臺灣博碩士論文加值系統

本論文中，我們研究且發展出薄膜鍺金氧半元件之結構。利用聰明切的技術將它轉移至聚亞醯胺軟性基板上，並且對此一型態之元件性能做出各項探討及分析。為了瞭解薄膜鍺金氧半結構於軟性電子元件之發展及應用，我們已將此結構應用於可撓式光偵測器、光生伏打電池及場效電晶體等三種重要的半導體元件上。
此外，我們建構了一種外加應變的裝置，對此元件施加單軸之伸展應變，使得薄膜鍺的能隙急遽變小，進而利用拉曼頻譜的紅位移得到應變量，並且觀察施加應變下對其光響應的影響。從此可發現到1.5微米的紅外光波段對鍺的能隙變小時會有相當大的提升，這現象驗證了鍺之光學吸收係數的特性曲線。甚至可利用溫度的改變，對此偵測器做出適當之應用。
最後，再由商業套裝軟體ANSYS模擬光偵測元件結構受到機械應變時的特性變化，進而瞭解薄膜鍺受到外加應力的情形。另外希望能將此元件的製程技術應用於薄膜矽上，加以降低鍺通道場效電晶體的製程成本，以符合現今軟性電子的需求及半導體科技之整合。

In this thesis, we have demonstrated thin film Ge MOS devices on flexible substrate as polyimide using the technique of Smart-CutTM. Furthermore, we also analysis and study various properties of this type device. In order to realize the applications of thin film Ge MOS structure of flexible electronics, we have developed flexible photodetector, photovoltaic cell, and pMOSFETs.
Moreover, new mechanic setup is constructed to apply external mechanical uniaxial tensile strain. The strain leads bandgap shrinkage. The red-shift of Raman spectroscopy can be used to extract strain. The relation between responsivity enhancements versus strain is discussed, and this phenomenon verifies the characteristic curve of optical absorption coefficient of Ge. Otherwise, we can be utilized the temperature variation to perform the GOP MOS detectors for sensing application.
Finally, we utilize ANSYS to simulate GOP photodetector with mechanical uniaxial tensile strain. Furthermore, we also hope this process can be used on Silicon-on-Polyimide substrate to reduce the cost of GOP pMOSFETs that will be more conformed to current semiconductor industry.

Contents

List of Tables V
List of Figures VI

Chapter 1 Introduction
1.1 Background and Motivation 1
1.2 Organization 4
References 6

Chapter 2 Fabrication of Ge-on-Polyimide MOS Devices
2.1 Introduction 7
2.2 GOP Photodetector 8
2.2.1 Low Temperature Wafer Bonding Using SU-8 2100 Photo-resist 8
2.2.2 Device Layer Structure Analysis 14
2.2.3 Current Reduction by Metal Gate and Device Fabrication 17
2.3 GOP Dispensing Indium Tin Oxide Photovoltaic Cell 20
2.3.1 Low Temperature Wafer Bonding Dispensing Indium Tin Oxide 20
2.3.2 Device Layer Structure Analysis 23
2.3.3 Device Fabrication 25
2.4 GOP Schottky-barrier pMOSFETs 26
2.4.1 The TEM and Surface Roughness Analysis 26
2.4.2 One Mask Process Flow 29
2.4.3 Oxide Formation and Lithography 31
2.4.4 Gate Metal Deposition and Lift-off 35
2.4.5 Oxide Etching 37
2.4.6 Source/Drain Metal Deposition 38
2.5 Conclusion 39
References 39

Chapter 3 Performance of Ge-on-Polyimide MOS Devices
3.1 Introduction 41
3.2 Responsivity of GOP Photodetector 41
3.2.1 The Reflective Measurement and Results 41
3.2.2 The Physical Meaning 48
3.3 Conversion Efficiency η of GOP Dispensing ITO Photovoltaic Cell 52
3.4 I-V Characteristics of GOP Schottky-barrier pMOSFETs 56
3.5 Conclusion 61
References 62

Chapter 4 Flexibility Analysis
4.1 Introduction 63
4.2 Experiment Procedure and Strain-induced Effects 63
4.2.1 Experiment Installation of The Bending GOP Structure63
4.2.2 Strain-induced Raman Spectroscopy65
4.2.3 Strained GOP Photodetector 67
4.2.4 Temperature Sensing Application73
4.3 Mechanical Bending Structure Simulation Analysis with ANSYS 75
4.4 Conclusion 77
References 78

Chapter 5 Summary and Future Work
5.1 Summary 79
5.2 Suggestions for Future Work 81
References 84

Chapter 1
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Chapter 2
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Chapter 3
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Chapter 4
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Chapter 5
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