|
[1] 謝煜弘,「電子材料」,新文京開發出版有限公司,2003年。 [2] M.R. Krames, G.E. Höfler, E.I. Chen, I.H. Tan, P. Grillot, N.F. Gardner,H.C. Chui, J.W. Huang, S.A. Stockman, F.A. Kish, and M.G.Craford, Applied physics letters, Vol. 75, pp. 2365, 1999. [3] C.F. Lin, Z.J. Yang, B.H. Chin, J.H. Zheng, J.J. Dai, B.C. Shieh, and C.C. Chang, Journal of The Electrochemical Society, Vol. 153, pp. 1020, 2006. [4] Y.J. Lee, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M.J. Jou, B.J. Lee,T.C. Lu, H.C. Kuo,anc S. C. Wang, Journal of The Electrochemical Society, Vol. 18, pp. 10, 2006. [5] C. Huh, K.S. Lee, E.J. Kang, and S.J. Park, Journal of Applied Physics, Vol. 93, No. 11, pp.9383, 2003.
[6] T. Fujii, Y.Gao, R.Sharma, E.L. Hu, S.P. DenBaars, and S. Nakamura, Applied physics letters, Vol.84, pp. 6, 2004. [7] H. Ono, Y. Ono, K. Kasahara, J. Mizuno, and S. Shoji, Applied Physics Letters, Vol. 47, pp.993, 2008. [8] S.J. Chang, C.F. Shen, W.S. Chen, C.T. Kuo, T.K. Ko, S.C. Shei, and J.K.Sheu, Applied Physics Letters, Vol. 91, pp.013504, 2007. [9] L.J. Guo, Advanced Materials, Vol. 19, pp. 495, 2007. [10] S. Y. Chou, P. R. Krauss, and P. J. Renstrom, Applied Physics Letters, Vol. 67, pp.3114, 1995. [11] P. Fairley, “10 Emerging Technologies That Will Change the World“,MIT Technology Review, Feb 2003. [12]王培良,塑膠微熱壓成形之研究,國立交通大學機械工程研究所碩士論文,1998年。 [13] L.J. Heydrmn, H. Schift, C. David, J. Gobercht, and T. Schweizer, Microelectronic Engineering, Vol. 54, pp. 229, 2000. [14] D. Eisert, W. Braun, S. Kuhn, J. Koeth, and A. Forchel, Microelectronic Engineering,Vol. 46, pp. 179, 2001. [15] S. Zankovych, T. Hoffmann, J. Seekamp, J. -U. Bruch, and C. M. S. Torres Nanotechnology, Vol. 12, pp. 91, 2001. [16] G. M. McClelland, M. W. Hart, C. T. Rettner, M. E. Best, K. R. Carter, and Bruce D. Terris, Applied Physics Letters, Vol. 81, pp. 1483, 2002. [17] K. Pfeiffer, M. Fink, G. Ahrens, G. Gruetzner, F. Reuther, J. Seekamp, S. Zankovych, C.M. S. Torres, I. Maximov, M. Beck, M. Graczyk, L. Montelius,H. Schulz, H. C. Scheer, and F. Steingrueber, Microelectronic Engineering, Vol. 61, pp. 393,2002. [18] Y. Hirai, S. Harada, S. Isaka, M. Kobayashi, and Y. Tanaka, Applied Physics Letters, Vol. 41, pp. 4186, 2002. [19] Y. Hirai, S. Harada, H. Kikuta, Y. Tanaka, M. Okano, S. Isaka and M. Kobayasi, Journal of Vaccuum Science & Technology, pp. 2867, 2002. [20] T.C. Bailey, D.J. Resnick, D. Mancini, K.J. Nordquist, W.J. Dauksher, E.Ainley, A. Talin, K. Gehoski, J.H. Baker, B.J. Choi, S. Johnson, M. Colburn, M. Meissl, S.V. Sreenivasan, J.G. Ekerdt, and C.G. Willson, Microelectronic Engineering,Vol. 61,pp. 461, 2002. [21] W. J. Dauksher, K. J. Nordquist, D. P. Mancini, D. J. Resnick, J. H. Baker, A.E. Hooper, A. A. Talin, T. C. Bailey, A. M. Lemonds, S. V. Sreenivasan, J. G. Ekerdt, and C. G. Willson, Journal of Vaccuum Science & Technology, pp. 2857, 2002. [22] M. Komuro, Y. Tokano, J. Taniguchi, T. Kawasaki, I. Miyamoto, and H. Hiroshima, Applied Physics Letters, Vol. 41, pp. 4182, 2002. [23] T. Bailey, B. J. Choi, M. Colburn, M. Meissl, S. Shaya, J. G. Ekerdt, S. V. Sreenivasan, and C. G. Willson, Journal of Vaccuum Science & Technology, pp. 3572, 2000. [24] M. Beck, M. Graczyk, I. Maximov, E. L. Sarwe, T. G. I. Ling, M. Keil, L. Montelius, Microelectronic Engineering, Vol. 61, pp. 441, 2002. [25] S.Y. Chou, P.R. Krauss, W. Zhang, L. G. Guo, and L. Zhuang, Journal of Vaccuum Science & Technology, Vol. 15, pp. 2897, 1997. [26] S.Y. Chou, P.R. Krauss, Microelectronic Engineering, Vol. 35, pp.237, 1997. [27] S. Y. Chou, C. Keimel, J. Gu, Nature, Vol. 417, pp.835, 2002. [28] P. Ruchhoeft, M. Colburn, B. Choi, H. Nounu, S. Johnson, T. Bailey, S. Damle, M. Stewart, J. Ekerdt, S. V. Sreenivasan, J. C. Wolfe, and C. G. Willson, Journal of Vaccuum Science & Technology, pp. 2965,1999. [29] H.W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, K. M. Leung, T. C. Lu and S. C. Wang, Semiconductor Science and Technology, Vol. 23, pp.045022 ,2008. [30] S. Matsui, Y. Igaku, and H. Ishigaki, Journal of Vaccuum Science & Technology, pp. 19,2001.
|