臺灣博碩士論文加值系統

本研究是探討硼離子在第二和第三兩游離閾之間的光游離過程，其光子能量範圍為25.16至31.15電子伏特。理論上用「多組態相對論性混相近理論(Multiconfiguration Relativistic Random-Phase Approximation, MCRRPA )」來計算硼離子的雙激發共振態的光游離散射截面積，及光電子角分佈與極化參數。
在此光子能量範圍裡，光電子譜呈現「五個雷德堡系列」的自游離共振結構。將詳細探討這些共振附近角分佈和極化參數的變化，以及其與共振位置與共振寬度的關係，並且提供將來實驗探討的面向。

We have investigated photoionization of ground state of Be-like, B+, ions the photon energy range 25.16 to 31.15 eV. Calculation of cross section for double-excitation auto ionization resonances of beryllium-like B+ ion using the multiconfiguration relativistic random-phase approximation ( MCRRPA ) are performed. Precise energies and widths of all five Rydberg series of doubly-excited states are given in the photon-energy region between second and third ionization and Experimental works and excellent agreement is also shown.

口試委員會審定書 i
中文摘要 iii
英文摘要 v
第一章　簡介 001
第二章　MCRRPA理論 011
　　第一節　MCRRPA理論的一般性推導 011
　　第二節　MCRRPA軌道方程式 017
　　第三節　光電子的角分佈與自旋極化參數 023
第三章　結果與討論 027
　　第一節　硼離子光游離過程 027
　　第二節　硼離子光游離總散射截面 035
　　第三節　硼離子光游離參數 079
第四章　結論 111
參考文獻 121
附錄A　相對論性多通道量子虧損理論 125
附錄B　MCDF和MCRRPA的徑向方程式 129
附錄C　類鈹硼離子雙激發共振態的命名 133
附錄D　共振能量與共振寬度的逼近 137
附錄E Beulter-Fano Profile 的分析 139

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