臺灣博碩士論文加值系統

在快閃記憶體的可能應用中，成功開發電子迴旋共振化學氣相沉積(ECR-CVD)氫電漿處理以形成鎳奈米懸浮閘顆粒的製程，其目的為降低製程溫度、提高顆粒密度及改善顆粒尺寸均勻性問題。首先，在7.5 nm厚 SiO2之矽晶片上鍍上非揮發性記憶體之懸浮閘材料(Ni)。接著在經由改變不同氫電漿參數，如時間、偏壓、微波功率、溫度等，對Ni/SiO2/Si堆疊結構進行ECR-CVD氫電漿處理。然後，將某些已經過處理之堆疊，鍍上控制氧化層HfO2及鋁閘極，來形成Al/HfO2/Ni/SiO2/Si/Al堆疊。使用場發射掃描式電子顯微技術、原子力顯微技術、高解析度穿透式電子顯微技術、X光電子能譜技術及電容電壓量測系統等，去探討經過每個製程步驟後試片的結構及性質。從實驗結果，可獲得下列結論。
對電漿蝕刻溫度的影響而言，蝕刻的溫度(300oC ~ 470oC)對鎳奈米顆粒的尺寸均勻性並未造成明顯的影響，但較低溫度形成的鎳奈米顆粒密度會稍微提高(高達6.0×1011 /cm2)，且可減少對穿隧層產生的可能性破壞或是反應形成矽化物。換句話說，製程溫度(300oC)遠低於文獻上提過的溫度(~500oC)。
關於電漿蝕刻時間對於鎳奈米顆粒密度及尺寸均勻性而言，電漿主要可熔化鎳薄膜以形成奈米尺寸的島狀物；然而蝕刻時間拉長時，會使得較多的小島狀物聚集成較大的顆粒，或是蝕刻時間太久(~10分鐘)，鎳原子被轟離基材表面，因而造成顆粒密度的下降。目前，若要產生最佳鎳奈米顆粒密度所需之最佳蝕刻時間約為3分鐘。換句話說，相對地可儲存的電子電荷密度可達4.5×1012 cm-2，在掃描偏壓為±12 V時電容記憶視窗開了4.5 V。

中文摘要 I
英文摘要 III
誌謝 V
目錄 VI
符號說明 IX
表目錄 XI
圖目錄 XII
第一章 緒論 1
1.1非揮發性記憶體簡介 1
1.2研究動機 2
第二章 文獻回顧 5
2.1非揮發性記憶體種類及其記憶原理 5
2.2記憶體常見之物理機制 26
2.2.1 熱載子效應 26
2.2.1.1 集極累增熱載子注入(DAHC) 27
2.2.1.2 通道熱電子注入(Channel Hot Electron Injection) 28
2.2.2 冷載子效應 29
2.2.2.1 F-N穿隧(Fowler-Nordheim Tunneling) 29
2.2.2.2 直接穿隧(Direct Tunneling) 32
2.3 非揮發性記憶體可靠度分析 33
2.3.1 資料持久度(Data Retention) 34
2.3.2 耐操度(Endurance) 34
第三章 實驗方法 37
3.1 實驗流程 37
3.2 製程原料 38
3.3 實驗設備 39
3.4 實驗步驟 41
3.5分析設備 44
第四章 結果與討論 48
4.1 氫電漿製程參數處理對鎳薄膜的影響 48
4.1.1 退火對試片表面形貌的影響 48
4.1.2 電漿處理時間對試片表面形貌的影響 56
4.1.3 電漿功率對試片表面形貌的影響 63
4.1.4 電漿偏壓對試片表面形貌的影響 64
4.2 鎳厚度對試片表面形貌的影響 67
4.3 試片性質分析 75
4.4 電容電性分析 80
第五章 總結 87
第六章 未來展望 89
參考文獻 90
個人簡歷 95

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