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研究生:李育融
研究生(外文):Yu-Long Lee
論文名稱:寬能隙半導體:氮化鋁鎵和氮化銦鋁鎵之量測分析與研究
論文名稱(外文):Wide band gap semiconductors:measurement and analysis of AlGaN, InAlGaN
指導教授:馮哲川
指導教授(外文):Zhe-Chuan Feng
學位類別:碩士
校院名稱:國立臺灣大學
系所名稱:光電工程學研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2008
畢業學年度:96
語文別:中文
論文頁數:125
中文關鍵詞:nanocluster
外文關鍵詞:奈米聚集點
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本論文研究三族氮化物半導體的光學與電學性質,研究的樣品包括氮化鋁鎵薄膜結構及氮化銦鋁鎵薄膜結構,內容主要分為兩部份 :
(1)氮化鋁鎵三元薄膜結構的光電性質:
這部份我們主要探討氮化鋁鎵的光電性質。我們利用XRD,電子束電子顯微鏡, 電子束螢光等實驗,光學與結構特性的修正提供了一個直接的證據支持鎵奈米團是主導其發光來源,我們的結果對於將來光電元件發光效率的增加可提供一個重要的貢獻。

(2) 氮化銦鋁鎵四元薄膜結構的光電性質:
這部份我們主要探討氮化銦鋁鎵的光電性質。但從過去的文獻中得知,氮化銦鋁鎵的量子發光效率比氮化鋁鎵來的好,但是其物理成因並不是十分清楚。首先, 我們利用光激螢光光譜與拉曼光譜的量測,來證明量子發光效率變好是因為似氮化銦鎵合金團的形成。之後,我們更進一步的量測掃描式電子顯微鏡影像,陰極螢光光普與能量分散光譜。從這些量測中,我們得到直接的證據,證明此四元化合物高效率螢光發光是來自於似氮化銦鎵合金團。由於激子被侷限在這些奈米尺度的量子合金團中,因此發光效率有所提高。接著我我們進行光電導的量測,針對持續光電導的衰減動力學分析,並結合光激螢光光譜與光激螢光激發譜,得到此四元化合物所引起的侷限能級深度。
Contents
致謝.................................................Ι
摘要.................................................Ⅱ
ABSTRACT.............................................Ⅳ
Contents............................................. V
List of figures....................................ⅤIII

Chapter 1 Introduction...................................1
1.1 III-Nitride semiconductors............................1

1.2 Properties of alloys..................................2
1.2.1 AlGaN alloy.....................................2
1.2.2 InAlGaN quaternary alloy........................5
References................................................6

Chapter 2 Experimental Details...........................9
2.1Photoluminescence(PL)..................................9
2.1.1 PL Experimental Setup..........................15
2.2 Photoluminescence Excitatio..........................16
2.2.1 Photoluminescence Excitation Experimental setup..17
2.3 X-ray diffraction(XRD)...............................18
2.4 Raman scattering.....................................21
2.5 Scanning Electron Microscopy (SEM)...................27
2.6 Energy dispersive X-ray spectrometry (EDS)...........28
2.7 Persistent photoconductivity (PPC)...................29
References...............................................33

Chapter 3 Optical Structural Properties and Experimental
Procedures of AlGaN grown by MOCVD.........37
3.1 Sample growth........................................37
3.1.1 Introduction....................................37
3.1.2 Experimental setup..............................38
3.1.3 Results and discussion..........................38
3.1.4 Conclusion......................................43
3.2 X-ray Diffraction Measurement........................44
3.3 SEM and EDS Measurement..............................45
3.4 PL Experimental Results..............................48
References...............................................57

Chapter 4 Optical Structural Properties and Experimental Procedures of InAlGaN grown by MOCVD.....................60
4.1 Sample growth........................................60
4.1.1 Introduction..................................60
4.1.2 Experimental setup............................61
4.1.3 Results and discussion........................64
4.1.3.1 Mechanism of enhanced luminescence........64
4.1.3.2 Nanoclusters induced enhancement of
luminescence.............................69
4.1.3.3 Persistent photoconductivity..............73
4.1.4 Conclusion....................................78
4.2 X-ray Diffraction Measurement........................80
4.3 SEM and EDS Measurement..............................81
4.4 PL Experimental Results..............................84
References...............................................93

Appendix.................................................97
[1] InAlGaN
[2] AlGaN
[3] 4H-SiC
[4] ZnO
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