本論文針對氟化氪 (KrF)準分子雷射濺鍍技術，沉積Zr0.8Sn0.2TiO4 (ZST)高
介電材料於p-type 矽基板上，並應用於金屬-絕緣層-半導體 (MIS)結構之光偵測
器元件。主要是利用矽半導體對光子能量的吸收特性，進而產生電子-電洞對，
並討論不同光波段下，在外加電場影響而產生電子遷移現象，形成光電流。此
MIS 結構為易製作的堆疊結構，且容易與製程整合。

介紹ZST 基本性質及結構，及MIS 之光偵測原理，設定實驗製程參數，研
究雷射能量對ZST 薄膜成長速率之影響，分析ZST 薄膜微觀結構及表面粗糙度，
ZST 薄膜之折射係數、X 光繞射、拉曼光譜。並完成MIS 元件，量測光照下電
流-電壓、不同波長的光照下電流-電壓、電容-電壓、光響應度之光電特性研究，
可以做為未來發展以矽為基礎之光偵測器之參考。

In this thesis, we demonstrate the pulse laser deposition (PLD) of zirconium tin titanium oxide Zr0.8Sn0.2TiO4 (ZST) thin film on p-type Si(100) substrate by KrF Excimer Laser at room temperature. Deposition rate of ZST thin film at 0.3 Å/pulse has been achieved with laser fluences of 1500 mJ/cm2. Investigate the characteristics of using ZST Metal-Insulation-Semiconductor (MIS) device, which can provide photo detection by generating electron-hole pairs in the depletion region between the interface of ZST thin film and Si substrate.

X-ray diffraction (XRD), Raman spectroscopy, and scanning electron
microscopy (SEM), atomic force microscope (AFM) are used to study the effect of
the crystalline properties of the deposited films with various process parameters; such as laser fluence and annealing temperature. UV-Vis spectroscopy is used to characterize the optical properties of the deposited ZST films. In addition, I-V and C-V measurements were used to characterize the dielectric performance of the deposited ZST film in a simple MIS device. We used to study the effect of photo-responsivity of the MIS device are presented. These results will provide reference for developing the Si-based photo-detector in the future.

目錄
論文審定書.....................................................1
誌謝...........................................................2
中文摘要.......................................................3
英文摘要.......................................................4
目錄...........................................................5
圖目錄.........................................................7
表目錄.........................................................13
第一章 緒論....................................................14
1-1 研究背景...................................................14
1-2 簡介高介電材料.............................................16
1-3 Zr0.8Sn0.2TiO4 (ZST)之基本性質及結構.......................19
第二章 金屬-絕緣層-半導體 (MIS)之光偵測原理....................23
第三章 準分子脈衝雷射濺鍍法 ...................................33
3-1 準分子脈衝雷射之工作原理...................................33
3-2 準分子脈衝雷射濺鍍法之介紹.................................37
第四章 Zr0.8Sn0.2TiO4 (ZST)薄膜準分子雷射濺鍍..................43
4-1 雷射能量對ZST 薄膜成長速率之影響...........................43
4-2 雷射能量對ZST 薄膜微觀結構及表面粗糙度之影響...............46
4-3 退火前後對ZST 薄膜微觀結構及表面粗糙度之影響...............63
4-4 雷射能量對ZST 薄膜折射率之影響及退火前後對ZST 薄膜折射
率之影響.......................................................68
4-5 ZST 薄膜之X 光繞射 (XRD) ..................................75
4-6 ZST 薄膜之拉曼光譜 (Raman Spectroscopy) ...................79
第五章 Zr0.8Sn0.2TiO4 (ZST)薄膜之MIS 元件製程..................82
5-1 MIS 元件製作流程之介紹.....................................82
5-2 矽晶片切割及清洗 (RCA Clean) ..............................84
5-3 矽半導體上鋁接觸電極之製作.................................86
5-4 熱退火處理 (RTA)之歐姆接觸電極.............................90
5-5 準分子脈衝雷射濺鍍ZST 薄膜.................................93
5-6 ZST 薄膜上鋁接觸電極之製作.................................95
第六章 MIS 元件之光電特性量測與分析............................96
6-1 電容-電壓 (C-V)特性之量測..................................96
6-2 電流-電壓 (I-V)特性之量測..................................99
6-3 光響應度 (Responsivity)特性之量測..........................110
第七章 結論與未來研究方向......................................117
參考文獻.......................................................119

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