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研究生:蔡青凌
研究生(外文):Cing-Ling Tsai
論文名稱:應用原子力顯微鏡於矽基材進行奈米氧化術之探討
論文名稱(外文):The Study of Nano-Oxidation on Si Substrate by AFM Lithography
指導教授:周賢鎧
指導教授(外文):Shyankay Jou
學位類別:碩士
校院名稱:國立臺灣科技大學
系所名稱:自動化及控制研究所
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2008
畢業學年度:96
語文別:中文
論文頁數:111
中文關鍵詞:原子力顯微鏡氧化術奈米氧化物
外文關鍵詞:AFMLithographySiNano-Oxidation
相關次數:
  • 被引用被引用:5
  • 點閱點閱:155
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  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0
本文利用原子力顯微鏡之奈米氧化術,直接在單晶矽表面上產生局部陽極氧化(Tip-Induced Local Anodic Oxidation),並以導電探針施加偏壓的方式來進行奈米氧化線及奈米仿圓形圖案加工,並觀察其氧化物的成長情形。
在奈米氧化線方面,控制參數為探針移動速率、電壓形式、相對濕度率,另一方面在奈米仿圓形圖案方面,控制參數為電壓、邊數、重複次數。實驗後發現隨著電壓的增加,氧化線成長的高度也會隨之增加,且成正比關係,但在移動速率愈快時氧化物之高度反而越低且線寬越窄。
Using Atomic Force Microscopy Lithography (AFM Lithography) tip-induced local anodic oxidation on the native SiO2 layer of Si is performed to fabricate oxide patterns. The AFM tip applied with a positive bias can produce the oxide patterns in nano-scale.
In nano-oxidation line, We can control the height by means of various tip moving rate, voltage and relative humidity to understand the growth rate of anodic oxidation. Another in nano-oxdation of circle like that adjust the height by means of various voltage, sides and repeat frequency. From the experiment result, we find that the oxide height increase while voltage increase. But the height of oxide will decrease and the width of oxide become narrow while tip moving rate is increase.
第一章、緒論
1.1 前言
1.2 文獻回顧
1.3 研究動機
第二章、原子力顯微鏡之介紹
2.1 設備裝置
2.1.1 SPM Head
2.1.2 Vacuum Power Switch
2.1.3 X-Y Stage
2.2 基本原理
2.3 掃描方式
2.3.1 接觸式原子力顯微鏡( Contact Mode AFM )
2.3.2 非接觸式原子力顯微鏡( Non-Contact Mode AFM )
2.3.3 輕敲式原子力顯微鏡( Tapping Mode AFM )
2.3.4 综合比較
第三章、奈米氧化術
3.1 奈米氧化術之原理
3.2 場致氧化效應
3.3 Cabrera-Mott理論
3.4 修正Cabrera-Mott 理論
第四章、實驗方法及規劃
4.1 D3100 AFM Contact Mode 操作方式
4.2 數據分析
4.3 奈米氧化之程式流程
4.4 實驗規劃
第五章、結果與討論
5.1 製程參數對奈米線高度的影響
5.1.1 探針移動速率
5.1.2 電壓型式之影響
5.1.3 相對濕度
5.2製程參數對奈米圓的影響
5.2.1 單晶矽形式
5.2.2 仿圓形圖案之邊數
5.2.3 重複次數
第六章、結論及未來展望
6.1 總結
6.2 未來展望
參考文獻
作者簡介
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