臺灣博碩士論文加值系統

本論文分為兩個重點，第一個是以矽化鍺堆疊在電荷-缺陷型式
快閃記憶體之穿隧氧化層，研究這樣的結構對於元件工作特性所造成
的一些影響，在這個部分我們分為幾個部份作為探討主題，首先探討
的是堆疊矽化鍺濃度對於元件效能的影響，接著是堆疊材料不同對於
工作效能的影響，分別就三種不同的半導體材料做研究，分別是矽、
矽化鍺以及砷化鎵。
另外，由於矽化鍺堆疊在電荷-缺陷型式快閃記憶體之穿隧氧化
層中勢必造成穿隧氧化層一分為二，也就是說載子必須經過兩次穿隧
才能到達儲存層，所以堆疊位置造成氧化層分配對於穿隧效果的影響
是我們下一個研究的主題。隨著時代演進，元件微縮是不可避免的，
所以我們也研究短通道時我們的元件工作效能是否會受到嚴重的影
響。
第二個重點我們將介紹以高介電材料堆疊作為電荷-陷阱型式儲
存之快閃記憶體的儲存層，在這部分我們將研究儲存層單層與雙層堆
疊結構在CHEI寫入時的一些電特性，並且就儲存層中電荷分佈做一些
簡單的探討。

摘要............................................. I
誌謝............................................ II
目錄............................................ IV
圖目錄.......................................... IX
表目錄......................................... XIX
第一章 序論...................................... 1
1.1 前言.............................................. 1
1.2 快閃記憶體面臨的問題[1] ........................... 2
1.4 文獻回顧......................................... 5
1.4.1 雙位元快閃記憶體 (2-Bit Flash) .............. 6
1.4.2 P 型通道電荷陷阱式快閃記憶體快閃記憶體...... 6
1.4.3 矽化鍺通道記憶體............................ 7
1.4.4 矽化鍺源/汲極異質介面電晶體................. 9
第二章 以電荷陷阱式快閃記憶體元件的基礎理論與基本
模擬之介紹............................................ 20
2.1 以電荷陷阱式快閃記憶體元件操作方法.............. 20
2.1.1 通道熱電子注入寫入......................... 20
2.1.2 通道熱載子注入的模型....................... 21
V
2.1.3 FN 穿隧寫入................................ 24
2.1.4 FN 穿隧抹除................................ 24
2.1.5 帶對帶穿隧引發熱載子寫入（BBHE） ........... 25
2.2 電荷陷阱式快閃記憶體記憶體元件可靠度特性........ 26
2.2.1 耐力....................................... 26
2.2.2 干擾....................................... 28
2.2.3 電荷保持................................... 29
2.3 模擬軟體介紹.................................... 30
第三章 電荷陷阱式儲存之快閃記憶體使用SiGe、Si 與GaAs
堆疊於穿隧氧化層之研究............................... 43
3.1 研究動機......................................... 43
3.2 不同濃度之矽化鍺堆疊於電荷陷阱式快閃記憶體的穿隧氧化
層.................................................. 44
3.2.1 N 通道電荷陷阱式快閃記憶體的CHEI 與FN 寫入特性
................................................. 45
3.2.2 N 通道電荷陷阱式快閃記憶體的抹除特性....... 47
3.2.3 P 通道電荷陷阱式快閃記憶體的BBHE 寫入特性.. 47
3.2.4 P 通道電荷陷阱式快閃記憶體抹除特性......... 48
3.2.5 N 通道電荷陷阱式快閃記憶體電荷保存力與P 通道電
VI
荷陷阱式快閃記憶體汲極干擾....................... 49
3.2.6 堆疊不同矽化鍺濃度於電荷陷阱式快閃記憶體穿隧氧
化層的結論....................................... 50
3.3 堆疊不同材料之應用............................... 50
3.3.1 N 通道電荷陷阱式快閃記憶體的CHEI 與FN 寫入特性
................................................. 50
3.3.2 N 通道電荷陷阱式快閃記憶體的抹除操作....... 51
3.3.3 BBHE 寫入操作.............................. 52
3.3.4 P-通道電荷陷阱式快閃記憶體抹除操作......... 52
3.3.5 N 通道電荷陷阱式快閃記憶體電荷保存力與P 電荷陷
阱式快閃記憶體汲極干擾........................... 52
3.3.6 堆疊不同矽化鍺濃度於電荷陷阱式快閃記憶體結論53
3.4 結論............................................. 54
第四章 電荷陷阱式快閃記憶體堆疊不同位置矽化鍺於穿
隧氧化層與短通道的研究............................... 65
4.1 研究背景與動機................................... 65
4.2 電荷陷阱式快閃記憶體不同位置的SiGe 堆疊於穿隧氧化層
.................................................... 66
4.2.1 N 通道電荷陷阱式快閃記憶體的CHEI 寫入特性.. 67
VII
4.2.2 N 通道電荷陷阱式快閃記憶體的抹除特性....... 67
4.2.3 P 通道電荷陷阱式快閃記憶體的BBHE 寫入特性.. 68
4.2.4 P 通道電荷陷阱式快閃記憶體抹除操作......... 69
4.2.5 N 通道電荷陷阱式快閃記憶體電荷保存力與P 通道電
荷陷阱式快閃記憶體汲極干擾....................... 70
4.2.6 堆疊矽化鍺於電荷陷阱式快閃記憶體穿隧氧化層的不
同位置對於工作效能的影響之結論................... 70
4.3 短通道效應....................................... 71
4.3.1 N 通道電荷陷阱式快閃記憶體的CHEI 寫入特性.. 71
4.3.2 N 通道電荷陷阱式快閃記憶體的抹除特性....... 71
4.2.3 P 通道電荷陷阱式快閃記憶體的BBHE 寫入特性.. 72
4.2.4 P 通道電荷陷阱式快閃記憶體抹除特性......... 73
4.2.5 N-Channel 電荷陷阱式快閃記憶體電荷保存現象與
P-Channel 電荷陷阱式快閃記憶體汲極干擾........... 73
4.2.6 堆疊矽化鍺於不同通道長度的電荷陷阱式快閃記憶體
的穿隧氧化層對於工作效能的影響之結論............. 74
4.3 結論............................................. 74
第五章 堆疊高介電材料於電荷陷阱式快閃記憶體元件電荷
儲存層的研究.......................................... 87
VIII
5.1 研究動機......................................... 87
5.2 單層高介電係數材料於電荷陷阱式快閃記憶體之電荷儲存層
.................................................... 88
5.2.1 CHEI 寫入特性.............................. 89
5.2.2 電荷隨時間在儲存層儲存的順序............... 89
5.2.3 通道FN 抹除操作............................ 90
5.2.4 單層高介電係數材料於電荷陷阱式快閃記憶體儲存層
工作性能之結論................................... 91
5.3 堆疊雙層高介電係數材料於電荷儲存層............... 91
5.3.1 堆疊雙層高介電係數於電荷陷阱快閃記憶體的CHEI 寫
入特性........................................... 91
5.3.2 堆疊雙層高介電係數於電荷陷阱式快閃記憶體的FN
抹除特性......................................... 93
5.3.3 電荷隨時間在儲存層儲存的順序............... 93
5.3.4 堆疊雙層高介電係數材料於電荷陷阱式快閃記憶體儲
存層工作性能之結論結論........................... 94
5.4 結論............................................. 95
參考資料.............................................. 109

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