臺灣博碩士論文加值系統

本實驗的目的是在室溫的條件下製作氧化銦(Indium oxide) 透明薄膜電晶體，InO薄膜電晶體的通道層是以活性射頻磁式濺鍍的方法來成長，我們在通入氬氣和不同比例氧氣的條件下，進行InO電阻率、透光率、X-ray繞射及表面結構的分析。目前氧化銦在50 %通氧量的條件下電阻率約為 4.7×104 Ω-cm，平均透光率約為87 %。此外InO - TFT的電極材料及絕緣層則採用ITO及SiNX，ITO的電阻率約為7×10-4Ω-cm，平均透光率約為85 %，SiNX在1 MV/cm電場下的漏電流約為1×10-10 A/cm2。
本實驗所製作出來的InO薄膜電晶體，在通道長寬各為20μm的條件下，其最佳的電子遷移率為 3.8 cm2V-1s-1，VT為 1.72 V，電流開關比為2.3×106，subthreshold swing 為1.56 V/decade。

Transparent InO (Indium oxide) thin-film transistors fabricated by reactive ratiofrequency (rf) magnetron sputtering at room temperature were demonstrated. The resistivity, transmittance, X-ray diffraction pattern, and surface morphology of the films prepared at different oxygen partial pressures were investigated. At a 50% oxygen partial pressure, the resistivity and the average transmittance of the films are 4.7×104 Ω-cm and 87 %, respectively. Indium tin oxide (ITO) and silicon nitride (SiNX) thin films are used as the electrode and gate insulator. The resistivity and the average transmittance of ITO electrodes are 7×10-4 Ω-cm and 85%. On the other hand, the maximum leakage current of less than 1×10-10A/cm2 was obtained for the SiNX layer at an electric field of 1 MV/cm.
For a 20μm channel length InO TFT , the measured saturation mobility, threshold voltage, on/off ratio and subthreshold swing are 3.8 cm2V-1s-1, 1.72 V, 2.3×106 and 1.56 V/decade, respectively.

第一章 導論
1-1 簡介 ----------------------------------------- 01
1-2 非晶矽薄膜電晶體 ----------------------------- 02
1-3 透明薄膜電晶體 --------------------------- 04
1-4 研究動機 ------------------------------------- 04
第二章 製程材料與儀器介紹
2-1 氧化銦錫(ITO)和氧化銦(In2O3) ------------- 07
2-2 氮化矽(Si3N4) ---------------------------------- 09
2-3 RF磁式濺鍍系統 ------------------------------- 10
2-4 量測儀器介紹 --------------------------------- 12
2-4-1 四點探針(Four-point-probe) ------------ 12
2-4-2 橢圓偏光儀(Ellipsometer) -------------- 13
2-4-3 X光繞射儀(XRD) ----------------------- 14
2-4-4 原子力顯微鏡(AFM) ---------------------- 16
2-4-5 場發射型掃描式電子顯微鏡(SEM) ---- 16
2-4-6 半導體參數分析儀(Semiconductor Parameter analyzer) ---------------- 17
第三章 實驗步驟
3-1 材料的成長條件
3-1-1 氧化銦錫(ITO) --------------------------- 18
3-1-2 氧化銦(In2O3) --------------------------- 20
3-1-3 氮化矽(Si3N4) ------------------------- 21
3-2 元件製作流程
3-2-1 光罩設計 ------------------------------- 22
3-2-2 元件製程 ------------------------------- 24
第四章 結果與討論
4-1 氧化銦材料分析
4-1-1 折射率 ---------------------------------- 29
4-1-2 電阻率(Resistivity) ------------------------ 30
4-1-3 透光率(Transmittance) --------------------- 31
4-1-4 X-ray繞射 ----------------------------- 32
4-1-5 表面結構與粗糙度 ----------------------- 34
4-2 氧化銦薄膜電晶體特性
4-2-1 量測結果 ------------------------------- 36
4-2-2 結果分析 ------------------------------- 38
第五章 結論 ---------------------------------------- 44
參考文獻.......................................45

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