臺灣博碩士論文加值系統

本研究以金屬誘發結晶法應用於太陽能電池的多晶矽薄膜。採用AIC(aluminum Induced Crystallization)的技術，即利用金屬誘發，或以鋁置換的方式使非晶矽薄膜能有效地轉變為多晶的形態，對此多晶矽薄膜作物性的分析。第一階段以傳統之固相結晶法來完成多晶矽薄膜，第二階段以金屬誘發結晶之方式完成多晶矽薄膜，其中又以成長於玻璃上與氮化矽薄膜上分別做探討，完成之試片以拉曼光譜儀確認是否已由非晶矽轉變為多晶矽，以場發射電子顯微鏡觀察其表面結晶之狀況，以霍爾量測觀察其載子濃度與遷移率。實驗結果證實，經由金屬誘發結晶確實可降低多晶矽薄膜之製程溫度並獲得較佳之微結構組織。
當我們退火溫度520°C持溫2小時，將可成功研製晶粒大小約為10~15μm之多晶矽薄膜。若將鋁誘發結晶結成長於氮化矽薄膜上，可發現其表面型態改變，且結晶晶粒也變小。經由能量散譜儀分析可得知，成長於氮化矽上之多晶矽薄膜，其會有鋁原子殘留較多現象，因此亦間接影響其薄膜之載子濃度與遷移率。
將完成之多晶矽薄膜做為晶種層，往上成長吸收層，由場發射電子顯微鏡觀察得知，當我們吸收層成長至900nm後，其可現表面仍有如晶種層結晶之情形產生，並未因厚度增加而影響。

In this research, the low temperature poly-silicon (LTPS) thin films fabricated by the metal induced crystallization method are of interests for solar cells. The AIC (Aluminum Induced Crystallization) with metal induction or Al rechange methods will be make the non-crystalline silicon change into the type attitude of polycrystalline silicon. These LTPS thin films will be analyzed by the material and electrical measurements to optimize the fabricated processes.The first Solid Phase Crystallization methods will be apllied to the as-deposited a-Si thin film.The secends Aluminum Induced Crystallization methods will be apllied to the as-deposited a-Si thin film. Grow up on the glass and on the SiN thin film that do the discussion separately.
Results show the annealing temperature(520°C) and the annealing time(2hr).The lateral grain size observed from SEM graph is about 10~15μm. If bring out AIC grow up it on the SiN thin film. Find its superficial attitude changes and the crystallization crystalline grain is diminished. The poly-si thin film grow up on the SiN thin film. The aluminium atoms remain more phenomena. So influence the mobility and the bulk of the thin film. We study grow up the absorb layer. We grow up and absorb layer it after 900nm. The discovery has not been influenced the crystallization type attitude because of increasing in thickness.

第一章 序論 .................................................... 1
1.1 研究目的與動機 ....................................... 1
1.1.1 矽的結晶型態.............................................. 1
1.1.2 多晶矽與非晶矽薄膜太陽能電池.............................. 2
1.2 研究方法 ............................................. 4
1.3 論文架構 ............................................. 4

第二章 基本理論及文獻回顧 ........................................ 7
2.1 太陽能電池 ........................................... 7
2.1.1 半導體之光導效應...................................... 7
2.1.2 半導體之光起電力效應.................................. 8
2.2 太陽電池發電原理 ..................................... 8
2.2.1 基本原理 ............................................. 8
2.2.2 太陽電池電路模型..................................... 10
2.2.3 輸出功率與效率轉換................................... 11
2.2.4 串聯電阻與等效電路................................... 12
2.3 太陽電池種類 ........................................ 12
2.4 多晶矽結晶方式 .......................................14
2.4.1 直接沉積法 ...........................................14
2.4.2 固相結晶法(Solid Phase Crystallization; SPC) .........15
2.4.3 準分子雷射退火法(Excimer Laser Crystallization; ELC). 16
2.4.2 金屬誘發結晶法(Metal Induced Crystallization: MIC) ...17
2.5 鋁金屬誘發結晶(Aluminium Induced Crystallization: AIC)18
2.5.1 歷史回顧 .............................................18
2.5.2 鋁金屬誘發結晶機制 ...................................18
2.6 抗反射層研究 .........................................20
2.6.1 抗反射層之重要性 .....................................20
2.6.2 氮化矽之特性 .........................................21
第三章 實驗步驟 .............................................34
3.1 實驗步驟簡介 .........................................34
3.1.1 成長薄膜前的化學清洗 .................................34
3.1.2 成長非晶矽薄膜及鋁薄膜 ...............................34
3.1.3 成長氮化矽薄膜及非晶矽薄膜及鋁薄膜 .................. 35
3.1.4 熱退火處理 ...........................................35
3.1.5 蝕刻鋁處理 ...........................................35
3.1.6 吸收層之後續成長 .....................................35
3.2 濺鍍原理 .....................................................36
3.2.1 電漿原理 .............................................36
3.2.2 射頻磁控濺鍍原理 .................................... 36
3.3 物性量測 ............................................ 37
3.3.1 掃瞄式電子顯微鏡量測 ................................ 37
3.3.2 拉曼光譜量測 ........................................ 38
3.3.3 霍爾量測 ............................................ 39
3.3.3.1 Hall ber 量測 ....................................... 40
3.3.3.1 Van der Pau 量測 .................................... 40
第四章 結果與討論 ...........................................50
4.1 直接以固相結晶法成長多晶矽薄膜....................... 50 4.1.1 掃瞄式電子顯微鏡分析................................. 50
4.1.2 拉曼光譜量測..........................................50
4.2 以鋁誘發結晶法，直接於玻璃上製作多晶矽薄膜........... 50
4.2.1 掃瞄式電子顯微鏡分析................................. 50
4.2.2 拉曼光譜量測......................................... 51
4.2.3 霍爾量測............................................. 52
4.3 以鋁誘發結晶法，於氮化矽薄膜上製作多晶矽薄膜......... 52
4.3.1 掃瞄式電子顯微鏡分析................................. 52
4.3.2 拉曼光譜量測......................................... 53
4.3.3 霍爾量測............................................. 54
4.4 後續之i-layer薄膜成長................................ 54
第五章 結論與未來研究方向 ................................. 76
5.1 結論 ............................................... 76
5.2 未來研究方向 ....................................... 76
參考文獻 ...........................................................77

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