氧化鋅薄膜的電性 25
2-2-2 氧化鋅薄膜光學特性 26
2-2-3 氧化鋅薄膜相關文獻之回顧 30
2-3 有機發光二極體 32
2-3-1 發光原理 32
2-3-2 基本結構 37
2-3-3 有機發光元件的光電特性 40
第3章 實驗儀器介紹與樣品製作流程 44
3-1 實驗儀器介紹 44
3-1-1 射頻(RF)磁控溅鍍系統 45
3-1-2 膜厚分析 46
3-1-3 X-ray繞射分析儀 48
3-1-4 歐傑(Auger)電子能譜儀 50
3-1-5 X-ray光電子能譜儀 52
3-1-6 霍爾效應(Hall Effect)量測系統 55
3-1-7 可見光譜分析儀 60
3-2 樣品製作流程 63
3-2-1 實驗流程圖 63
3-2-2 實驗材料 64
3-2-3 製程前處理 64
3-2-4 ZnO:Al薄膜製程步驟 65
第4章 PLED元件製作與量測 67
4-1 PLED元件之製作過程 67
4-2 元件特性量測 72
第5章 實驗結果與討論 73
5-1 室溫下成長薄膜的實驗結果與討論 73
5-1-1 微觀結構分析 74
5-1-2 成分分析 76
5-1-3 電性分析 79
5-1-4 光學特性分析 81
5-2 臨場加溫200 ℃成長薄膜的實驗結果與討論 83
5-2-1 微觀結構分析 83
5-2-2 成分分析 87
5-2-3 電性分析 92
5-2-4 光學特性分析 95
5-2-5 載子濃度與光學能隙相關之討論 98
5-3 不同基板成長薄膜的實驗結果與討論 100
5-3-1 微觀結構分析 100
5-3-2 電性分析 102
5-3-3 光學特性 104
5-4 PLED元件光電特性 108
5-4-1 PC基板在室溫下成長薄膜的元件特性 108
5-4-2 PC基板臨場加溫200 ℃成長薄膜的元件特性 111
5-4-3 不同基板成長薄膜的元件特性比較 116
第6章 結論 118
參考文獻 120
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