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研究生:賴奎甫
研究生(外文):Kuei-Fu Lai
論文名稱:鍺銻碲奈米相變化薄膜上之奈米記錄點研究
論文名稱(外文):Formation of Nano Recording Marks on Crystalline Ge2Sb2Te5 Phase-change Nano Thin Film
指導教授:蔡定平
指導教授(外文):Din Ping Tsai
學位類別:碩士
校院名稱:國立臺灣大學
系所名稱:物理研究所
學門:自然科學學門
學類:物理學類
論文種類:學術論文
論文出版年:2008
畢業學年度:96
語文別:中文
論文頁數:82
中文關鍵詞:相變化記錄點光儲存
外文關鍵詞:phase-changerecording marksoptical data storage
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本論文中,將使用讀取、寫入波長分別為633nm及658nm之紅光雷射泵探系統(靜態測試儀)研究不同膜層結構的結晶態相變化奈米薄膜上之記錄點形式,並討論在不同入射雷射功率及雷射脈衝時間條件下,在相變化薄膜上形成記錄點形式之變化。經由原子力顯微儀(Atomic Force Microscope)對記錄點進行掃探所得到的表面形貌資訊,可以充分且完整的了解相變化薄膜上記錄點形成的過程。從測量結果可以歸納出記錄點光學影像、反射率變化和表面形貌變化過程彼此間互相對應的關係。最後,本研究中的相變化薄膜之特殊光熱效果也可應用於未來的奈米光子學範疇中。
In this thesis, we study the formation of recording marks on crystalline Ge2Sb2Te5 phase-change nano thin film. We use an atomic force microscopy (AFM) and optical pump-probe system to investigate the topographic change and optical-thermal dependence of marks formation. From the experimental results, the process of recording mark formation is well studied in both incident power and pulse duration aspects. Through the complete experiments, the arbitrary pattern of recording marks can be written on phase-change material precisely by changing layered structure and tuning incident power and pulse duration. The special thermal-optical effect of phase-change material can be applied to the nano photonics in future.
中文摘要 I
Abstract II
致謝 III
目錄 V
圖目錄 VIII
表目錄 XIV
第一章 緒論 1
1-1 前言 1
1-2 相變化材料 1
1-2-1 相變化過程 1
1-2-2 結晶過程類型 4
1-2-3 相變化材料演進 6
1-2-4 相變化材料Ge2Sb2Te5結構 8
1-3 相變化光碟片簡介 14
第二章 實驗儀器基本架構與原理 18
2-1 前言 18
2-2 四靶濺鍍機 18
2-2-1 儀器簡介及用途 18
2-2-2 樣品製作參數 22
2-3 靜態測試儀 23
2-3-1 儀器簡介及用途 23
2-3-2 儀器架構與元件介紹 23
2-3-2-1 儀器架構 23
2-3-2-2 雷射光泵探系統主要光學元件介紹(依照光路順序排列) 26
2-3-2-3 校正工作(calibration) 31
2-3-2-4 雷射光初始化樣品的方法 32
2-3-2-5 光學寫入實驗流程 33
2-4 原子力顯微鏡 36
2-4-1 儀器簡介及用途 36
2-4-2 工作操作模式 37
第三章 實驗討論分析 40
3-1 前言 40
3-2 實驗參數 41
3-3 相變化記錄層實驗 45
3-3-1 單層 ZnS-SiO2薄膜實驗結果 45
3-3-2 雙層未包夾的相變化記錄層 47
3-3-2-1 cry-Ge2Sb2Te2膜厚為15nm實驗 47
3-3-2-1-1 實驗結果 48
3-3-2-1-2 不同型態記錄點的分類 49
3-3-2-1-3 記錄點型態與寫入功率關係 50
3-3-2-1-4 記錄點型態與作用時間關係 54
3-3-2-2 不同膜厚相變化記錄層實驗 61
3-3-2-2-1 不同膜厚相變化記錄層實驗結果 61
3-3-2-2-2 不同膜厚相變化記錄層上記錄點分類 62
3-3-2-2-3 改變不同膜厚記錄點與寫入功率和雷射脈衝時間的關係 64
3-3-2-2-4 記錄點型態與記錄層膜厚的關係 64
3-3-3 三層包夾的相變化記錄層 66
3-3-3-1 比較有無介電層包夾的相變化記錄層 66
3-3-3-2 比較不同上介電層膜厚相變化記錄層 70
第四章 結論 75
參考文獻 77
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