跳到主要內容

臺灣博碩士論文加值系統

(44.213.63.130) 您好!臺灣時間:2023/02/03 15:00
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果 :::

詳目顯示

我願授權國圖
: 
twitterline
研究生:陳鏞升
研究生(外文):Chen, Jung-Sheng
論文名稱:多晶鑽石修整器在化學機械拋光中切削特性之研究
指導教授:陳盈同
學位類別:碩士
校院名稱:國防大學理工學院
系所名稱:機械工程碩士班
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2009
畢業學年度:97
語文別:中文
論文頁數:98
中文關鍵詞:化學機械拋光拋光墊修整器鑽石多晶鑽石修整器
外文關鍵詞:CMPPad ConditionerDiamondPCDDresser
相關次數:
  • 被引用被引用:2
  • 點閱點閱:354
  • 評分評分:
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:2
傳統的拋光墊修整器是以碎鑽來當作修整拋光墊的切削刀刃,具有不同的尖銳程度及隨機的方向性,所以無法有效控制切削刀刃的刺入角度,因此在拋光墊上所刻劃的紋路是雜亂無序的。本研究發展一種新的技術,可以使切削刀刃具有一致的方向性,研究中捨棄傳統的單晶鑽石,而改以高壓燒結的多晶鑽石為切削刀刃,此種多晶鑽石是以矽為燒結介質,外型概似立方體,具有次微米的尺寸,雖然多晶鑽石的表面是粗糙的,但卻有完整的尖角可供作為切削刀刃;多晶鑽石被佈滿在直徑104 mm且開有孔洞的模板之中,不僅可使鑽石尖角方向統一,並可將鑽石的等高度控制在70 μm內,另外使用環氧樹脂灌注在具有方向性的鑽石中並將其固定在不銹鋼材質的承載基座。此種新式拋光墊修整器的切削刀刃是有規則且均勻地分佈,在實驗中被用來修整IC1000拋光墊,結果顯示其修整後的拋光墊表面紋路相較於其他修整器修整後的拋光墊表面紋路是比較均勻且更適合應用於化學機械拋光製程。
Conventional pad conditioners for dressing CMP pads contains discrete diamond grits with variable shapes and random orientations. As a result, there is no control of the penetration angle of the cutting tips. Consequently, the asperities formed on the CMP pad is chaotic. In this research, we have developed a novel technique that can allow the orientation of cutting tips with a regular shape. Instead of using irregular monocrystals of diamond grits, polycrystalline diamond (PCD) cubes sintered by silicon under high pressure are employed. The PCD cubes are sub-millimeter in size. Although rugged in appearance, they possess well defined cubical corners. A template is used to orient the three sided corners in such a way that the tips of them are leveled to within 70 microns across an area of about 104 mm in diameter. The oriented PCD cubes are cast with epoxy and they are mounted on a stainless steel substrate. The new CMP pad conditioners with regular distribution of cutting pyramids are used to dress a CMP pad (IC1000). The results showed that the asperities formed on the pad is much more uniform than that normally involved in polishing wafers.
誌謝 ii
摘要 iii
ABSTRACT iv
目錄 v
表目錄 viii
圖目錄 ix
符號說明 xiii
1. 前言 1
1.1 研究背景 1
1.2 研究動機 3
1.3 研究目的 4
1.4 研究方法 5
2. 文獻回顧 6
3. 化學機械拋光介紹 10
3.1 化學機械拋光基本原理 10
3.2 修整器種類 11
3.2.1 毛刷 12
3.2.2 高壓水刀 12
3.2.3 超音波震動 13
3.2.4 鑽石修整器 13
3.3 多晶鑽石修整器切削原理 19
3.4 SiC-PCD介紹 22
3.5 影響鑽石修整器切削拋光墊的因素 25
4. 實驗設備與規劃 27
4.1 實驗材料 27
4.1.1 第一階段 27
4.1.2 第二階段 32
4.2. 實驗設備 34
4.2.1第一階段 34
4.2.2第二階段 38
4.3. 實驗規劃與方法 45
4.3.1第一階段 45
4.3.2第二階段 46
4.3.3實驗方法說明 47
5. 實驗結果與討論 57
5.1 多晶鑽石修整器的切削特性 57
5.1.1單晶與多晶鑽石修整器切削機制之比較 57
5.1.2不同材料參數對拋光墊移除率之影響 60
5.1.2.1不同鑽石對拋光墊移除率之影響 60
5.1.2.2鑽石突出量對拋光墊移除率之影響 62
5.1.3各種鑽石修整器拋光墊移除率之比較 64
5.2 影響新式鑽石修整器等高度的因素 67
5.2.1等高度誤差量測 67
5.2.2材料形貌因素 71
5.2.3製程因素 72
5.3鑽石修整器對切削拋光墊表面特性的影響 75
5.3.1拋光墊表面粗糙度之比較 75
5.3.2拋光墊表面形貌之比較 81
5.4新式鑽石修整器的磨耗特性 83
5.4.1多晶鑽石的磨耗機制 83
5.4.2加工時間對鑽石磨耗之影響 88
6. 結論與未來展望 92
6.1 結論 92
6.2 未來展望 93
參考文獻 94
自傳 98
[1]Chen, E. and Lam, E., “From ITRS roadmap to latest lithography development,” DigiTimes Daily IT news, 2006.
[2]International Technology Roadmap For Semiconductors : 2008 Update.
[3]宋健民,“CMP的超越技術—台灣主導全球半導體製造的契機 (上) ”,工業材料雜誌,第254期,第159-169頁,2008年1月。
[4]Wentorf, R. H. Jr. and Rocco, W. A., “Diamond tools for machining,” U.S. Pat. 3745623, July 17, 1973.
[5]Wentorf, R. H. Jr. and Rocco, W. A., “Cubic boron nitride/sintered carbide abrasive bodies,” U.S. Pat. 3767371, October 23, 1973.
[6]Beyer, K. D., Guthrie, W. L., Makarewicz, S. R., Mendel, E., Patrick, W. J., Perry, K. A., Pliskin, W. A., Riseman, J., Schaible, P. M. and Standley, C. L., “Chem-mech polishing method for producing coplanar metal/insulator films on a substrate,” U.S. Pat. 4944836, July 31, 1990.
[7]Steigerwald, J. M., Murarka, S. P. and Gutmann, R. J., Chemical Mechanical Planarization of Microelectronic Materials, John Wiley & Sons, pp.130, 1996.
[8]Bovenkerk, H. P. and Gigl, P.D., “Temperature resistant abrasive compact and method for making same,” U.S. Pat. 4288248, Sep. 8, 1981.
[9]Yu, H., Yang, Z., Wang, C. and Zai, Z., “Thermostable polycrystalline diamond body, method and mold for producing same,” U.S. Pat. 4643741, Feb. 17, 1987.
[10]Horton, M. D. and Peterson, G. R., “Infiltrated thermally stable polycrystalline diamond,” U.S. Pat. 4664705, May. 12, 1987.
[11]王艷輝、王明智、李寶余,“高溫超高壓條件對Si中介結合的聚晶金剛石(PCD)組織與耐磨性的影響”,複合材料學報,第十一卷,第二期,第57-61頁,1994。
[12]劉雄飛、陳、呂海波,“金剛石鍍膜對金剛石强度以及與胎體結合性能的影響”,粉末冶金技術,第十五卷,第三期,第182-185頁,1997。
[13]Larsson, P., Axén, N., Ekström, T., Gordeev, S. and Hogmark, S., “Wear of a new type of diamond composite,” International Journal of Refractory Metals & Hard Materials, Vol. 17, pp. 453-460, 1999.
[14]湯咏舫、黄網汶、劉勇,“人造金剛石聚晶黏結劑的研究”,稀有金屬,第二十四卷,第二期,第111-114頁,2000。
[15]Osipov, O. S., Skury, A. L. D. and Bobrovnitchii, G. S., “Influence of High Sintering Pressure on the Microhardness and Wear Resistance of Diamond Powder and Silicon Carbide-Based Composites,” Materials Research, Vol. 7, No. 2, pp. 335-337, 2004.
[16]Voronin, G. A., Zerda, T. W., Qian, J., Zhao, Y., He, D. and Dub, S.N., “Diamond−SiC nanocomposites sintered from a mixture of diamond and silicon nanopowders, ” Diamond and Related Materials, Vol. 12, pp. 1477-1481, 2003.
[17]Zimmer, J. and Stubbmann, A., “Key Factors Influencing Performance Consistency of CMP Pad Conditioners,” NCCAVS CMP ’98 Symposium, pp. 87-92, 1998.
[18]Sung, J. and Pai, Y. L., ”CMP Pad Dresser:A Diamond Grid Solution,” Proceedings of the Society of Grinding Engineers, pp. 189-196, 2000.
[19]Garretson, C. C., Mear, S. T., Rudd, J. P., Prabhu, G., Osterheld, T. and Flynn, D., “New Pad Conditioning Disk Design Delivers Excellent Process Performance While Increasing CMP Productivity,” Proceedings of CMP-MIC, pp. N1-N5, 2000.
[20]Wang, T. C., Hsieh, T. E., Wang, Y. L., Liu, C. W., Lo, K. Y., Wang, J. K. and Lee, W., “A Novel Pad Conditioning Disk Design of Tungsten Chemical Mechanical Polishing Process for Deep Sub-Micron Device Yield Improvement,” IEEE, pp. 363-366, 2001.
[21]廖運炫、楊琦婷、洪珮文、趙弘文,“化學機械研磨系統之鑽石修整器研究”,機械月刊,第二十九卷,第七期,第64-77頁,2003。
[22]Lee, H. S., Sugiyama, M., Philipossian, A., Seike, Y., Takaoka, M., and Miyachi, K., “Evaluation of High Pressure Micro Jet Technology as an Alternative Pad Conditioning Method for Silicon Dioxide Chemical Mechanical Planarization, ” Proceedings of 2004 AIChE Annual Meeting, pp. 1359-1364, 2004
[23]土肥俊郎等著,王建榮、林必窈、林慶福等編譯,半導體平坦化CMP 技術,全華科技圖書股份有限公司,台北,2000。
[24]譚安宏、鄭穎駿、李正國、周呈祥、宋健民,“鑽石修整器在化學機械拋光溶液中之腐蝕研究”,防蝕工程,第二十卷,第二期,第163-168頁,2006。
[25]Chen, Y. T., Liu, Y. C., Wang, L. Y., Chen, T. T. and Sung, J. C., “The Fabrication of CVD Diamond Disk by LIGA Like Process,” International Conference on Planarization/CMP Technology, pp. 434-442, 2008.
[26]蘇傳富,“多晶鑽石修整器應用於化學機械拋光精密修整之研究”, 碩士論文,國防大學理工學院兵器系統工程研究所,第13頁,桃園,2008。
[27]Bhushan, B., Principles and Applications of Tribology, John Wiley & Sons, pp. 495-497, 1999.
[28]蔡明義,“CMP 鑽石修整器修整聚胺酯拋光墊表面特性之研究”,博士論文,國立臺灣大學工學院機械工程研究所,台北,2007。
[29]Chen, Y. T., Lin, C. Y., Sung, J. C., Chou, C. S., Tsai, M. Y. and Sung, M., “The Clear Cutting of CMP Pads By Polycrystalline Diamond Blades,” International Conference on Planarization/CMP Technology, pp. 112-118, 2008.
[30]Gigl, P.D., “Process for making diamond and cubic boron nitride compacts, ” U.S. Pat. 4525179, January 25, 1985.
[31]Tomlinson, P.N., Pipkin, N.J., Lammer, A. and Burnand, R.P., “Syndax 3,” Indust Diamond Rev, pp. 299-304, 1985.
[32]宋健民,鑽石合成,全華科技圖書股份有限公司,台北,第四章,民89年。
[33]McGrath, J. and Davis, C., “Polishing pad surface characterization chemical mechanical planarisation, ” Journal of Materials Processing Technology, Vol. 153-154, pp. 666-673, 2004.
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top