臺灣博碩士論文加值系統

本論文主要是在磁性薄膜上鍍上覆蓋層，探討覆蓋層對磁光訊號的影響。鍍上覆蓋層除了可以增加入射訊號在磁性層反射的機率，也可以改善磁性層氧化的缺點，進而增強磁光訊號的強度，同時不會改變磁性材料的Corceivity，磁光訊號的強弱可以從科爾旋轉角的測量得到，改變覆蓋層的材料分別為SiNX、MgO、Ta，之所以選用SiNX當覆蓋層在於SiNX的透光性好、防潮性佳，MgO雖然防潮性較差但透光性也很好，因此用來跟SiNX作比較；Ta的優點在於較堅硬，可用來防止表面的刮傷，使得表面較為平整不粗糙。因此對於這三種材料探討不同的厚度(6~100nm)對科爾旋轉角的關係。除了材料的討論之外，還探討不同的入射角對科爾旋轉角的關係，從實驗數據可以看出入射角為60度時訊號最強。SiNX與MgO為絕緣材料，在0nm~60nm的範圍，科爾旋轉角隨著覆蓋層厚度的增大而有所提昇強度，原因在於此區間為薄膜系統，覆蓋層可以增強磁光訊號，但在60nm~100nm的範圍中，科爾旋轉角反而隨著覆蓋層厚度的增大而有所減小強度，原因在於此區間為塊材系統，覆蓋層不但不能增強訊號，反而會降低訊號。Ta為金屬材料，受到了肌膚效應的影響，科爾旋轉角強度隨著覆蓋層的厚度增厚而漸漸減小至接近完全抵消訊號。

The objective of my thesis is mainly to investigate influence of capping layer on magneto-optical Kerr effect in magnetic sheet-film systems. To prevent the unwanted oxidation of the magnetic layer, we overlay the capping layer on the optically magnetic layer. With a capping layer, the magnetic character of the magnetic layer didn’t change and the capping layer increase intensity of the kerr rotation. We change three materials of capping layer. The three materials are SiNX, MgO, and Ta. With change the material of the capping layer, we also change the depth of every capping layer. Otherwise, we change the different incident angle. When the incident angle is sixty, the intensity of the kerr rotation present the best result. We first discuss the the capping later of SiNX and MgO which both are insulated material. With the depth of capping layer from 0nm to 60 nm, the capping layer increase the intensity of kerr rotation by the thin-film system. With the depth of capping layer from 60nm to 100 nm, the capping layer decrease the intensity of kerr rotation by the thin-film system by the bulk material system. Secondly, the capping layerof Ta is metal material, the capping layer decrease the intensity of kerr rotation by the thin-film system by the skin effect.

第一章 緒論 ………………………………………………………1
1-1 前言 ………………………………………………………1
1-2 磁性的起源 ………………………………………………2
1-3磁阻材料的發展與應用……………………………………3
1-4 磁特性 ……………………………………………………4
第二章 理論與文獻探討 …………………………………………5
2-1 磁光發展 ………………………………………………5
2-2 磁滯曲線 …………………………………………………5
2-3 法拉第效應 ………………………………………………7
2-3-1光的偏振………………………………………………7
2-3-2 法拉第效應的宏觀理論 ……………………………9
2-4科爾磁光效應 ………………………………………………12
2-4-1科爾磁光效應原理……………………………………12
2-4-2科爾磁光效應在多層膜的應用………………………14
第三章 實驗設備與實驗步驟 ……………………………………21
3-1實驗設備……………………………………………………21
3-1-1濺鍍系統 ……………………………………………21
3-1-2微影系統-曝光機……………………………………29
3-1-3原子力顯微鏡 ………………………………………31
3-1-4 磁光柯爾效應測量儀………………………………35
3-2 實驗步驟 …………………………………………………38
3-2-1 清潔樣品 …………………………………………38
3-2-2 濺鍍…………………………………………………38
3-2-3 厚度量測 …………………………………………39
3-2-4 磁性量測 …………………………………………40
第四章 實驗結果與討論 …………………………………………41
4-1 前言…………………………………………………………41
4-2 改變磁性層厚度之研究……………………………………41
4-3 改變入射角之研究…………………………………………45
4-4 固定入射角、改變保護層厚度和材料之研究……………48
4-4-1 改變不同SiNX厚度 …………………………………49
4-4-2 改變不同Ta厚度 ……………………………………50
4-4-3改變不同MgO厚度 ……………………………………51
4-4-4不同覆蓋層材料的統整 ………………………………52
4-4-4-1 絕緣材料(SiNX&MgO)…………………………52
4-4-4-1 金屬材料(Ta) …………………………………54
第五章 結論 ………………………………………………………55
參考文獻………………………………………………………………57

圖2-1 磁性材料中，磁化強度M 與外加磁場H 之關係圖······ 6
圖2-2 縱向磁光與橫向磁光 ····························· 13
圖2-3 S 波與P 波······································ 14
圖2-4 科爾旋轉角示意圖································ 15
圖2-5 多層膜(n1\n2\n3) ································ 15
圖2-6 θj 示意圖········································ 16
圖2-7 MOKE 架構圖····································· 17
圖2-8 蓋上覆蓋層之多層膜結構·························· 19
圖3-1 物理沉積法的分類整理···························· 22
圖3-2 薄膜成長機制的說明圖···························· 23
圖3-3 濺度時金屬沈積過程······························ 26
圖3-4 多層膜濺鍍系統示意圖···························· 28
圖3-5 曝光系統裝置圖··································· 30
圖3-6 作用力與距離之關係圖···························· 32
圖3-7 AFM 之操作模式 ································· 34
圖3-8 AFM 的基本架構示意圖···························· 34
圖3-9 磁光柯爾效應之示意圖···························· 36
圖3-10 磁光柯爾效應測量儀之實際裝置照片··············· 37
圖4-1 改變磁性層厚度示意圖···························· 41
圖4-2 CoFe45nm 磁滯曲線······························· 42
圖4-3 改變磁性層厚度之M-H loop ······················ 42
圖4-4 CoFe 厚度與科爾旋轉角之關係圖··················· 43
圖4-5 CoFe 厚度與Corceivity 關係圖···················· 44
圖4-6 改變入射角之示意圖······························ 45
圖4-7 入射角與科爾旋轉角之關係圖 ····················· 46
圖4-8 入射角與科爾旋轉角之模擬圖 ····················· 47
圖4-9 改變保護層厚度和材料之示意圖···················· 48
圖4-10 改變不同SiNX厚度之M-H loop ···················· 49
圖4-11 改變不同Ta 厚度之M-H loop ···················· 50
圖4-12 改變不同MgO 厚度之M-H loop ··················· 51
圖4-13 不同覆蓋層厚度與科爾旋轉角之關係圖 ············ 52
圖4-14 SiNx 厚度與科爾旋轉較之模擬圖·················· 53
圖4-15 肌膚效應示意圖 ································ 54

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