臺灣博碩士論文加值系統

This thesis is on the preparation of Al2O3 thin films on InSb substrate by atomic layer deposition (ALD) using trimethyl-aluminum as the metal precursor. Two different surface pre-treatments are introduced before Al2O3 deposition: TMA/Ar pulse and chemical etching with CP4A. The cleaning effects of three pre-treatments to form well-defined interface are demonstrated. Chemical compounds retained at the interface after the different cleaning process are identified by XPS and an in-situ cleaning mechanism based on a ligand exchange reaction is proposed.
Then, the electrical properties of Al2O3 film deposited on InSb with different surface condition are studied. The J-Vg relation exhibits the good insulator property (~10-8 to 10-7 A/cm2 within ±4V) and the C-V characteristics at 77k reveal the satisfactory performance of the MOS structure. An improvement of the electrical properties from the cleaning treatments is clearly demonstrated. Rapid thermal annealing (RTA) before metallization was also carried out in this work, but the electrical properties become degraded which is attributed to the generation of interface states by the RTA treatment.

Chapter 1 Introduction 1
1.1 Introduction 1
1.2 Research Motivation 4
1.3 Research Objective 6
Chapter 2 Literature Review 7
2.1 Introduction of III-V semiconductor in MOSFET 7
2.2 High-k oxide Deposition 10
2.2.1 Physical Vapor Deposition 10
2.2.2 Chemical Vapor Deposition 12
2.2.3 Chemical Solution Deposition 15
2.3 Atomic Layer Deposition 15
2.3.1 ALD mechanism,,, 15
2.3.2 Strength and Shortcoming 20
2.4 Dielectric Properties 22
2.4.1 Dielectric constant 22
2.4.2 Dielectric strength 26
2.5 Leakage current Mechanism 29
2.6 Surface Passivation of InSb 36
2.6.1 Removal of InSb native oxides 36
2.6.2 Interfacial cleaning effect of ALD on III-V substrate 38
Chapter 3 Methods and Experiments 40
3.1 Experimental details and procedures 40
3.1.1 Process flow 40
3.1.2 Analysis and measurements 50
Chapter 4 Results and Discussion 53
4.1 The cleaning effect of different surface treatments 53
4.1.1 Surface morphology 53
4.1.2 Removal of native oxides 62
4.2 HRTEM image analysis after ALD-Al2O3 deposition 69
4.3 XPS spectra analysis after ALD-Al2O3 deposition 71
4.3.1 Interfacial cleaning effect 71
4.3.2 Ligand exchange reaction 76
4.4 Electrical properties analysis 80
4.4.1 J-Vg measurements 80
4.4.2 The leakage current mechanisms 81
4.4.3 C-Vg measurements 85
4.5 The influence of rapid thermal annealing of Al2O3/InSb 89
4.5.1 C-V characteristics of RTA process in different atmosphere 89
4.5.2 J-Vg relation of RTA process in different atmosphere 92
4.5.3 Electrical properties of RTO treatment with different time 94
Chapter 5 Conclusion 97
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