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研究生:林昶志
研究生(外文):Chang-Chih Lin
論文名稱:100℃以下製作有機薄膜電晶體特性之研究
論文名稱(外文):Study on Characteristics of Pentacene-Based Thin-Film Transistors fabricated below 100 ℃
指導教授:范慶麟
指導教授(外文):Ching-Lin Fan
學位類別:碩士
校院名稱:國立臺灣科技大學
系所名稱:電子工程系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2008
畢業學年度:96
語文別:中文
論文頁數:86
中文關鍵詞:有機薄膜電晶體六苯環晶粒大小介面缺陷狀態密度疏水性親水性
外文關鍵詞:organic thin film transistorspentacenegrain sizeinterface traps state densityhydrophobichydrophilic
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近十年來,有機薄膜電晶體已有顯著的發展且現在很有可能應用在許多地方。與矽為基礎的無機薄膜電晶體比較,有機薄膜電晶體在製作及應用上,基本提供兩個主要的優點:低溫需求及低成本,而低溫製程其中一個考量的重要因素,就是如何在低溫下成長出閘極絕緣層,這是一項嚴峻的挑戰。
在我們的研究中,利用中空陰極化學氣相沉積低溫二氧化矽薄膜在重摻雜的矽基板上,當作有機薄膜電晶體的閘極絕緣層。雖然這層二氧化矽與高密度電將輔助化學氣相沉積相比,顯現較差的絕緣特性,使得薄膜電晶體的關閉電流(Ioff)上升,但他表面平坦且顯示疏水的性質,因此利用中空陰極化學氣相沉積二氧化矽薄膜上的五苯環(pentacene)晶粒大小會比在高密度電將輔助化學氣相沉積的晶粒來的大,這個現象導致中空陰極化學氣相沉積低溫二氧化矽的有機薄膜電晶體會有高的導通電流及載子移動率,因此我們的研究證明了80 ℃成長的二氧化矽不僅能用在有機薄膜電晶體上且還能提供優越的電晶體特性。
並且本實驗研究在不同量測環境下,對有機薄膜電晶體電性的影響,透過表面物性(AFM)及薄膜吸收光譜(FTIR)的分析,可以發現水氣確實蘊藏於pentacene內且造成劣化的主要原因,因此證明了水氣的含量對元件電性的重要。
Organic thin film transistors (OTFTs) have made impressive progress over the past decades, and it is now likely that OTFTs will find their applications in a number of ways. OTFTs basically provide two principal advantages over Si-based TFTs in processes and application: low thermal budget and low cost. One important factor for low temperature process may be how to fabricate a gate dielectric film at a low temperature. This is a difficult challenge.
We report on the fabrication of pentacene thin-film transistors (TFTs) with SiO2 films as the gate dielectric that has been deposited on a heavily doped Si-wafer by Hollow Cathode CVD at low temperature. Although the SiO2 was expected to show lower insulating properties than HDP-CVD SiO2, the surface properties exhibited smooth and a hydrophobic character. Therefore, the pentacene grain size on Hollow Cathode CVD SiO2 is much larger than HDP-CVD SiO2. Based on these arguments, it may result in OTFT using low-temperature hollow cathode CVD SiO2 with higher field mobility and on current. Our work demonstrates that 80 ℃-deposited SiO2 is not only promising gate dielectric material for organic TFTs, but also providing good transistors characteristic.
We also investigated the influence of the influence of different measuring environment on the electrical characteristics of pentacene-based thin film transistors. Through surface morphology analysis by atomic force microscopy (AFM) and absorption analysis by infrared (IR) spectroscopy, it was found that the adsorption of H2O on the pentacene layer was the main reason for the degradation. Therefore, we have demonstrated the number of the moisture is a important factor on the electrical characteristics of pentacene-based thin film transistors.
中文摘要 I
英文摘要 III
致謝 V
目錄索引 VI
圖 索 引 IX
表 索 引 XIII
第一章 概論 1
1.1 研究背景 1
1.2 研究動機與方向 4
1.3 論文大綱 5
第二章 有機薄膜電晶體介紹 7
2.1 有機半導體材料特性&介紹 7
2.1.1 Pentacene材料特性介紹 8
2.2 有機半導體導電機制 9
2.2.1 能帶理論 10
2.2.2 偏極子(polaron)和雙偏極子(bipolaron) 11
2.3 有機半導體傳導機制 12
2.3.1 Hopping Model 12
2.3.2 Multiple Trapping and Release Model 12
2.4 有機薄膜電晶體的操作模式 13
2.5 有機薄膜電晶體參數之粹取 16
2.5.1 載子移動率(Mobility μ) 16
2.5.2 臨界電壓(Threshold Voltage VT) 18
2.5.3 次臨界斜率(Subthreshold Slope S.S) 18
2.5.4 開關電流比(Ion/Ioff current ratio) 19
第三章 實驗方法與步驟 26
3.1 元件製作流程 26
3.2 元件結構 30
3.3 分析儀器簡介 30
第四章 低溫閘極絕緣層製作有機薄膜電晶體 36
4.1 使用中空陰極化學氣相沉積法成長低溫oxide 36
4.1.1 中空陰極化學氣相沉積法 36
4.1.2 薄膜成長步驟 37
4.1.3 HC-CVD成長oxide用在OTFT上 39
4.2 比較HC-CVD與HDP-CVD成長低溫oxide用在OTFT上 40
4.2.1 FTIR分析 40
4.2.2 Gate Current 分析 44
4.2.3 Contact angle measurement 分析 44
4.2.4 AFM分析 46
4.2.5 元件電性量測與分析 48
4.3 不同環境對有機薄膜電晶體劣化之研究 49
4.3.1 FTIR分析 49
4.3.2 AFM分析 50
4.3.3 元件電性量測與分析 51
第五章 結論與未來展望 75
5.1 結論 75
5.2 未來展望 77
參考文獻 78
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