臺灣博碩士論文加值系統

本論文研究目的為以X光繞射分析以分子束磊晶技術，在矽(111)基板上成長氮化鎵、氮化銦薄膜的晶體品質。本論文量測不同倒置晶格向量與薄膜表面垂直方向夾角的非對稱晶格面搖擺曲線、不同倒置晶格向量長度的對稱晶格面搖擺曲線以及非對稱晶格面倒置空間譜圖，估算氮化鎵、氮化銦薄膜之鑲嵌結構的傾轉角、扭轉角與橫向契合長度。藉由X光繞射估算的結果，計算氮化鎵、氮化銦薄膜中螺旋差排、刃型差排的密度。本論文以plan-view TEM實驗結果做對照，探討上述三種量測方法的差異與適用性。由於以X光繞射估算的刃型差排密度與plan-view TEM量測的結果十分接近，證實以X光繞射估算刃型差排密度的準確性與可行性。

The crystal quality of GaN and InN films grown on Si (111) substrate by molecular beam epitaxy have been evaluated by x-ray diffraction. Asymmetric rocking curves of different inclination angle between reciprocal lattice vector and surface normal, symmetric rocking curves of different reciprocal lattice vector length, and asymmetric reciprocal space mapping are measured to estimate deduce the tilt angle, twist angle, and lateral coherence length of mosaic structure in GaN and InN. Edge and screw dislocation densities in GaN and InN films were calculated according to XRD resuls. The difference and suitability of three different approaches adapted in this study are compared with plan-view TEM experimental results. The feasibility and accuracy of XRD are verified in our study because the edge type dislocation density estimated from XRD by choosing parameters deduced by various approaches is close to that measured by plan-view TEM.

目錄

中文摘要 i
英文摘要 ii
誌謝 iii
目錄 iv
圖目錄 vi
表目錄 ix
第一章 緒論 1
第二章 三族氮化物薄膜的特性 4
2-1 三族氮化物晶體結構 4
2-2 晶格不匹配結構 8
2-3 貫穿式差排 11
2-3-1 貫穿式差排的形成與類型 11
2-3-2 差排對半導體元件的影響 13
第三章 量測儀器架構與原理簡介 17
3-1 X光繞射原理 17
3-1-1 X光的產生與X光光譜 17
3-1-2 布拉格定律 19
3-1-3 契合散射(coherent scattering) 20
3-1-4 勞厄繞射條件與愛華德球面 23
3-2 高解析度X光繞射儀(HRXRD) 27
3-3 X光繞射量測方法 29
3-3-1 ω/2θ scan 29
3-3-2 ω scan 31
3-3-3 繞射幾何 33
3-3-4 倒置空間譜圖(reciprocal space mapping) 35
3-4 穿透式電子顯微鏡(Transmission Electron Microscope) 39
第四章 量測結果與分析 42
4-1 量測樣品簡介 42
4-2 鑲嵌結構分析方法 44
4-2-1 搖擺曲線半高寬分析法 44
4-2-2 Williamson-Hall 圖形分析法 46
4-2-3 倒置空間譜圖分析法 47
4-2-4 搖擺曲線半高寬與差排密度的關係 49
4-2-5 搖擺曲線繞射峰擬合函數 51
4-3 氮化鎵樣品分析 53
4-3-1 XRD量測分析 53
4-3-2 TEM量測分析 61
4-4 氮化銦樣品分析 63
4-4-1 XRD量測分析 63
4-4-2 TEM量測分析 72
第五章 結論 74
參考文獻 76
作者簡歷 80


圖目錄

圖 1-1 半導體材料能隙及晶格常數分佈圖 1
圖 2-1 三族氮化物 (a) wurtzite 結構 (b) zincblende 結構 5
圖 2-2 最密堆積的堆疊位置 5
圖 2-3 烏采(wurtzite)結構排列圖 6
圖 2-4 閃鋅(zincblende)結構排列圖 6
圖 2-5 磊晶薄膜應變的橫截面示意圖 (a)同質磊晶 (b)壓縮應變 (c)伸張應變 9
圖 2-6 磊晶薄膜鬆弛的橫截面示意圖 10
圖 2-7 半環型式差排示意圖 11
圖 2-8 柏格斯向量示意圖 12
圖 2-9 貫穿式差排的類型 (a)刃型差排 (b)螺旋差排 (c)混合差排 12
圖 2-10 三族氮化物鑲嵌結構示意圖 14
圖 2-11 貫穿式差排對晶格面的影響 15
(a)螺旋差排造成(0001)晶格面的傾轉　(b)刃型差排造成　　　晶格面組的扭轉 15
圖 3-1 銅靶材X光連續光譜 18
圖 3-2 電子躍遷產生特性輻射示意圖 19
圖 3-3 布拉格繞射圖 20
圖 3-4 X光契合散射示意圖 21
圖 3-5 不同N1值的干涉函數圖 23
圖 3-6 勞厄繞射條件示意圖 24
圖 3-7 愛華德球面與倒置晶格向量關係 25
圖 3-8 晶格與倒置晶格的關係圖 26
圖 3-9 高解析度X光繞射儀架構圖 27
圖 3-10 Siemens D5000高解析度X光繞射儀 28
圖 3-11 樣品座的三種旋轉軸示意圖 29
圖 3-12 ω/2θ scan 示意圖 30
圖 3-13 ω/2θ scan 改變倒置晶格向量大小示意圖 31
圖 3-14 ω scan 示意圖 32
圖 3-15 ω scan改變倒晶格向量方向示意圖 32
圖 3-16 繞射幾何 (a)對稱繞射 (b)非對稱繞射 34
圖 3-17 斜對稱繞射 34
圖 3-18 倒置空間譜圖的掃描方式 36
圖 3-19 倒晶格向量與ω scan、ω/2θ scan的幾何關係圖 36
圖 3-20 六方晶系氮化鎵的倒置晶格點可量測區域示意圖 37
圖 3-21 實際空間尺寸與倒置空間尺寸的關係 38
圖 3-22 穿透式電子顯微鏡架構圖 40
圖 3-23 JEOL JEM-2010穿透式電子顯微鏡 40
圖 3-24 穿透式電子顯微鏡樣品製作流程圖 41
圖 4-1 斜對稱與非對稱繞射入射面的區別 45
圖 4-2 鑲嵌結構倒置晶格點的形狀　(a)晶粒尺寸對倒置晶格點的寬化 48
(b)傾轉角對倒置晶格點的寬化　(c)兩種寬化在對稱晶格面倒置晶格點的疊加 48
圖 4-3 倒置空間譜圖分析法示意圖 49
圖 4-4 (a) GaN-A 晶格面(0002)以及(b) 搖擺曲線及三種函數擬合的曲線 52
圖 4-5 氮化鎵薄膜樣品ω/2θ scan繞射譜圖 53
圖 4-6 氮化鎵薄膜樣品的V. Srikant等式數值擬合 55
圖 4-7 氮化鎵薄膜樣品的Williamson-Hall 圖形分析法數值擬合 56
圖 4-8 氮化鎵薄膜樣品Williamson-Hall 圖形分析法與V. Srikant等式的傾轉角 57
圖 4-9 GaN-A晶格面 倒置空間譜圖 58
圖 4-10 GaN-B晶格面 倒置空間譜圖 59
圖 4-11 (a) GaN-A plan-view TEM (b) GaN-B plan-view TEM 62
圖 4-12 氮化銦薄膜樣品ω/2θ scan繞射譜圖 63
圖 4-13 氮化銦薄膜樣品的V. Srikant等式數值擬合 64
圖 4-14 氮化銦薄膜樣品的Williamson-Hall 圖形分析法數值擬合 66
圖 4-15 氮化銦薄膜樣品Williamson-Hall 圖形分析法與V. Srikant等式的傾轉角 67
圖 4-16 InN-A晶格面 倒置空間譜圖 68
圖 4-17 InN-B晶格面 倒置空間譜圖 68
圖 4-18 InN-C晶格面 倒置空間譜圖 69
圖 4-19 InN-D晶格面 倒置空間譜圖 69
圖 4-20 InN-E晶格面 倒置空間譜圖 70
圖 4-21 氮化銦薄膜樣品成長溫度與差排密度關係圖 72
圖 4-22 (a) InN-C plan-view TEM (b) InN-D plan-view TEM 73


表目錄

表2-1 氮化物及一般常用基板的晶格常數、熱膨脹係數及相關參數 7
表3-1 六方晶系三族氮化物的本徵寬度 33
表4-1 氮化鎵薄膜樣品的成長條件 42
表4-2 氮化銦薄膜樣品的成長條件 43
表4-3 三種函數擬合以及Leptos軟體分析得到的半高寬 52
表4-4 氮化鎵樣品各個晶格面的χ角、半高寬以及勞倫茲函數的比例 54
表4-5 氮化鎵薄膜樣品各個對稱晶格面的布拉格角以及半高寬 56
表4-6 GaN-A、GaN-B以倒置空間譜圖分析法分析得到的各項參數 59
表4-7 氮化鎵薄膜樣品傾轉角、扭轉角、橫向契合長度、螺旋與刃型差排密度 60
表4-8 GaN-A、GaN-B XRD與plan-view TEM估算的刃型/混合差排密度 62
表4-9 氮化銦樣品各個晶格面的χ角、半高寬以及勞倫茲函數的比例 65
表4-10 氮化銦薄膜樣品各個對稱晶格面的布拉格角以及半高寬 66
表4-11 氮化銦薄膜樣品以倒置空間譜圖分析法分析得到的各項參數 70
表4-12 氮化銦薄膜樣品傾轉角、扭轉角、橫向契合長度、螺旋與刃型差排密度 71
表4-13 InN-C、InN-D XRD與plan-view TEM估算的刃型/混合差排密度 73

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