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研究生:楊豐榮
研究生(外文):Fong-Rong Yang
論文名稱:藉由微波電漿束化學氣相沈積法可任意控制鑽石晶型方向性之研究
論文名稱(外文):A Study of Growing Diamond Films with Controlled Orientation by Microwave Plasma Jet CVD System
指導教授:林啟瑞林啟瑞引用關係蘇春熺
口試委員:陳貴賢林麗瓊
口試日期:2008-06-23
學位類別:碩士
校院名稱:國立臺北科技大學
系所名稱:機電整合研究所
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2008
畢業學年度:96
語文別:中文
論文頁數:99
中文關鍵詞:控制晶型方向性鑽石膜微波電漿束化學氣相沈積法
外文關鍵詞:controll diamond shape(100)-orientedmicrowave plasma jet chemical vapor deposition
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在過去幾年來利用化學氣相沈積法成長鑽石一直廣泛的被人們所使用,而鑽石膜它的優良的機械性質與光電性質經常是用來作為感測器、微機電與半導體的重要元件之一,主要是由於鑽石具有硬度高、熱傳導度佳、傳聲速度快、彈性模數高、負電子親合力、低摩擦係數、高折射率、化學安定性和遠紅外光至X-ray範圍的光學穿透性等優異性質,其中鑽石的光電性質一直是人們主要利用的方向,鑽石的高靈敏度,耐高溫環境對於電子元件來說是很重要的一環。
然而鑽石擁有許多不同的晶體結構,而其中以(100)晶面的鑽石微結構品質最為良好,主要是(100)晶面結構的鑽石膜與(111)晶面結構的鑽石膜或非方向性鑽石相比,具有較少的成長缺陷、較好的鑽石晶粒品質、較大的鑽石晶粒尺寸、較平滑的表面形貌、高熱傳導率與緊密的連續性膜,所以方向性鑽石膜與雜亂無規則方向的鑽石膜相比擁有較好的機械性質與品質特性。
本研究主要是利用微波電漿束化學氣相沈積法成長高方向性鑽石膜,藉由通入不同的氣體系統(氫氣+甲烷、氫氣+甲烷+氧氣+氬氣),在n-type(100)的矽基板上成長(100)晶面之鑽石膜結構,此外藉由調整微波功率、工作壓力與甲烷濃度等實驗參數可以成長出高方向性之鑽石膜,以及觀察分析成長的高方向性鑽石薄膜的表面形貌以及品質特性。
Resent years the interest in growing diamond using CVD method arises mainly due to its enormous potentials of material property and photoconductivity for numerous applications. For example the transparency of diamond to a wide range of electromagnetic spectrum makes it an ideal material for producing IR windows and optical coatings. One of the most important features of oriented diamond films are good dark I-V characteristics, C-f characteristics and photocurrent under steady-state X-ray excitation investigated at room temperature.
The as-obtained (100)-oriented diamond films have lower concentrations of point and extended defects, thus are shown to possess better crystal quality than (111)-oriented or randomly oriented diamond films. The flat surfaces of (100)-oriented diamond films with closely-packed grains are smoother than those of (111)-oriented films.(100)-oriented thick diamond films with large grain size have higher thermal conductivity and crystal structures like nature diamonds.
These uniformly (100)-oriented diamond films were prepared by microwave plasma jet chemical vapor deposition (MPJCVD) from gaseous mixtures of CH4-H2 system and CH4-H2-Ar-O2 system. In order to grow (100)-oriented diamond films on n-type (100) silicon substrates, it is necessary to control concentrations of methane, oxygen and argon in a plasma atmosphere and to control substrate temperature by adjusting microwave power and chamber pressure.
目 錄

中文摘要 i
英文摘要 ii
誌謝 iii
目錄 iv
表目錄 vi
圖目錄 vii
第一章 序論 1
1.1 前言 1
1.2 鑽石在工業上之應用 1
1.3 研究動機 3
1.4 研究目的 3
第二章 文獻回顧 6
2.1碳的結構 6
2.1.1 鑽石結構 6
2.1.2 石墨結構 7
2.1.3 類鑽碳結構 7
2.1.4 巴克球結構 7
2.1.5 奈米碳管結構 8
2.2鑽石薄膜之人工合成方法 10
2.3微波電漿原理 12
2.3.1 微波原理 12
2.3.2 低溫電漿 12
2.4 CVD鑽石薄膜反應機制 14
2.4.1 動力學分析 14
2.4.2 熱力學分析 16
2.4.3 電漿溫度分析 18
2.5 CVD鑽石成核與成長理論 22
2.5.1 CVD鑽石薄膜成核理論 22
2.5.2 薄膜形成類型 26
2.6方向性鑽石薄膜成長 28
第三章 研究方法與實驗步驟 34
3.1實驗流程與步驟 34
3.1.1 不同方式前處理成長鑽石薄膜 34
3.1.2 成長不同方向性鑽石薄膜於碳氫電漿 34
3.1.3 不同氧氣濃度於成長鑽石膜影響 35
3.2實驗設備 37
3.2.1 微波電漿束化學氣相沈積系統 37
3.3薄膜特性分析儀器 40
3.3.1 掃瞄式電子顯微鏡 40
3.3.2 拉曼光譜 40
3.3.3 歐傑電子能譜 41
3.3.4 X光繞射儀 41
3.3.5 X光光電子能譜儀 41
3.3.6 傅立葉紅外線光譜儀 42
第四章 結果與討論 43
4.1前處理方式對鑽石成核之影響 43
4.1.1 不同鑽石膜成核前處理方式 43
4.1.2 不同前處理之表面形貌 44
4.1.3 不同前處理之Raman品質分析 45
4.1.4 小結 46
4.2碳氫電漿成長具有不同方向性鑽石薄膜 48
4.2.1 微波功率對於鑽石薄膜之影響 49
4.2.2 工作壓力對於鑽石薄膜之影響 53
4.2.3 甲烷濃度對於鑽石薄膜之影響 58
4.2.4 不同成長時間對方向性鑽石膜之影響 63
4.2.5 小結 75
4.3氬氣和氧氣通入碳氫電漿系統成長不同方向性鑽石 77
4.3.1 鑽石膜表面形貌分析 79
4.3.2 鑽石膜特性與晶格特性分析 80
4.3.3 小結 82
4.4利用氧氣消除鑽石薄膜石墨相結構 90
4.4.1 鑽石膜表面形貌分析 90
4.4.2 鑽石膜品質與晶格特性分析 90
4.4.3 小結 91
第五章 結論 94
參考文獻 95
作者簡介 99
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