臺灣博碩士論文加值系統

倍壓器從1976年發展至今已有30年的歷史，但不論是何種倍壓器都有其缺點及優點，而這些倍壓器的缺點大多數都會造成電壓增益以及效率的降低，此篇論文將會改善這些缺點，提出一個全新的交錯式倍壓器電路。截至目前為止，大多數的倍壓器都有臨界電壓（Threshold Voltage）、基體效應（Body Effect）、閘極氧化層穩定度（Gate-Oxide Reliability）、逆向導通耗損（Reversion Loss）、傳導耗損（Conduction Loss）及電荷重新分佈耗損（Redistribution Loss）等種種的問題，上述種種因素會造成閘極氧化層被擊穿使得MOS電晶體損壞之外，亦會導致電壓增益與效率降低，上述的問題只要能夠獲得改善並將能量的耗損降至最低，倍壓器就能有更高的效能。
本論文所提出的交錯式倍壓器電路能夠改善或減少上述非理想因素所造成能量的損失，論文中所提的技術可以在倍壓器操作過程中有效的避免能量的損失，以增加倍壓器的電壓增益與效率，使用TSMC 0.35um 製程來實現所設計的倍壓器電路，其模擬結果可以證明本文中所提技術的正確性與效能。

Charge pump has developed for thirty years from 1976 till now. However, different kinds of charge pump have their advantages and disadvantages. The biggest problem among these charge pump circuits is that most of these charge pumps would cause voltage gain and efficiency lower than the ideal values due to the undesired loss. In this thesis, the disadvantage that charge pump circuits are alleviated and a new cross-coupled charge pump circuit is presented to enhance the performance of energy loss. Till now, most charge pumps all have the same problems such as, threshold voltage drop, body effect, gate-oxide reliability, reversion loss, conduction loss and redistribution loss. These problems may cause the layer of gate-oxide broken and the system failure. Besides, the breakdown not only makes damage to MOS transistors but also decreases voltage gain and, thereby diminishing conversion efficiency of charge pump. Therefore, the most important things that the designers need to do are to minimize the effects of these disadvantages.
The cross coupled charge pump mentioned in this thesis will improve or alleviate the above problems and thus increase the efficiency of charge pump circuits. The proposed technique can effectively avoid the energy loss in the operation of charge pump circuits. The test chip was designed by TSMC 0.35um technology. Simulation results can demonstrate the correctness and performance of the proposed techniques.

摘 要 III
誌 謝 V
目 錄 VI
圖示 IX
表示 XI
第1章 概論 .1
1.1 研究背景 1
1.2 研究動機 2
1.3 直流-直流電壓轉換器概論3
1.3.1 線性穩壓器 4
1.3.2 切換式穩壓器 .8
1.3.3 倍壓器 11
1.4 論文章節結構 13
第2章 倍壓器基本概述 14
2.1 簡介 14
2.1.1 電荷重新分佈 .14
2.1.2 電荷重新分佈產生的耗損 15
2.2 倍壓器類型 16
2.2.1 柯克勞夫-沃爾吞倍壓器 16
2.2.2 狄克森倍壓器 .18
2.2.3 四相式倍壓器 .21
2.2.4 靜態式電荷傳輸切換倍壓器 23
2.2.5 動態式電荷傳輸切換倍壓器 25
2.2.6 交錯式倍壓器 .27
2.3 結論 30
第3章 倍壓器電路架構分析與描述 32
3.1 前言 32
3.1.1 交疊式逆向導通耗損的產生 33
3.1.2 改善交疊式逆向導通耗損 35
3.1.3 非交疊式逆向導通耗損的產生 37
3.1.4 改善非交疊式逆向導通耗損 40
3.2 非交錯式時脈產生電路 43
3.2.1 傳統非交疊式雙相時脈產生器 43
3.2.2 主動式非交疊四相時脈產生器 44
3.3 倍壓器操作時造成的耗損46
3.3.1 傳導耗損 47
3.3.2 減少傳導耗損 .48
3.3.3 電荷重新分佈耗損.49
3.3.4 最佳化電容減少耗損 50
3.4 突波電流的產生與防制 53
3.4.1 突波電流 53
3.4.2 交錯式倍壓器電路模型 54
3.4.3 突波電流的防制 .56
第4章 電路實現與模擬結果 .59
4.1 電路實現 59
4.2 主動式時脈產生器與逆向導通耗損 61
4.3 傳導耗損 64
4.4 突波電流限制器 68
4.5 輸出電壓與效率 71
4.6 晶片佈局 75
第5章 結論與未來研究方向 .76
參考文獻 77

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