臺灣博碩士論文加值系統

首先使用MOCVD成長AlGaN/GaN HEMT結構(38nm Al0.18Ga0.82N/2μm GaN/sapphire)。繼之，實驗發現霍爾量測得到的載子濃度與電容-電壓量測到的載子濃度不相同，霍爾量測的載子濃度會因為表面條件而影響，但電容-電壓量測的載子濃度會因為蕭基接面所控制。為了去分析表面狀態對載子濃度的影響，使用MOCVD在不同溫度下以氫氣模式下做退火處理，溫度範圍為1000℃、900℃、800℃、700℃and 600℃。在掃瞄式電子顯微鏡發現，隨著退火溫度的上升，樣品因為受到氫氣退火影響氮原子與鎵原子的裂解使得表面開始隨機形成六角對稱之缺陷。由電壓-電流量測得知，在較低的退火溫度下，元件之低偏壓漏電流與順偏下所求得之飽合電流相似；然而對於退火溫度較高的樣品而言，其漏電流大小不僅隨退火溫度之上升而上升，亦大於順向飽合電流；在電容-電壓量測所得到的載子濃度是隨著退火溫度上升而下降，代表著元件表面的特性可能受到退火處理影響而改變。因此，表面狀態的改變應與該退火形成之缺陷有直接關連性。

The AlGaN/GaN HEMT structure in this investigation was growth by MOCVD. The carrier density was obtained by making Hall measurements and from capacitance–voltage (C–V) curves. In the experiment, the values were inconsistent. The carrier density varied with the surface conditions of the samples that were prepared for Hall and C–V measurements.
To study further the effects of the surface conditions on the sheet carrier densities, the samples were annealed at various temperatures that were used MOCVD to anneal for one hour at an environment of H2. Five samples were reloaded into the MOCVD reactor, and separately annealed at 1000℃, 900℃, 800℃, 700℃ and 600℃. The surface of samples random to became defects of hexagonal with SEM (Scanning Electron Microscopy), because Hydrogen pyrolysis with gallium atoms. Then, we were investigated that various temperatures for electrical measurements from the annealed temperature influenced surface condition. The annealed temperature was increased, because surface conditions became badly, and lead to the leakage current became hardly .Because the leakage current were related to the defects, so lead to concentration were lower. Thus, the relationship between surface state and the carrier density was determined.

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[22] Hyeongnam Kim, Michael Schuette, Hyunchul Jung, Junghui Song,
Jaesun Lee, and Wu Lu.Appl. Phys. Lett. 89, 053516 (2006)
[23]N. C. Chen, Y. K. Yang, W. C. Lien, and C. Y. Tseng, “Forward current-voltage characteristics of an AlGaInP light-emitting diode”, J. Appl. Phys. 102, 043706 (2007). (SCI)
[24]Donald A. Neamen, “Semiconductor Physics & Devices Second Edition.
[25]詹勳政，虎尾科技大學光電與材料研究所，“碳離子佈值於氮化鋁鎵/氮化鎵異質接面金屬-半導體-金屬光測器之製作與研究”，碩士論文，中華民國九十五年七月.
[26]黃金鐘，國立中央大學光電科學研究所，“氮離子佈值於氮化鎵之特性研究”，碩士論文，1999.
[27] N. C. Chen, C. Y. Tseng, and H. T. Lin, “Effect of annealing on sheet carrier density of AlGaN/GaN HEMT structure”, J. Crystal Growth 311, 859, 2009. (SCI)
[28]曾建元，長庚大學光電工程研究所“利用MOCVD成長AlN於Si基板上之介面特性的研究”，碩士論文，中華民國九十三年七月.
[29]唐慈淯，長庚大學光電工程研究所“鎂摻雜氮化銦鎵之成長及特性”，碩士論文，中華民國九十五年七月.

[1]R. Dingle, H. L Stormer, A. C. Gossard, and W. Wiegmann, Appl. Phys. Lett. 33, 665 (1978)
[2] I. Vurgaftman and J. R. Meyer, J. Appl. Phys. 94, 3675 (2003)
[3] M. S. Shur and M. A. Kahn, “Wide Band Gap Semiconductors. Good Results and Great Expections”, in the Proceedings of 23d International Symposium on GaAs and Related Compounds, St. Petersburg, Russia, Sep. 22-28, 1996, Institute Phys. Conference Series, No.155, Chapter 2, pp.25-32, M.S. Shur and R. Suris, Editors, IOP Publishing, London 1997.
[4]R. Gaska, J.W. Yang, A. Osinsky, A.D. Bykovski, M.S. Shur, Appl. Phys. Lett. 71(1997) 3673.
[5]R. Gaska, Q. Chen, J.W. Yang, A. Osinsky, M.A. Khan, M.S. Shur, IEEE Electron. Device Lett. 18 (1997) 492.
[6]M.A. Khan, Q. Chen, M.S. Shur, B.T. MsDermott, J.A. Higgins, J. Burm, W.J. Schaff, L.F. Eastman, IEEE Electron. Device Lett. 17 (1996) 584.
[7]Y.F. Wu, S. Keller, P. Kozodoy, B.P. Keller, P. Parikh, D. Kapolnek, S.P. DenBaars, U.K. Mishra, IEEE Electron. Device Lett. 18 (1997) 290.
[8]A. Saxler, P. Debray, R. Perrin, S. Elhamri, W.C. Mitchel, C.R. Elsass, I.P. Smorchkova, B. Heying, E. Haus, P. Fini, J.P. Ibbetson, S. Keller, P.M. Petroff, S.P. DenBaars, U.K. Mishra, J.S. Speck, J. Appl. Phys. 87 (2000) 369.

[9]S.L. Rumyantsev, N. Pala, M.S. Shur, R. Gaska, M.E. Levinshtein, M.A. Khan, G. Simin, X. Hu, J. Yang, J. Appl. Phys. 88 (2000) 6726.
[10]M. Yusuf Ali, M. Tao, J. Appl. Phys. 101 (2007) 103708.
[11]S.T. Bradley, S.H. Goss, J. Hwang, W.J. Schaff, L.J. Brillson, Appl. Phys. Lett. 85 (2004) 1368.
[12]A. Motayed, A. Sharma, K.A. Jones, M.A. Derenge, K.A. Iliadis, S.N. Mohammad, J. Appl. Phys. 96 (2004) 3286.
[13]C.M. Jeon, J.L. Lee, Appl. Phys. Lett. 82 (2003) 4301.
[14] L.S. Yu, D.J. Qiao, Q.J. Xing, S.S. Lau, K.S. Boutros, J.M. Redwing, Appl. Phys. Lett. 73 (1998) 238.
[15]S. Keller, U. K. Mishra, and S. P. DenBaars, Appl. Lett. 73. 10 (1998)
[16]R. K. Ahrenkiel, Solid State Electron. 35, 239,(1922)
[17]J. P. Ibbetson, P.T. Fini, K.D. Ness, S. P. DenBaars, J.S. Speck, and U.K. Mishra, Appl. Phys. Lett. 77, 250 (2000).
[18]S. Heikman, S. Keller, Y. Wu, J. S. Speck, S. P. DenBaars, and U. K.Mishra, J. Appl. Phys. 93, 10114 (2003)
[19]Donald A. Neamen “Semiconductor Physics & Devices.
[20]B. D. Cullity, Elements of X-ray Diffraction (Addison-Wesley, Reading, MA) (1967)
[21]陳建隆，“發光二極體之原理與製程”，全華圖書股份有限公司.
[22] Hyeongnam Kim, Michael Schuette, Hyunchul Jung, Junghui Song,
Jaesun Lee, and Wu Lu.Appl. Phys. Lett. 89, 053516 (2006)
[23]N. C. Chen, Y. K. Yang, W. C. Lien, and C. Y. Tseng, “Forward current-voltage characteristics of an AlGaInP light-emitting diode”, J. Appl. Phys. 102, 043706 (2007). (SCI)
[24]Donald A. Neamen, “Semiconductor Physics & Devices Second Edition.
[25]詹勳政，虎尾科技大學光電與材料研究所，“碳離子佈值於氮化鋁鎵/氮化鎵異質接面金屬-半導體-金屬光測器之製作與研究”，碩士論文，中華民國九十五年七月.
[26]黃金鐘，國立中央大學光電科學研究所，“氮離子佈值於氮化鎵之特性研究”，碩士論文，1999.
[27] N. C. Chen, C. Y. Tseng, and H. T. Lin, “Effect of annealing on sheet carrier density of AlGaN/GaN HEMT structure”, J. Crystal Growth 311, 859, 2009. (SCI)
[28]曾建元，長庚大學光電工程研究所“利用MOCVD成長AlN於Si基板上之介面特性的研究”，碩士論文，中華民國九十三年七月.
[29]唐慈淯，長庚大學光電工程研究所“鎂摻雜氮化銦鎵之成長及特性”，碩士論文，中華民國九十五年七月.