本論文主要為實現X及K頻帶的混頻器電路，此電路實現利用穩懋半導體公司 ( WIN ) 下線，分別利用0.5 um pHEMT 及0.15 um pHEMT製程技術設計工作於X-band及K-band頻段混頻器電路。
此X頻帶為一個吉伯特降頻混頻器電路，在量測與模擬結果非常接近，而此混頻器RF可用頻率約從7 GHz ~19 GHz，並且轉換增益益約有4.5 dB、P1dB約-11 dBm，以及IIP3約2 dBm，且消耗功率約42mW。
此K頻帶為一個次諧波鏡像消除混頻器電路，在輸入端LO與IF埠和RF埠使用九十度耦合器，並且利用相位相消的方式將鏡頻訊號抑制，在量測結果顯示當轉換損耗約為13 dB且鏡像抑制在19 dB，且各端的隔離度皆有15 dB的表現，而IIP3約12 dBm。

In this thesis, X and K-band mixer circuits have been realized by using 0.5 m pHEMT and 0.15 m pHEMT process, respectively.
For X-band Gilbert cell downconverter mixer circuit, the measured and simulated results are very close, and the frequence range 7-19 GHz, conversion gain of is 4.5 dB, P1dB is -11 dBm, IIP3 of about 2dBm and power consumption is about 42mW.
For K-band sub-harmonic image rejection mixer circuit. The LO, IF and RF ports are terminated with a quadrature coupler, and the mirror signal can be suppressed by phase cancellation approach. The measured results show that the the conversion loss is 13 dB and image rejection ratio is 19 dB, and isolation are better 15 dB, and IIP3 of 12 dB.

目錄
指導教授推薦書
口試委員會審定書
授權書
誌謝
中文摘要
Abstract
目錄
圖目錄
表目錄
第一章 簡介
1.1 研究動機
1.2 章節概述
第二章 運用巴群巴倫分波之X-Band雙平衡混頻器設計
2.1 簡介
2.2 射頻混頻器主要特性的定義
2.2.1 轉換增益
2.2.2 隔離度
2.2.3 1dB 增並壓縮點
2.2.4 交互調變
2.2.5 雜訊指數
2.3 主動混波器的原理
2.3.1 單端平衡混頻器
2.3.2 雙平衡混頻器
2.4 X-band GaAs Marchand balun設計與實現
2.4.1 Marchand balun理論分析
2.4.2 Marchand balun實作與量測
2.5 Marchand balun之混頻器設計與實驗
2.6 電路模擬與量測結果
第三章 運用九十度耦合器之K-Band次諧波相位式消除鏡頻混波器設計
3.1 反並聯式配對二極體 ( APDP ) 工作原理
3.2 相位式消除鏡頻訊號工作原理
3.3 K-Band九十度方向耦合器之設計
3.3.1 平行耦合微於線基本原理
3.3.2 新型方向耦合器之設計
3.4 次諧波鏡像消除混頻器的架構設計與製作
參考文獻
圖目錄
圖2.1 1dB抑制點之示意圖
圖2.2 交互調變乘積項之頻譜示意圖
圖2.3 IIP3之示意圖
圖2.4 IIP2之示意圖
圖2.5 雜訊指數示意圖
圖2.6 混頻操作示意圖
圖2.7 混頻頻譜示意圖
圖2.8 單端平衡混頻器混頻示意圖
圖2.9 單端平衡混頻器架構圖
圖2.10 轉導級之架構
圖2.11 LO差動對LO輸出方波信號
圖2.12 雙平衡式混頻器
圖2.13 Balun示意圖
圖2.14 Marchand Balun架構圖
圖2.15 Marchand Balun S11分析
圖2.16 Marchand Balun S21分析
圖2.17 Marchand Balun S31分析
圖2.18 Marchand Balun S22分析
圖2.19 Marchand Balun S33分析
圖2.20 Marchand Balun S23分析
圖2.21 Marchand Balun S32分析
圖2.22 Transformer type Marchand balun
圖2.23 Return Loss ( S11 )
圖2.24 Insertion Loss
圖2.25 Phase difference ( S21-S31 )
圖2.26 Transformer Marchand balun die photo
圖2.27 Gilbert cell mixer架構圖
圖2.28 ( a ) 單平衡混波器 ( b ) current bleed示意圖
圖2.29 S-parameter
圖2.30 Conversion gain vs LO power
圖2.31 Conversion gain vs RF power
圖2.32 Conversion gain vs frequency
圖2.33 Isolation
圖2.34 IM3
圖2.35 X-band混頻器die photo
圖3.1 ( a ) 二極體等效電路 ( b ) I-V特性圖
圖3.2 APDP之電流流向圖
圖3.3 相位式鏡頻拒斥架構圖
圖3.4 混頻器動作原理
圖3.5 耦合微於線架構剖面圖及等效電容網路
圖3.6 耦合微帶線電力線分佈
圖3.7 新型方向耦合器 ( a ) Top view ( b ) Side view
圖3.8 新型方向耦合器之等效電容網路
圖3.9 24GHz耦合器die photo
圖3.10 Return Loss & Isolation
圖3.11 Insertion Loss
圖3.12 Phase difference
圖3.13 次諧波鏡像消除混頻器架構圖
圖3.14 次諧波鏡像消除混頻器die photo
圖3.15 CL & IRM vs LO power
圖3.16 CL & IRM vs IF power
圖3.17 Isolation
圖3.18 Frequency range
圖3.19 IIP3
表目錄
表2.1 Transformet Marchand balun summary
表2.2 Gilbert cell mixer summary
表3.1 Quadrature coupler summary
快3.3 Sub-harmonic image rejection mixer summayr

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