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研究生:吳佳玲
研究生(外文):Jia-Ling Wu
論文名稱:利用射頻磁控濺鍍法製備氮化鋁薄膜於氧化鋁緩衝層作為表面聲波元件之應用
論文名稱(外文):Fabrication of high frequency SAW devices with buffer layer Al2O3 thin film applied with AlN thin film by RF magnetron sputteing
指導教授:施文欽
指導教授(外文):Wen-Ching Shih
學位類別:碩士
校院名稱:大同大學
系所名稱:光電工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2008
畢業學年度:96
語文別:中文
論文頁數:114
中文關鍵詞:氮化鋁
外文關鍵詞:AlN
相關次數:
  • 被引用被引用:1
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表面聲波元件是在壓電基板上利用壓電換能原理的特性,做各種訊號的處理。目前通訊元件有朝著高頻化的發展趨勢,而高頻表面聲波元件須具有高波速,高機電耦合係數,低插入損失等特性,經由壓電薄膜與不同基底材料或緩衝層所組成之表面聲波元件不但可以提高表面聲波元件操作頻率以及增加機電耦合係數,因此在講求輕薄短小的行動通訊產品中已被大量使用
本研究使用電子束蒸鍍氧化鋁 (Al2O3)薄膜作為實驗上之緩衝層後,再使用射頻磁控濺鍍法來沈積氮化鋁薄膜作為壓電材料,比較在不同厚度氧化鋁緩衝層之表面聲波元件頻率響應變化,並和SiO2/Si 及sapphire 基板作比較,希望以電子束蒸鍍法成長高波速緩衝層可以降低成本,並縮短製程時間,將來可以提供作為高頻表面聲波元件之製作。
我們也順利找到當射頻功率為178 W、氮氣比例濃度在30 %、製程壓力在7 mtorr、基板溫度為400 ℃、沉積時間在2 Hr時,可得到具有高C軸優選取向的氮化鋁薄膜的沈積條件。
之後也在AlN/Al2O3(0.2 μm)/SiO2/Si、AlN/Sapphire、AlN/SiO2/Si結構上成功地製作表面聲波元件,並利用網路分析儀得到中心頻率分別為315.8 MHz、350.2 MHz和318.8 MHz,證實氮化鋁薄膜具有良好的壓電特性。
Now communication elements are developing towards high frequency. SAW devices must have high velocity, high electromechanical coupling coefficient, low insertion loss. SAW devices composed of the piezoelectric thin film and different substrate materials or buffer layers can improve the operating frequency of SAW devices and the electromechanical coupling coefficient. Consequently, SAW devices have been widely applied in mobile communication due to their small size and light weight.
This study employs Al2O3 as the experimental buffer layer and AlN as the piezoelectric material to contrast the frequency responses of SAW devices. We use Al2O3 buffer layers with different thicknesses and compare with the SiO2/Si and sapphire substrates. We hope the electron beam evaporation to develop buffer layers with high velocity of wave has been proved to lower the cost and shorten the time of production. The method is sure of producing high frequency SAW devices.
We find the fabrication of AlN (002) C-axis parameters of the total pressure was kept at 7 mtorr. The nitrogen percentage in the gas mixture was 30 %. The RF power delivered by the RF generator was 178 W. The deposition time was fixed at 2 hr The substrate was kept at temperatures on 400 °C.
The AlN thin film devices were fabricated on Al2O3(0.2 μm)/SiO2/Si、Sapphire and SiO2/Si substrates.
The frequency response for the SAW filter were measured on these three structures using a network analyzer. The center frequency of the SAW devices were 315.8 MHz、350.2 MHz and 318.8 MHz, respectively. We prove that AlN thin film has great piezoelectric property.
目錄

致謝 I
中文摘要 II
英文摘要 III
目錄 IV
表目錄 VIII
圖目錄 XI

第一章 緒論 1
1-1 簡介 1
1-2 研究動機 3

第二章 基本理論 6
2-1 簡介
6 2-2 壓電效應與表面聲波之基本原理 7
2-2-1 正壓電效應 8
2-2-2 逆壓電效應 9


2-2-3表面聲波元件基本原理 9
2-3 AlN的結構與特性 13
2-4藍寶石(sapphire) 14
2-5薄膜製作技術 15
2-5-1射頻磁控濺鍍法 16
2-5-2反應式濺鍍 21
2-5-3電子束蒸鍍法 22

第三章 實驗製程與量測 25
3-1基板準備 25
3-1-1 SiO2/Si (100)基板 25
3-2製備不同厚度氧化鋁(Al2O3)緩衝層薄膜 26
3-2-1 E-beam蒸鍍不同厚度Al2O3薄膜 26
3-3製備AlN薄膜 26
3-3-1製備AlN薄膜於不同厚度的Al2O3/ SiO2/Si結構 26
3-4薄膜物性量測 28
3-4-1 α-step膜厚量測 28
3-4-2 X-ray繞射儀 28
3-4-3原子力顯微鏡 29
3-4-4掃描式電子顯微鏡 30
3-5 表面聲波元件製作 31
3-5-1在Al2O3/ SiO2/Si、AlN/SiO2/Si、AlN/Sapphire 結構上製作表面聲波元件 31
3-5-2表面聲波元件量測 33

第四章 結果與討論 34
4-1Al2O3緩衝層分析 34
4-2氮化鋁(AlN)薄膜分析 34
4-3沈積參數對AlN/Al2O3/SiO2/Si 結構的影響 35
4-3-1氮氣濃度對氮化鋁薄膜沈積的影響 35
4-3-2製程壓力對氮化鋁薄膜沈積的影響 40
4-3-3基板溫度對氮化鋁薄膜沈積的影響 41
4-3-4射頻功率對氮化鋁薄膜沈積的影響 42
4-3-5濺鍍時間長短的影響 44
4-3-6總結 45
4-3-7沈積高C軸優選取向的氮化鋁薄膜之製程參數考量 45
4-4氮化鋁薄膜沈積在Sapphire(0001)基板上之結果 46
4-5氮化鋁薄膜沈積在SiO2/Si基板上之結果 47

4-6氮化鋁薄膜物性分析 47
4-6-1 AlN/Al2O3/SiO2/Si薄膜物性分析 47
4-6-2 AlN/sapphire薄膜物性分析 48
4-6-3 AlN/SiO2/Si薄膜物性分析 48
4-7表面聲波元件電性量測分析 49
4-7-1光罩設計 49
4-7-2 IDT/AlNAlN/Al2O3/SiO2/Si 結構 49
4-7-3 IDT/AlN/Sapphire 結構 51
4-7-4 IDT/AlN/SiO2/Si 結構 52

第五章 結論與未來展望 54
5-1 結論54
5-2未來展望 55

參考文獻 56
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