本論文使用高溫爐在常壓下透過氣-液-固vapor-liquid-solid(VLS)機制成長硒化銦(In2Se3)奈米線；成功地在二氧化矽(SiO2)基板上成長出γ-In2Se3並量測其室溫的螢光訊號與拉曼光譜。該螢光峰值位於2.13 eV(10K)，半高寬達35.2 meV，其活化能約為20.7 meV。我們並發現，基板經過氧化處理後常壓成長的奈米線，喜歡沿著表面成長，隱含一種與氣-液-固vapor-liquid-solid(VLS)不同的製程機制，有待探討。
另外，我們也發現低壓製程時，在矽(Si)基板可成長出蜿蜒蜷曲的奈米線，螢光訊號位於1.77 eV，推測可能為κ-In2Se3的發光或是缺陷發光。
最後，做為一個初步嘗試，我們想要蒸鍍硒化銦(In2Se3)粉末在銅片上，看能否形成銅銦硒(CuInSe2)。結果顯示，在500 °C左右，X光能譜分析顯示三種成分最容易同時存在，但X光分析顯示，有許多雜相的存在，並未有預期的成果。檢討顯示，高溫爐中的殘留氧氣以及介面成份過少是問題所在。未來有待運用穿透式電子顯微鏡(Transmission electron microscopy，TEM)，並配合運用蒸鍍機對該製程加以探討。

The purpose of this thesis uses furnace to grow up indium selenium nanowires at atmospheric pressure in VLS mechanism succeed in growing up γ-In2Se3 nanowires on SiO2 and measured the room temperature PL and Raman spectra. The low temperature PL (10K) is located at 2.13 eV, and the full width at half maximum (FWHM) value of the PL main peak is 35.2 meV, and the activation energy is estimated to be about 20.7 meV. We found, the nanowires that grew up at atmospheric pressure after oxidation the substrate prefer to grow up along the surface, imply that a new mechanism is differ from VLS mechanism, need be researched.
In addition, we find the fabrication of nanowires at low pressure, the nanowire zigzags on the substrate, and the room temperature PL is located at 1.77 eV. It could be the PL signal of κ-In2Se3 or defect luminescence.
Finally, initial a attempt, we want to evaporate In2Se3 powder on copper sheet. See if the formation of CIS.
The result show that three elements exist easily about at 500 °C simultaneously, but there are many complicated compound at interface by XRD analysis. Our desire will not be satisfied.
It is the problem that there are too little composition at interface and residue oxygen in furnace. In the future, we expect make use of TEM, to cooperate with Evaporator.

目錄
致謝 I
Abstract III
目錄 IV
圖目錄 VII
第一章 緒論 1
第二章 基本原理 3
2-1 In2Se3材料特性 3
2-2 相關相變化奈米材料製程發展 4
2-3 氣液固相(Vapor-liquid-solid, VLS)成長機制 5
2-4 X-射線繞射量測 7
2-5-1 掃描式電子顯微鏡 9
2-5-2 X光能譜分析 11
2-6 光激螢光 13
第三章 實驗步驟與實驗設備 17
3-1 實驗流程與步驟 17
3-1-1 常壓In2Se3奈米線製作流程 17
3-1-2 加入金觸媒處理流程 21
3-1-3 低壓製備In2Se3奈米線流程 23
3-2 簡易製作CIS 24
3-3 實驗儀器簡介 26
3-3-1 高溫爐爐管系統 26
3-3-2 光激螢光系統 28
第四章 結果與討論 30
4-1 常壓下成長在二氧化矽(SiO2)基板上的In2Se3奈米線 30
4-1-1 掃描式電子顯微鏡分析 30
4-1-2 X光能譜分析儀分析 31
4-1-3 X-射線繞射量測分析 32
4-1-3 顯微拉曼光譜分析 34
4-1-4 光激螢光光譜分析 35
4-2 金觸媒的影響 38
4-3 低壓環境下成長的In2Se3奈米線 41
4-3-1 掃描式電子顯微鏡分析 41
4-3-2 X光能譜分析儀分析 42
4-3-3 X-射線繞射量測分析 44
4-3-4 顯微拉曼光譜分析 46
4-3-5 光激螢光光譜分析 48
4-4 蒸鍍In2Se3粉末製作CuInSe2 50
4-4-1 X-射線繞射量測與X光能譜分析 50
第五章 結論 54
參考文獻 55

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