臺灣博碩士論文加值系統

本論文利用超快時間解析設備對一系列生長於矽(111)基板的氮化銦薄膜研究載子動力學。在研究能量鬆弛上顯示熱聲子效應在光產生載子濃度大於4×10^18cm^-3是非常顯著的，當載子濃度小於7×10^17cm^-3則不明顯。本論文假設是載子與縱向光學聲子的交互作用支配了能量鬆弛過程，且從時間變化的載子溫度可得到有效聲子釋放時間的範圍是116到23飛秒。在研究載子結合方面，經由速率方程式分析在時間積分螢光光譜峰值能量上的時間解析螢光光譜，改變晶格溫度會變化衰退率，這些包含了非輻射與輻射係數，和螢光強度與光產生載子濃度的非線性關係。Shockley-Read-Hall速率隨著溫度增加，暗指著除了中間能隙缺陷狀態之外，在高晶格溫度下載子動能增加使得熱活化捕捉能力變得顯著。在低溫時主要是由輻射結合支配了結合過程，但到了高溫則不顯著。在35K的擬合輻射係數與理論預測值一致。Auger結合係數正比於載子濃度的二次方，且在高溫與高載子濃度時候此效應非常顯著。擬合的Auger結合係數可與能隙分布範圍在0.6-0.8eV的InGaAs和InGaAsP材料比較。

This theses investigates the carrier dynamics in Indium Nitride thin films grown on Si(111) substrates by means of ultrafast time-resolved photoluminescence (TRPL) apparatus. The study of energy relaxation shows hot phonon effective is prominent at photogenerated carrier concentration above 4×10^18cm^-3 and become insignificant at carrier concentration below 7×10^17cm^-3. Effective phonon emission times in the range of 116 to 23 femtoseoncds are obtained from the time evolution of carrier temperature assuming that the carrier-LO-phonon interaction is the dominant energy relaxation process. In the study of carrier recombination, the TRPL’s are studied at the peak energies of the time-integrated PL at various lattice temperatures and are converted to decay rates with a rate equation, which includes the nonradiative and radiative coefficients, and a nonlinear dependence of PL intensity on the photogenerated carrier concentration. The increase with temperatures of the Shockley-Read-Hall rates implies that, in addition to the mid-gap defect states, a thermally activated trapping may become prominent at high lattice temperatures due to the increased kinetic energy gained by the carriers. The radiative recombination is the dominated recombination mechanism at low temperature but become trivial at high temperature. The fitted radiative coefficient at a temperature of 35K is consistent to the theoretical prediction. The Auger recombination exhibits a quadratic dependence on carrier concentration and becomes effective at high carrier concentration and at high temperature. The fitted Auger recombination coefficients are comparable to those of InGaAs and InGaAsP materials with band gap energies in the range of 0.6-0.8eV.

摘要…………………………………………………………I
Abstract……………………………………………………II
目錄…………………………………………………………II
圖目錄………………………………………………………V
表目錄………………………………………………………X
第一章 導論………………………………………………01
1-1 氮化銦的發展簡史…………………………………02
1-2 文獻回顧與動機……………………………………04
1-3 論文架構……………………………………………07
第二章 樣品介紹…………………………………………09
第三章 實驗原理與架設…………………………………13
3-1 Sum-Frequency Generation………………………13
3-2 和頻光與相位匹配角度……………………………16
3-3 實驗架構……………………………………………21
第四章 載子動力學………………………………………26
4-1 傳導帶載子之非結合與能量釋放機制……………26
4-2 傳導帶載子之結合與能量釋放機制………………28
4-3 載子結合率與衰退率………………………………31
第五章 實驗結果與討論…………………………………36
5-1 光產生載子濃度分析………………………………36
5-2 光激發螢光光譜……………………………………41
5-3 載子溫度分析………………………………………52
5-4 衰退率分析…………………………………………60
5-5 內部發光效率分析…………………………………71
5-6 上升時間數據分析…………………………………73
第六章 結論………………………………………………79
參考文獻……………………………………………………81

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