臺灣博碩士論文加值系統

隨著微波技術的日趨重要，對主動元件的要求愈來愈高，而高電子遷移率電晶體於三五族半導體中是一個很重要的元件，主要應用在軍事和商業通訊的毫米波和微波頻率上。

本論文使用半導體元件模擬軟體MEDICI針對雙通道高電子遷移率電晶體與複合通道高電子遷移率電晶體兩種結構進行模擬與分析。本論文改變元件結構中之能障層、阻隔層與載子供應層之厚度與摻雜濃度，並且比較元件本身的電性特性有何改變，並於結論中提出各層結構對於兩種元件電性之影響。藉由MEDICI模擬雙通道與複合通道元件於不同結構的電性，經由模擬結果之比較，可以得知何種結構改變會獲得最佳的元件特性，增加直流操作範圍、提升汲極電流與轉移電導特性。

High electron mobility transistor (HEMT) device is one of the most important semiconductor devices for military and commercial communication applications at millimeter-wave frequencies.

In this thesis, dual-channel HEMT and composite HEMT structures are studied using the two-dimension device simulation program MEDICI. Electrical characteristics with different thickness of the barrier layers and spacer layers, and also with different concentration of the delta-doping layer, are simulated and compared. From the simulation result, the optimized layer structures for higher drain current and transconductance are obtained.

摘要..............................i
ABSTRACT..............................ii
誌謝..............................iii
目錄..............................iv
表目錄..............................vi
圖目錄..............................vii
第一章 緒論..............................1
第二章 半導體元件模擬軟體－MEDICI之介紹..............................3
2.1 前言..............................3
2.2 TMA MEDICI 內建電流計算及模擬..............................4
2.2.1 物理模型..............................4
2.2.2 基本的電流電壓模型..............................5
2.2.3 復合模型(recombination model)..............................7
2.2.4 遷移率模型（mobility model）..............................8
2.2.5 邊界條件（Boundary Conditions）..............................9
2.2.6 數值方法(Numerical Method)..............................10
2.3 材料之參數值..............................12
第三章 高電子遷移率電晶體之介紹..............................13
3.1 前言..............................13
3.2 高電子遷移率電晶體..............................13
3.2.1 調變式摻雜之單異質接面高電子遷移率電晶體..............................17
3.2.2 Delta-doping之單異質接面高電子遷移率電晶體..............................18
3.2.3 調變式摻雜之雙異質接面高電子遷移率電晶體..............................19
3.2.4 Delta-doping之雙異質接面高電子遷移率電晶體..............................20
3.3 總結..............................21
第四章 雙通道與複合通道高電子遷移率電晶體之模擬分析..............................22
4.1 前言..............................22
4.2 雙通道高電子遷移率電晶體..............................22
4.2.1 單通道元件結構..............................23
4.2.2 模擬結果..............................24
4.2.3 雙通道元件結構..............................28
4.2.4 模擬結果..............................30
4.3 複合通道高電子遷移率電晶體..............................43
4.3.1 元件結構..............................43
4.3.2 模擬結果..............................45
4.4 模擬結果總結..............................57
第五章 結論..............................58
參考文獻..............................59
自傳..............................62

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