1.台灣模具產發展現況,http://www.mtduo.com/chinese/presscent er/industryinfoview.shtml?docno=443。
2.生物程序工程暨最適化實驗室,http://www.che.ccu.edu.tw/~bio proc。
3.C. W. Wu, and L. S. Huang, “A novel micro-scale Recombining technique using lateral joining for a large-area molding with small features,” IEEE The Sixteenth Annual International Conference, 2003, pp. 622-625.
4.蔡金榮,「具對準功能之奈元件超晶圓尺寸模具製作」,國立台灣海洋大學機械與機電工程學系,碩士論文,2006。5.余志成,「結合非等向矽蝕刻與微電鑄於LCD導光板膜仁的製作」,第五屆海峽兩岸製造技術研討會,2006。
6.H. Kawata, M. Yasuda, and Y. Hirai, “Fabrication of Si mold with smooth sidewall by new plasma etching process,” Microelectronic Engineering, vol. 84, 2007, pp. 1140-1143.
7.精密蝕刻簡介,http://www.magicnet.com.tw/service/gemline/p 3.html。
8.T. A. Mai, and B. Richerzhagen, “New process for cutting 4th Generation OLED masks:Laser MicroJetR technology,” Proceedings of the Fourth International WLT-Conference, 2007.
9.k. Ogawa, “Method for producting metal mask and metal mask,” United States Patent, 2006.
10.正中科技,http://www.faithfulinc.com/tw/product/shaow%20ma sk.asp。
11.G. M. Kim, M. A. F van den Boogaart, and J. Brugger, “Fabrication and application of a full wafer size micro/nanostencil for multiple length-scale surface patterning,” Microelectronic Engineering, vol. 67-68, 2003, pp. 609- 614.
12.M. Graff, S. K. Mohanty, E. Moss, and A. B. Frazier, “Microste -nciling: A Generic Technology for Microscale Patterning of Vapor Deposited Materials,” Journal of Microelectromechanical Systems, vol. 13, 2004, pp. 956-962.
13.M. A. F. van den Boogaart, L. M. Doeswijk, and J. Brugger, “Silicon-Supported Membranes for Improved Large-Area and High-Density Micro/Nanostencil Lithography,” Journal of Microelectromechanical Systems, vol. 15, 2006, pp. 1663-1670.
14.M. A. F. van den Boogaarta, M. Lishchynskab, L. M. Doeswijka, J. C. Greerb, and J. Bruggera, “Corrugated Membranes for improved pattern definition with micro/nanostencil lithography,” Sensors and Actuators A, vol. 130-131, 2006, pp. 568- 574.
15.M. Pope, H. P. Kallmann, and P. Magnante, “Electroluminescence in Organic Crystals,” Journal of Chemical Physics, vol. 38, 1963, pp. 2042-2043.
16.C. W. Tang, and S. A. Vanslyke, “Organic electroluminescent diodes[J],” Applied Physics Letters, vol. 51, 1987, pp. 913-915.
17.C. B. Lee, A. Uddin, X. HU, and T. G. ANDERSSON, “Study of Alq3 thermal evaporation rate effects on the OLED,” Materials Science and Engineering B, vol. 112, 2004, pp. 14-18.
18.S. K. So, and W. K. Choi, “Interference effects in bilayer organic Light -emitting diodes,” Applied Physics Letters, vol. 74, 1999, pp. 1939-1941.
19.X. P Wu, and W. H Ko, “A Study on Compensating Corner Undercutting in Anisotropic Etching of (100) Silicon,” International Solid-State Sensors and Actuators Conference, 1987, pp. 126-129.
20.H. Sandmaier, H. L. Offereins, K. Kuhl, and W. Lang, “Corner Compensation Techniques in Anisotropic Etching of (100) Silicon Using Aqueous KOH,” International Solid-state Sensors and Actuators Conference, 1991, pp. 456-459.
21.B. Wacogne, R. Zeggari, Z. Sadani, and T. Gharbi, “A very simple compensation technique for bent V-grooves in KOH etched (100) silicon when thin structures or deep etching are required,” Sensors and Actuators A, vol. 126, 2006, pp. 264-269.
22.P. Enoksson, “New structure for corner compensation in anisotropic KOH etching,” Journal of Micromechanics and Microengineering, vol. 7, 1997, pp. 141- 144.
23.楊啟榮,陳柏穎,“Effects of Various Ion-Typed Surfactants on Silicon Anisotropic Etching Properties in KOH and TMAH Solutions”,中國機械工程學會第二十一屆全國學術研討會, 2004。
24.美國道康寧公司 Sylgard 184 使用技術手冊。
25.Silicon Wafer Surplus Brokers - NOVA Electronic Materials, http://www.novawafers.com/siliconSurplus.php。