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研究生:陳奇宏
研究生(外文):Chih-hung Chen
論文名稱:p-i-n結構之CIS薄膜太陽能電池之研究
論文名稱(外文):Study on CIS thin-film solar cells with p-i-n structures
指導教授:曾百亨曾百亨引用關係
指導教授(外文):Bae-Heng Tseng
學位類別:碩士
校院名稱:國立中山大學
系所名稱:材料科學研究所
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2008
畢業學年度:96
語文別:中文
論文頁數:74
中文關鍵詞:蒸鍍太陽能電池
外文關鍵詞:p-i-nCIS
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本論文的太陽能電池與傳統的不同之處在於採用p-i-n的結構設計。由於In-rich CIS的高電阻率與低載子濃度兩種特性較接近本質半導體且其容易製作,在此我們使用In-rich CIS做為中間的本質層。
以Si wafer(100)做為p層、In-rich CIS做為i層、AZO做為n層。在無CdS緩衝層的情況下,改變In-rich CIS薄膜厚度而其他參數保持不變,當In-rich CIS薄膜厚度~500 nm,量測元件上In-rich CIS最接近定比線的位置可得到最佳參數,其參數分別為VOC=0.388V,JSC=8.85mA/cm2,FF=39.5%,並發現元件上In-rich CIS越接近定比組成的位置,元件照光後的I-V特性表現越好,當In-rich CIS超過臨界厚度時,元件照光後的I-V曲線趨向飽和。
In-rich CIS的高電阻率與Si wafer表面的SiO2造成較高的串聯電阻,估計是使元件的FF不理想的主因。
1. 簡介 1
1.1 Why photovoltaics ? 1
1.2 太陽能電池的發展 2
1.3太陽能電池運作原理 4
1.4元件設計 5
1.4.1 異質接面 5
1.4.2 p-i-n結構 7
1.4.3 與現今發展技術接合 7
2. 材料特性 8
2.1 Al背電極與Si wafer 8
2.2 CIS吸收層 8
2.3 CdS緩衝層 10
2.5 ZnO:Al外窗層與Al上電極 11
3. 製程儀器與分析儀器 13
3.1 濺鍍系統 13
3.2 蒸鍍系統 13
3.3 穿透(吸收)光譜儀(UV/VIS/NIR spectrometer) 14
3.4 反射光譜儀 15
3.5表面輪廓儀(Depth Profiler) 15
3.6 X光繞射儀(XRD) 16
3.7 掃描式電子顯微鏡(SEM) 16
3.9 四點探針 17
3.10 熱探針 17
3.11 電流電壓(I-V)量測 17
4. 實驗製作方式 19
4.1基板 19
4.2 Al背電極 20
4.3 CIS主吸收層 20
4.4 CdS緩衝層 21
4.5 AZO外窗層與Al上電極 21
5. 實驗分析與討論 22
5.1 Al背電極與Si wafer 22
5.2 CIS主吸收層 22
5.3 CdS緩衝層 24
5.4 AZO外窗層與Al上電極 24
5.5 元件量測 25
6. 結論 28
參考文獻 29
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