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研究生:王誌賢
研究生(外文):Jhih-Sian Wang
論文名稱:覆晶式藍光發光二極體之元件設計與製程技術開發
論文名稱(外文):Design and Fabrication of Flip-Chip Blue Light Emitting Diodes
指導教授:李三良李三良引用關係
指導教授(外文):San-liang Lee
學位類別:碩士
校院名稱:國立臺灣科技大學
系所名稱:電子工程系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2008
畢業學年度:96
語文別:中文
論文頁數:75
中文關鍵詞:氮化鎵發光二極體覆晶
外文關鍵詞:GaNFlip-ChipLED
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  • 被引用被引用:1
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覆晶封裝技術為藍光發光二極體之主流技術,本論文以藍寶石基板之氮化鎵材料為主,開發覆晶式發光二極體製程技術為目的,可大幅提升氮化鎵發光二極體輸出功率與效率。
覆晶發光二極體必須達到低電阻與高反射率的P型歐姆接觸,所以在本論文中我們以Ni/Ag/Au的金屬組合作為P型氮化鎵電極,可達到良好的歐姆接觸,其特徵電阻可達到1.25E-5 Ω-cm2,在藍光波段中,使用Ni/Ag/Au的金屬組合其反射率可達80%左右。我們用此P型氮化鎵的金屬組合搭配覆晶封裝技術,成功製作出覆晶式發光二極體元件,能有效提升發光二極體輸出功率,與傳統式發光二極體相比較,可以提升2.5至3倍的輸出功率。
The flip-chip bonding technique is utilized widely in blue light-emitting diodes. The fabrication process for the GaN-based flip-chip light-emitting diodes on a sapphire substrate is proposed so that the output power and the efficiency of GaN lighting diodes are significantly enhanced. The flip-chip light-emitting diodes must achieve a low resistivity and high reflectivity p-type ohmic contact. The deployment of Ni/Ag/Au alloy shows a specific contact resistance as low as 1.25E-5 Ω-cm2. This Ni/Ag/Au alloy also provides the reflectivity as high as 80% optically in the blue light band.
By combining the p-type GaN metal contact with the flip-chip packing technique, a newly developed flip-chip bonded light-emitting diode is successfully demonstrated. The fabrication light-emitting diodes show an enhancement of at least of 250% in the extraction efficiency, compared to conventional light-emitting diodes.
摘要 I
Abstract II
目錄 III
圖表目錄 V
致謝 IX
第一章 導論 1
1-1 前言 1
1-2 研究目的及動機 8
1-3 論文架構 9
第二章 發光二極體原理與特性 10
2-1 發光二極體理論與發光效率 10
2-2 光輸出椎角 12
2-3 歐姆接觸原理 14
第三章 高反射P型氮化鎵歐姆接觸 18
3-1 N型氮化鎵歐姆接觸的選擇 18
3-2 反射式P型氮化鎵歐姆接觸及反射金屬的選擇 19
3-3 反射式P型氮化鎵歐姆接觸之半導體製程 23
3-4 反射式P型氮化鎵歐姆接觸與反射率的量測與特性 28
第四章 覆晶發光二極體元件製作與量測 39
4-1 覆晶技術的簡介 39
4-2 覆晶焊錫之選定 40
4-3 覆晶子基板之材料選擇 41
4-4 覆晶發光二極體元件之光罩設計 42
4-5 覆晶發光二極體製程 46
4-6 量測架構 54
4-7 覆晶發光二極體量測結果與討論 56
第五章 結論 63
5-1 成果與結論 63
5-2 未來方向 63
參考文獻 65
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