This thesis is on the preparation of Al2O3 thin films on InSb substrate by atomic layer deposition (ALD) using trimethyl-aluminum as the metal precursor. Two different surface pre-treatments are introduced before Al2O3 deposition: TMA/Ar pulse and chemical etching with CP4A. The cleaning effects of three pre-treatments to form well-defined interface are demonstrated. Chemical compounds retained at the interface after the different cleaning process are identified by XPS and an in-situ cleaning mechanism based on a ligand exchange reaction is proposed.
Then, the electrical properties of Al2O3 film deposited on InSb with different surface condition are studied. The J-Vg relation exhibits the good insulator property (~10-8 to 10-7 A/cm2 within ±4V) and the C-V characteristics at 77k reveal the satisfactory performance of the MOS structure. An improvement of the electrical properties from the cleaning treatments is clearly demonstrated. Rapid thermal annealing (RTA) before metallization was also carried out in this work, but the electrical properties become degraded which is attributed to the generation of interface states by the RTA treatment.

Chapter 1 Introduction 1
1.1 Introduction 1
1.2 Research Motivation 4
1.3 Research Objective 6
Chapter 2 Literature Review 7
2.1 Introduction of III-V semiconductor in MOSFET 7
2.2 High-k oxide Deposition 10
2.2.1 Physical Vapor Deposition 10
2.2.2 Chemical Vapor Deposition 12
2.2.3 Chemical Solution Deposition 15
2.3 Atomic Layer Deposition 15
2.3.1 ALD mechanism,,, 15
2.3.2 Strength and Shortcoming 20
2.4 Dielectric Properties 22
2.4.1 Dielectric constant 22
2.4.2 Dielectric strength 26
2.5 Leakage current Mechanism 29
2.6 Surface Passivation of InSb 36
2.6.1 Removal of InSb native oxides 36
2.6.2 Interfacial cleaning effect of ALD on III-V substrate 38
Chapter 3 Methods and Experiments 40
3.1 Experimental details and procedures 40
3.1.1 Process flow 40
3.1.2 Analysis and measurements 50
Chapter 4 Results and Discussion 53
4.1 The cleaning effect of different surface treatments 53
4.1.1 Surface morphology 53
4.1.2 Removal of native oxides 62
4.2 HRTEM image analysis after ALD-Al2O3 deposition 69
4.3 XPS spectra analysis after ALD-Al2O3 deposition 71
4.3.1 Interfacial cleaning effect 71
4.3.2 Ligand exchange reaction 76
4.4 Electrical properties analysis 80
4.4.1 J-Vg measurements 80
4.4.2 The leakage current mechanisms 81
4.4.3 C-Vg measurements 85
4.5 The influence of rapid thermal annealing of Al2O3/InSb 89
4.5.1 C-V characteristics of RTA process in different atmosphere 89
4.5.2 J-Vg relation of RTA process in different atmosphere 92
4.5.3 Electrical properties of RTO treatment with different time 94
Chapter 5 Conclusion 97
Reference 98

Moore G E 1965 Electronics 38 114-117
R. Chau, S. Datta, M. Doczy, B. Doyle, J. Kavalieros, and M. Metz, IEEE
Electron Device Letters, 25, 408, (2004).
S. E. Thompson, M. Armstrong, C. Auth, S. Cea, R. Chau, G. Glass, T. Hoffman, J. Klaus, Z. Ma, B. McIntyre, A. Murthy, B. Obradovic, L. Shifren, S. Sivakumar, S. Tyagi, T. Ghani, K. Mistry, M. Bohr, and Y. El-Mansy, IEEE Electron Device Letters, 25, 191 (2004).
Ashley, A. B. Dean, C. T. Elliott, R. Jefferies, F. Khaleque, and T. J. Phillips,
IEDM Technical Digest, 751, (1997)
http://www.intel.com/technology/mooreslaw/index.htm
R. Chou, INFOS 2005 presentation
T. Ashley, A. R. Barnes, L. Buckle, S. Datta, A. B. Dean, M. T. Emeny, M.
Fearn,D. G. Hayes, K. P. Hilton, R. Jefferies, et al., in 2004 7th International
Conference on Solid-State and Integrated Circuits Technology Proceedings, Vol.
3, 2253 (2005)
N. Yokoi, H. Andoh, and M. Takai, Appl. Phys. Lett., 64, 2578 (1994)
M. G. Kang, H. H. Park, and H. Kim, Appl. Phys. Lett., 80, 2499 (2002)
C. L. Chen, L. J. Mahoney, M. J. Manfra, F. W. Smith, D. H. Temme, and A. R.
Calawa, IEEE Electron Device Lett., 13, 335 (1992)
M. Hong, J. Kwo, A. R. Kortan, J. P. Mannaerts, and A. M. Sergent, Science,
283,1897 (1999)
H. Simchia, Sh. Bahreani, and M. H. Saani, Eur. Phys. J. Appl. Phys., 33, 1
(2006)
P. John, T. Miller, and T. C. Chiang, Phys. Rev. B, 39, 1730 (1989)
M. O. Schweitzer, F. M. Leibsle, T. S. Jones, C. F. McConville, and N. V.
Richardson, Semicond. Sci. Technol., 8, S342 (1993)
R. Tessler, R. Akhvlediani, R. Edrei, O. Klin, S. Greenberg, E. Weiss, C. Saguy,
and A. Hoffman, Appl. Phys. Lett., 88, 031918 (2006)
A. Rastogi and K. V. Reddy, Thin Solid Films, 270, 616 (1995)
J. D. Langan and C. R. Viswanathan, J. Vac. Sci. Technol., 16, 1474 _1979_
F. Khaleque, Electron. Lett., 31, 500 (1995)
B. D. Liu and S. C. Lee, Appl. Phys. Lett., 63, 3622 (1993)
H. C. Lin, P. D. Ye, and G. D. Wilk, Appl. Phys. Lett., 87, 182904 (2005)
Y. Xuan, H. C. Lin, and P. D. Ye, ECS Trans., 3 (3) , 59 (2006)
M. L. Huang, Y. C. Chang, C. H. Chang, Y. J. Lee, P. Chang, J. Kwo, T. B. Wu,
and M. Hong, Appl. Phys. Lett., 87, 252104 (2005)
C. H. Chang, Y. K. Chiou, Y. C. Chang, K. Y. Lee, T.-D. Lin, T. B. Wu, J. Kuo,
and M. Hong, Appl. Phys. Lett., 89, 242911 (2006)
P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H. J. L. Gossmann, M. Hong, K. Ng, and
J. Bude, Appl. Phys. Lett., 84, 434 (2004)
F. Maria, F. Micea, D. T. Jayne, M. Goradia, and C. Goradia, Surf. Interface
Anal., 15, 641 (1990)
Y. C. Chang, M. L. Huang, K. Y. Lee, Y. J. Lee, T. D. Lin, M. Hong, J. Kwo, T. S. Lay, C. C. Liao and K. Y. Cheng, Appl. Phys. Lett. 92, 072901 (2008)
C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M.
Milojevic, B. Lee, 2 F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, J. Kim and R.
M. Wallace, Appl. Phys. Lett, 92, 071901 (2008)
W. Kern, D.A. Poutinen, RCA Rev. 31, 187 (1970)
W. Kern, J. electrochem. Soc, 137, 1887 (1990)
B. D. Luft, L. B. Khusid, M. L. Yassen, Yu. S. Milyavskii, Inorg. Mater. 20,
1087 (1984)
A. J. Bosch, R. G. van Welzonis, O. F. Z. Sehanen, J. Appl. Phys. 58, 3434
(1985)
M. Hong, M. Passlack, J. P. Mannaerts, J. Kwo, S. N. G. Chu, N. Moriya, S. Y.
Hou, and V. J. Gratello: J. Vac. Sci Technol. B 14, 2297 (1996)
M. Hong, J. Kwo, A. R. Kortan, J. P. Mannaerts, and A. M. Sergent: Science, 283, 1987 (1999)
C. H. Chang, Y. K. Chiou, Y. C. Chang, K. Y. Lee, T. D. Lin, T. B. Wu, M. Hong, J. Kwo, Appl. Phys. Lett , 89, 242911 (2006)
http://www.mems-exchange.org/MEMS/processes/deposition.html
莊達人, “VLSI製造技術” 高立圖書
http://www.mems-exchange.org/MEMS/processes/deposition.html
許家旺, “In-situ 電漿表面處理對原子層化學氣相沉積Al2O3、HfO2高介電薄
膜應用在奈米尺度世代DRAM影響之研究”, 清華大學碩士論文 (2006)
Szu-Wei Huang and Jenn-Gwo Hwu, IEEE Trans. Elec. Dev. 50, 1658 (2003)
James D. Plummer, Michael K. Deal, Peter B. Griffin, “Silicon VLSI
Technology Fundamentals, Practice and Modeling”, published by Prentice Hall
Electronics and VLSI Series
Toshiro Maruyama, and Susumu Arai, Appl. Phys. Lett. 60, 322 (1992)
J. S. Kim, H. A. Marzouk, P. J. Reucroft, J. D. Roberision, and C. E. Hamrin, Jr.,
Appl. Phys. Lett. 62, 681 (1993)
H. O. Pierson, “Handbook of Chemical Vapor Deposition Principles, Technology
and Application”, Noyes Publications U.S.A., (1995)
李清楠, “下電極材料對原子層化學氣相沉積Al2O3高介電薄膜櫻用在奈米尺
度世代DRAM影響之研究”, 清華大學, 碩士論文 (2005)
G. S. Higashi, and C. G. Fleming, Appl. Phys. Lett. 55, 1963 (1989)
Yuniarto Widjaja, Charles B. Musgrave, Appl. Phys. Lett. 80, 3304 (2002)
Martin M. Frank, Yves J. Chabal and Glen D. Wilk, Appl. Phys. Lett. 82, 4758
(2003)
Suvi Haukka, Eeva-Liisa, and Toumo Suntola, Appl. Surf. Sci. 82/83, 548-552
(1994)
http://www.cambridgenanotech.com/index.php
T. Hori, Gate dielectrics and MOS ULSIs: principle, technologies, and
applications, Springer, Berlin, p8, 45 (1997)
W. E. Spicer, P. W. Chye, P. R. Skeath, C. Y. Su, and I. Landau, J. Vac. Sci.
Technol. 16, 1422 (1979)
S. Arabasz, E. Bergignat, G. Hollinger and J. Szuber, Vacuum. 80, 888 (2006)
V. N. Bessolov, E. V. Konenkova and M. V. Lebedev, J. Vac. Sci. Technol. B 14,
2761 (1996)
Y. Dong, X. M. Ding, X. Y. Hou, Y. Li and X. B. Li, Appl. Phys. Lett. 77, 3839
(2000)
W. K. Liu, W. T. Yuen, R. A. Stradling, J. Vac. Sci. Technol. B, 13 (4), 1529
(1995)
R. P. Vasquez, B. F. Lewis, F. J. Grunthaner, J. Appl. Phys. 54 (3), 1365 (1983)
W. K. Liu, M. B. Santos, J. Vac. Sci. Technol. B. 14(2), 647 (1996)
T. S. Jones, M. Q. Ding, N. V. Richardson, C. F. McConville, Sur. Sci. 247, 1
(1991)
Z. C. Feng, H. Gong, W. J. Choyke, N. J. Doyle, R. F. C. Farrow, J. Mater. Sci.:
Mater. Electron. 7, 23 (1996)
In2O3 will decompose into nonvolatile InO if heated at temperatures above 500
°C under vacuum,’’ see Treatise on Iorganic Chemistry by H.Remy (Elsevier, New York, 1956), Vol. 1.
F. D. Auret, J. Electrochem. Soc. 131, 2115 (1984)
J. C. Bean, G. E. Becker, P. M. Petroff, and T. E. Seidel, J. Appl. Phys. 48, 907
(1977)
Y. D. Zheng, Y. H. Chang, B. D. McCombe, R. F. C. Farrow, T. Temofomte, and
F. A. Shirland, Appl. Phys. Lett. 49, 1187 (1986)
L. Haworth, J. Lu, D. I. Westwood, J. E. MacDonald, Appl. Sur. Sci. 166,
253-258 (2000)
H. Simchi, Sh. Bahreani, and M. H. Saani, Eur. Phys. J. Appl. Phys. 33, 1-4
(2006)
Faur M., Faur M., Jayne D.T., Goradia M., Goradia C. Surf. Interface Anal. 15,
641 (1990)
Izquierdo R., Sacher E., Yelon A. Appl. Surf. Sci. 40, 175 (1989)
Y. C. Chang, M. L. Huang, K. Y. Lee, Y. J. Lee, T. D. Lin, M. Hong,J. Kwo, T.
S. Lay, C. C. Liao and K. Y. Cheng, Appl. Phys. Lett. 92, 072901 (2008)
D. G. Hendershot, J. C. Pazik, and A. D. Berry, Chem. Mater. 4, 833 (1992)
Y. Bu and M. C. Lin, A. D. Berry and D. G. Hendershot, J. Vac. Sci. Technol. A
13, 230 (1995)
J. D. Langan and C. R. Viswanathan, J. Vac. Sci. Technol., 16, 1474(1979)
F. Khaleque, Electron. Lett. 31, 500 (1995)
B. D. Liu and S. C. Lee, Appl. Phys. Lett., 63,3622 (1993)
B. Ullrich, F. Kuchar, R. Meisels, F. Olcaytug, and A. Jachimowicz, Thin Solid
Films, 168, 157 (1989)
M. M. Frank, G. D. Wilk, D. Starodub, T. Gustafsson, E. Garfunkel, Y. J. Chabal, J.Grazul, and D. A. Muller, Appl. Phys. Lett., 86, 152904 (2005)
N. L. Cohen, R. E. Paulsen, and M. H. White, IEEE Trans. Electron Devices, 42,
2004 (1995).
A. Etchells and C. W. Fischer, J. Appl. Phys. 47, 4605 (1976)
C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M.
Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, J. Kim, and R. M. Wallace,
Appl. Phys. Lett. 91, 163512 (2007)
D. Shahrjerdi, D. I. Garcia-Gutierrez, T. Akyol, S. R. Bank, E. Tutuc, J. C. Lee,
and S. K. Banerjee, Appl. Phys. Lett. 91, 193503 (2007)
H. D. Barber and E. L. Heasell, J. Appl. Phys. 36, 176(1965)
Donghun Choi, James S. Harris, Maitri Warusawithana and Darrell G. Schlom,
Appl. Phys. Lett. 90, 243505 (2007)
Chao-Ching Cheng, Chao-Hsin Chien, Guang-Li Luo, Chun-Hui Yang,
Ching-Chih Chang, Chun-Yen Chang, Chi-Chung Kei, Chien-Nan Hsiao, and
Tsong-Pyng Perng, J. Appl. Phys. 103, 074102 (2008)
C. W. Wilmsen, J. Vac. Sci. Technol., 13 (1976) 64
James C. Kim, IEEE. Transactions on parts, hybrids and packaging, Vol.
PHP-10, No.4, December (1974)
鄭智元, “銻化銦薄膜之電子特性與微觀組織之研究”, 中山大學, 碩士論文
(2002)