(3.237.178.91) 您好!臺灣時間:2021/03/02 22:27
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果

詳目顯示:::

我願授權國圖
: 
twitterline
研究生:劉柏聖
研究生(外文):Po-Sheng Liu
論文名稱:顯影後關鍵尺寸之批次預測與控制
論文名稱(外文):Run to Run Prediction and Control of ADI CD
指導教授:林家瑞林家瑞引用關係
指導教授(外文):Chia-shui Lin
學位類別:碩士
校院名稱:國立交通大學
系所名稱:機械工程系所
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2007
畢業學年度:96
語文別:中文
論文頁數:94
中文關鍵詞:微影製程關鍵尺寸遞迴式最小平方法製程控制能力
外文關鍵詞:photolithography processCritical Dimensionrecursive least squaresprocess control capability
相關次數:
  • 被引用被引用:3
  • 點閱點閱:344
  • 評分評分:系統版面圖檔系統版面圖檔系統版面圖檔系統版面圖檔系統版面圖檔
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0
半導體晶圓尺寸從8吋邁向12吋,線寬從微米縮小至奈米的新世代,晶圓越大線寬越小相對於製程方面也越來越複雜,晶圓製程中微影製程是決定線寬是否能更小的主要因素。 微影製程檢視又可分為三大類,層對層覆蓋誤差檢查(Overlay error)及線與孔的寬度檢查(Critical Dimensions, CD)以及顯影後檢查(After Develop Inspection, ADI),微影製程良率就是取決於這三項參數。

本論文所研究的方向是設計一套應用於微影製程之關鍵尺寸(Critical Dimension,CD)的批次(Run to Run)多輸入單輸出(MISO)先進製程控制方法。利用實驗設計法(Design of Experiment,DOE)找出步進機之輸入變數(製程配方:焦距跟能量)與輸出變數(關鍵尺寸)之間的關係,建立批次控制預測模式,然後利用Recursive Least Squares係數調變方法,作為模型係數的動態調整,以適應製程隨時間變化之變異及干擾,再以調變完成之模型係數更新批次控制器,計算出機台的最佳輸入變數(最佳能量以及最佳焦距),達到我們所設定的CD目標值,提高製程控制能力,增進晶圓的線寬品質。驗證結果發現ADI CD 的 在使用RLS Run to Run控制器後,能夠從沒有ADI CD回饋控制的1.472提升至1.8136,改善約23%。
Semiconductor wafer size has been increased from 8 inch to 12 inch, line width in the IC wafer has been reduced from micrometer to nanometer range. The bigger the wafer size and the smaller the line width, the more complicated the wafer manufacturing process. Photolithography process is the key process in reducing line width in IC wafer. There are three kinds of photolithography process inspection, i.e. overlay error, critical dimension (CD) and after develop Inspection (ADI), the yield of photolithography process depends on these three parameters.

This research proposes a new run to run (MISO) advances process controller for photolithography process. In this thesis, the run to run control model among input recipes (focus and exposure dose) and output variables (Critical Dimension) are formed by using design of experiment (DOE) method. We then uses on-line recursive least squares (RLS) model identification to update parameters of run to run controller. We can find the best recipe (best focus and best exposure dose) to keep CD on the target, enhance the process control capability and improve the quality of line width on the wafer. According to experimental results, using RLS Run to Run controller, of ADI CD can be improved from 1.472 to 1.8136, a 23% improvement compared with the case of no feedback control of ADI CD.
目 錄
中文摘要.................................................i
英文摘要...............................................iii
致謝.....................................................v
目錄....................................................vi
圖目錄................................................viii
表目錄...................................................x
符號說明................................................xi
第一章 緒論............................................1
1.1 研究動機與目的.......................................1
1.2 文獻回顧.............................................2
1.3 研究方法.............................................4
1.4 研究本文組織架構.....................................5
第二章 微影製程及步進機等設備介紹.......................7
2.1 微影製程與步進機原理...............................7
2.2 微影製程...........................................7
2.3 步進機介紹........................................12
第三章 實驗設計法與資料分析............................16
3.1 實驗設計法介紹....................................16
3.2 微影製程之實驗設計與資料分析......................19
3.3 最小平方誤差法原理................................20
第四章 控制器設計......................................25
4.1 EWMA Run to Run控制器架構.........................25
4.2 RLS動態模型調變方法...............................28
4.3 RLS Run to Run 控制器.............................31
第五章 模擬結果與實驗驗證..............................32
5.1 控制器模擬與比較..................................32
5.2.1 無回饋控制的模擬比較............................32
5.2.2 EWMA控制器的模擬比較…..........................36
5.2.3 RLS Run to Run控制器的模擬比較..................38
5.3.1 實驗驗證..........................................41
5.3.2 實驗設備........................................41
5.3.3 實驗結果與結論..................................43
第六章 結論與未來研究之建議............................46
6.1 Run to Run 控制器的模擬比較.........................46
6.2 Run to Run 控制器的實驗比較.........................46
6.3 未來研究之建議......................................47
參考文獻................................................49
參考文獻
[1] R.Hershel,C.A.Mack, "Lumped Parameter Model for Optical
Lithograpgy, " Chap.2, lithography for VLSI,VLSI Electronics Microstructure Science, R.K.Watts and N.G.Einsprush eds,Academic Press, New Yoek,1987.
[2] O.D.Crisalel,R.A.Soper,D.A.Mellichamp,D.E.Seborg,
"Adaptive Control of Photolithography, "AIChE Journal,Vol.38 No.1,p1-p14,1992.
[3] A.Ingolfsson,E.Sachs, "Stability and Sensitivity of an EWMA controller," Jounal of Quality Technology,Vol.25 NO.4,p271-p287,1993
[4] Lennart Ljung,systemidentification,prentice-Hall,1987
[5] 葉怡成,實驗計劃法-製程與產最佳化,五南圖書出版股份有限公司,民國九十年。
[6] Douglas C.Montgomery,Design and Analysis of Experiment, Edition
[7] 莊達仁,VLSI製造技術,高利圖書有限公司著作發行,民國九十一年。
[8] 張俊彥,鄭晃忠,積體電路製程及設備技術手冊,經濟部技術處發行,民國八十六年七月。
[9] M.A.Spak, "High Temperature Post Exposure Bake(HTPEB) for AZ4000 Photoresist, " SPIE Vol.539,1985,advances in resist Technology and Processing II,p299-p307.
[10] H.C.Hsieh, "Swing and Proximity Effect in Sub-half-micron Lithography, " TSMC,1994
[11] Wenzhan Zhou,Alex See,Jin Yu, "Advanced Exposure and Focus Control by Proximity Profile Signature Matching, " Proc. of SPIE Vol.6155,61550H.
[12] Masafumi Asano,"Run to Run CD Error Analysis and Control with Monitoring of Effective Dose and Focus, " Proc. of SPIE Vol.5038.
[13] 劉佳房,「黃光製程建模與控制」,國立清華大學,碩士論文,民國九十三年六月。
[14] 洪志明,「應用動態模式最小變異控制器於先進微影製程控制」,國立交通大學,碩士論文,民國九十五年一月。
[15] G.E.Box,M.Jenkins,Time series Analysis:Forcasting and Control,CA:Holden-Day,1976
[16] T.Smith,D.Boning, "Self-Tuning EWMA Controller Utilizing Artificial Neural Network Function Approximation Techniques, " IEEE Transactions on Components, Packaging, and Manufacturing Technology,p121-p132,March 1997.
[17] G.Gardarelli,M.Palumbo,P.M.Pelagagge,
"Photolithography Process Modeling Using Neural Networks, "Semiconductor International,p199-p206,1996.
[18] 黃育昌,「應用微影覆蓋誤差的錯誤診斷分析改善微影製程總體設備效能」,國立交通大學,碩士論文,民國94年。
[19] Christopher Gould, "Advanced Process Control:Basic Functionity Requirements for Lithopraghy," IEEE/SEMI Advanced Semiconductor Manufacturing Conference,2001.
[20] Christopher Gould, "Advanced Process Control:Benefits for Photokithography Process Control," IEEE/SEMI Advanced Semiconductor Manufacturing Conference,2002.
[21] J.Moyne,E.D.Castillo,A.M.Hurwitz, Run to Run Control in Semiconductor Manufactiring,CRC press LLC,2001.
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top
系統版面圖檔 系統版面圖檔