臺灣博碩士論文加值系統

傳統的拋光墊修整器是以碎鑽來當作修整拋光墊的切削刀刃，具有不同的尖銳程度及隨機的方向性，所以無法有效控制切削刀刃的刺入角度，因此在拋光墊上所刻劃的紋路是雜亂無序的。本研究發展一種新的技術，可以使切削刀刃具有一致的方向性，研究中捨棄傳統的單晶鑽石，而改以高壓燒結的多晶鑽石為切削刀刃，此種多晶鑽石是以矽為燒結介質，外型概似立方體，具有次微米的尺寸，雖然多晶鑽石的表面是粗糙的，但卻有完整的尖角可供作為切削刀刃；多晶鑽石被佈滿在直徑104 mm且開有孔洞的模板之中，不僅可使鑽石尖角方向統一，並可將鑽石的等高度控制在70 μm內，另外使用環氧樹脂灌注在具有方向性的鑽石中並將其固定在不銹鋼材質的承載基座。此種新式拋光墊修整器的切削刀刃是有規則且均勻地分佈，在實驗中被用來修整IC1000拋光墊，結果顯示其修整後的拋光墊表面紋路相較於其他修整器修整後的拋光墊表面紋路是比較均勻且更適合應用於化學機械拋光製程。

Conventional pad conditioners for dressing CMP pads contains discrete diamond grits with variable shapes and random orientations. As a result, there is no control of the penetration angle of the cutting tips. Consequently, the asperities formed on the CMP pad is chaotic. In this research, we have developed a novel technique that can allow the orientation of cutting tips with a regular shape. Instead of using irregular monocrystals of diamond grits, polycrystalline diamond (PCD) cubes sintered by silicon under high pressure are employed. The PCD cubes are sub-millimeter in size. Although rugged in appearance, they possess well defined cubical corners. A template is used to orient the three sided corners in such a way that the tips of them are leveled to within 70 microns across an area of about 104 mm in diameter. The oriented PCD cubes are cast with epoxy and they are mounted on a stainless steel substrate. The new CMP pad conditioners with regular distribution of cutting pyramids are used to dress a CMP pad (IC1000). The results showed that the asperities formed on the pad is much more uniform than that normally involved in polishing wafers.

誌謝 ii
摘要 iii
ABSTRACT iv
目錄 v
表目錄 viii
圖目錄 ix
符號說明 xiii
1. 前言 1
1.1 研究背景 1
1.2 研究動機 3
1.3 研究目的 4
1.4 研究方法 5
2. 文獻回顧 6
3. 化學機械拋光介紹 10
3.1 化學機械拋光基本原理 10
3.2 修整器種類 11
3.2.1 毛刷 12
3.2.2 高壓水刀 12
3.2.3 超音波震動 13
3.2.4 鑽石修整器 13
3.3 多晶鑽石修整器切削原理 19
3.4 SiC-PCD介紹 22
3.5 影響鑽石修整器切削拋光墊的因素 25
4. 實驗設備與規劃 27
4.1 實驗材料 27
4.1.1 第一階段 27
4.1.2 第二階段 32
4.2. 實驗設備 34
4.2.1第一階段 34
4.2.2第二階段 38
4.3. 實驗規劃與方法 45
4.3.1第一階段 45
4.3.2第二階段 46
4.3.3實驗方法說明 47
5. 實驗結果與討論 57
5.1 多晶鑽石修整器的切削特性 57
5.1.1單晶與多晶鑽石修整器切削機制之比較 57
5.1.2不同材料參數對拋光墊移除率之影響 60
5.1.2.1不同鑽石對拋光墊移除率之影響 60
5.1.2.2鑽石突出量對拋光墊移除率之影響 62
5.1.3各種鑽石修整器拋光墊移除率之比較 64
5.2 影響新式鑽石修整器等高度的因素 67
5.2.1等高度誤差量測 67
5.2.2材料形貌因素 71
5.2.3製程因素 72
5.3鑽石修整器對切削拋光墊表面特性的影響 75
5.3.1拋光墊表面粗糙度之比較 75
5.3.2拋光墊表面形貌之比較 81
5.4新式鑽石修整器的磨耗特性 83
5.4.1多晶鑽石的磨耗機制 83
5.4.2加工時間對鑽石磨耗之影響 88
6. 結論與未來展望 92
6.1 結論 92
6.2 未來展望 93
參考文獻 94
自傳 98

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